JPH0354465B2 - - Google Patents
Info
- Publication number
- JPH0354465B2 JPH0354465B2 JP19340582A JP19340582A JPH0354465B2 JP H0354465 B2 JPH0354465 B2 JP H0354465B2 JP 19340582 A JP19340582 A JP 19340582A JP 19340582 A JP19340582 A JP 19340582A JP H0354465 B2 JPH0354465 B2 JP H0354465B2
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- layer
- substrate
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 13
- 229910005542 GaSb Inorganic materials 0.000 claims description 10
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000002772 conduction electron Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 150000002738 metalloids Chemical class 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 bismuth (Bi) Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19340582A JPS5984475A (ja) | 1982-11-05 | 1982-11-05 | 電界効果型トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19340582A JPS5984475A (ja) | 1982-11-05 | 1982-11-05 | 電界効果型トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984475A JPS5984475A (ja) | 1984-05-16 |
| JPH0354465B2 true JPH0354465B2 (de) | 1991-08-20 |
Family
ID=16307402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19340582A Granted JPS5984475A (ja) | 1982-11-05 | 1982-11-05 | 電界効果型トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984475A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6127681A (ja) * | 1984-07-17 | 1986-02-07 | Res Dev Corp Of Japan | 超格子構造のチヤネル部をもつ電界効果トランジスタ |
| JPS62194677A (ja) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | 半導体装置 |
| JPS62209864A (ja) * | 1986-03-11 | 1987-09-16 | Fujitsu Ltd | 半導体装置 |
| JPH07193234A (ja) * | 1993-12-27 | 1995-07-28 | Nec Corp | 半導体装置およびその製造方法 |
| US20170358658A1 (en) * | 2014-09-26 | 2017-12-14 | Intel Corporation | Metal oxide metal field effect transistors (momfets) |
-
1982
- 1982-11-05 JP JP19340582A patent/JPS5984475A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5984475A (ja) | 1984-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6327065A (ja) | ヘテロ接合二重チャネル半導体装置、この半導体装置を応用した電界効果トランジスタ、ならびにこの半導体装置を応用した負のコンダクタンスをもつ装置 | |
| US4538165A (en) | FET With heterojunction induced channel | |
| US4704622A (en) | Negative transconductance device | |
| JPH05110086A (ja) | トンネルトランジスタ | |
| US4688061A (en) | Mobility-modulation field-effect transistor | |
| JPS6342864B2 (de) | ||
| Mimura | High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices | |
| US4600932A (en) | Enhanced mobility buried channel transistor structure | |
| JPH084138B2 (ja) | 半導体装置 | |
| JPH0354465B2 (de) | ||
| JPH0312769B2 (de) | ||
| JPS61241968A (ja) | 半導体記憶装置 | |
| JPS61156773A (ja) | ヘテロ接合半導体デバイス | |
| Das et al. | Effect of noise and temperature on the performance of ferro-tunnel FET | |
| KR100199024B1 (ko) | 두개의 비대칭 양자점을 갖는 평면 공명관통 트랜지스터 | |
| JPS61144881A (ja) | 半導体装置 | |
| JPH025438A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| JPH0352227B2 (de) | ||
| JP2655594B2 (ja) | 集積型半導体装置 | |
| JPH0620142B2 (ja) | 半導体装置 | |
| Li et al. | n-Channel AlSbGaSb modulation-doped field-effect transistors | |
| JPS6244698B2 (de) | ||
| EP0366861A1 (de) | Ballistischer Halbleitertransistor | |
| JPS62209864A (ja) | 半導体装置 | |
| JPH0219623B2 (de) |