JPH0354860B2 - - Google Patents
Info
- Publication number
- JPH0354860B2 JPH0354860B2 JP18989384A JP18989384A JPH0354860B2 JP H0354860 B2 JPH0354860 B2 JP H0354860B2 JP 18989384 A JP18989384 A JP 18989384A JP 18989384 A JP18989384 A JP 18989384A JP H0354860 B2 JPH0354860 B2 JP H0354860B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide glass
- forming
- groove
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 56
- 239000000075 oxide glass Substances 0.000 claims description 53
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 52
- 238000005530 etching Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18989384A JPS6167934A (ja) | 1984-09-11 | 1984-09-11 | 溝埋込分離の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18989384A JPS6167934A (ja) | 1984-09-11 | 1984-09-11 | 溝埋込分離の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6167934A JPS6167934A (ja) | 1986-04-08 |
| JPH0354860B2 true JPH0354860B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-08-21 |
Family
ID=16248944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18989384A Granted JPS6167934A (ja) | 1984-09-11 | 1984-09-11 | 溝埋込分離の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6167934A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6246543A (ja) * | 1985-08-23 | 1987-02-28 | Nec Corp | 半導体装置の製造方法 |
-
1984
- 1984-09-11 JP JP18989384A patent/JPS6167934A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6167934A (ja) | 1986-04-08 |