JPH0355978B2 - - Google Patents

Info

Publication number
JPH0355978B2
JPH0355978B2 JP57111939A JP11193982A JPH0355978B2 JP H0355978 B2 JPH0355978 B2 JP H0355978B2 JP 57111939 A JP57111939 A JP 57111939A JP 11193982 A JP11193982 A JP 11193982A JP H0355978 B2 JPH0355978 B2 JP H0355978B2
Authority
JP
Japan
Prior art keywords
layer
region
semiconductor layer
electron
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57111939A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593977A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57111939A priority Critical patent/JPS593977A/ja
Publication of JPS593977A publication Critical patent/JPS593977A/ja
Publication of JPH0355978B2 publication Critical patent/JPH0355978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57111939A 1982-06-29 1982-06-29 半導体装置 Granted JPS593977A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57111939A JPS593977A (ja) 1982-06-29 1982-06-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111939A JPS593977A (ja) 1982-06-29 1982-06-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS593977A JPS593977A (ja) 1984-01-10
JPH0355978B2 true JPH0355978B2 (enrdf_load_stackoverflow) 1991-08-27

Family

ID=14573923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111939A Granted JPS593977A (ja) 1982-06-29 1982-06-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS593977A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030177A (ja) * 1983-07-28 1985-02-15 Nec Corp 半導体装置
JPH0789584B2 (ja) * 1984-12-19 1995-09-27 日本電気株式会社 半導体装置
JPH0789585B2 (ja) * 1984-12-28 1995-09-27 日本電気株式会社 半導体装置
JPS63134555U (enrdf_load_stackoverflow) * 1987-02-24 1988-09-02
JP3019862B2 (ja) * 1989-03-14 2000-03-13 松下電子工業株式会社 電界効果トランジスタ
JP4755922B2 (ja) * 2006-02-27 2011-08-24 日野自動車株式会社 ドア構造

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551122A (en) * 1978-06-16 1980-01-07 Mitsubishi Electric Corp Field-effect transistor
JPS5953714B2 (ja) * 1979-12-28 1984-12-26 富士通株式会社 半導体装置
JPS6312392A (ja) * 1986-07-02 1988-01-19 Matsushita Electric Ind Co Ltd 濾過器

Also Published As

Publication number Publication date
JPS593977A (ja) 1984-01-10

Similar Documents

Publication Publication Date Title
KR890003379B1 (ko) 화합물 반도체 집적회로장치
JPH0435904B2 (enrdf_load_stackoverflow)
KR900000208B1 (ko) N-채널 및 p-채널 트랜지스터들을 포함하는 반도체장치 및 그의 제조방법
KR920003799B1 (ko) 반도체 장치
JPH0324782B2 (enrdf_load_stackoverflow)
JP2689057B2 (ja) 静電誘導型半導体装置
JPH0355978B2 (enrdf_load_stackoverflow)
JPS6086872A (ja) 半導体装置
JPS59100577A (ja) 半導体装置
US5107314A (en) Gallium antimonide field-effect transistor
JPS61147577A (ja) 相補型半導体装置
JPH07273311A (ja) 帯域対帯域共振トンネリング・トランジスタ
JPH0468775B2 (enrdf_load_stackoverflow)
JPH0371774B2 (enrdf_load_stackoverflow)
JPH07142508A (ja) 電界効果型素子とその製造方法
KR910006698B1 (ko) 반도체 장치
JP3054216B2 (ja) 半導体装置
GB2239557A (en) High electron mobility transistors
JP2708492B2 (ja) 半導体装置の製造方法
JP2655594B2 (ja) 集積型半導体装置
JP2834172B2 (ja) 電界効果トランジスタ
JPS62209864A (ja) 半導体装置
JPH0797633B2 (ja) 電界効果トランジスタ
JPH0210747A (ja) 半導体集積装置及びその製造方法
JPH0327537A (ja) 変調ドープ型電界効果トランジスタ