JPH0354852B2 - - Google Patents

Info

Publication number
JPH0354852B2
JPH0354852B2 JP60000432A JP43285A JPH0354852B2 JP H0354852 B2 JPH0354852 B2 JP H0354852B2 JP 60000432 A JP60000432 A JP 60000432A JP 43285 A JP43285 A JP 43285A JP H0354852 B2 JPH0354852 B2 JP H0354852B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
thickness
gate
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60000432A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61160978A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60000432A priority Critical patent/JPS61160978A/ja
Publication of JPS61160978A publication Critical patent/JPS61160978A/ja
Publication of JPH0354852B2 publication Critical patent/JPH0354852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60000432A 1985-01-08 1985-01-08 半導体装置 Granted JPS61160978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60000432A JPS61160978A (ja) 1985-01-08 1985-01-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60000432A JPS61160978A (ja) 1985-01-08 1985-01-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS61160978A JPS61160978A (ja) 1986-07-21
JPH0354852B2 true JPH0354852B2 (enrdf_load_stackoverflow) 1991-08-21

Family

ID=11473650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60000432A Granted JPS61160978A (ja) 1985-01-08 1985-01-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS61160978A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0416198A1 (en) * 1989-08-30 1991-03-13 International Business Machines Corporation Electron wave deflection in modulation doped and other doped semiconductor structures
EP0469768A1 (en) * 1990-07-31 1992-02-05 AT&T Corp. A substantially linear field effect transistor and method of making same
US8907350B2 (en) * 2010-04-28 2014-12-09 Cree, Inc. Semiconductor devices having improved adhesion and methods of fabricating the same
CN111081763B (zh) * 2019-12-25 2021-09-14 大连理工大学 一种场板下方具有蜂窝凹槽势垒层结构的常关型hemt器件及其制备方法

Also Published As

Publication number Publication date
JPS61160978A (ja) 1986-07-21

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