JPH035056B2 - - Google Patents
Info
- Publication number
- JPH035056B2 JPH035056B2 JP3861487A JP3861487A JPH035056B2 JP H035056 B2 JPH035056 B2 JP H035056B2 JP 3861487 A JP3861487 A JP 3861487A JP 3861487 A JP3861487 A JP 3861487A JP H035056 B2 JPH035056 B2 JP H035056B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor
- film
- electron beam
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000013078 crystal Substances 0.000 claims description 35
- 238000010894 electron beam technology Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010408 film Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 7
- 229910004261 CaF 2 Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- OKOSPWNNXVDXKZ-UHFFFAOYSA-N but-3-enoyl chloride Chemical compound ClC(=O)CC=C OKOSPWNNXVDXKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- BOTHRHRVFIZTGG-UHFFFAOYSA-K praseodymium(3+);trifluoride Chemical compound F[Pr](F)F BOTHRHRVFIZTGG-UHFFFAOYSA-K 0.000 description 1
- 238000000348 solid-phase epitaxy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- HPNURIVGONRLQI-UHFFFAOYSA-K trifluoroeuropium Chemical compound F[Eu](F)F HPNURIVGONRLQI-UHFFFAOYSA-K 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- XRADHEAKQRNYQQ-UHFFFAOYSA-K trifluoroneodymium Chemical compound F[Nd](F)F XRADHEAKQRNYQQ-UHFFFAOYSA-K 0.000 description 1
- AATUHDXSJTXIHB-UHFFFAOYSA-K trifluorothulium Chemical compound F[Tm](F)F AATUHDXSJTXIHB-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3861487A JPS63232311A (ja) | 1987-02-20 | 1987-02-20 | 半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3861487A JPS63232311A (ja) | 1987-02-20 | 1987-02-20 | 半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63232311A JPS63232311A (ja) | 1988-09-28 |
| JPH035056B2 true JPH035056B2 (esLanguage) | 1991-01-24 |
Family
ID=12530130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3861487A Granted JPS63232311A (ja) | 1987-02-20 | 1987-02-20 | 半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63232311A (esLanguage) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998010430A1 (en) | 1996-09-04 | 1998-03-12 | Toyo Ink Manufacturing Co., Ltd. | Electron beam irradiating method and object to be irradiated with electron beam |
| JP3772272B2 (ja) * | 2004-02-13 | 2006-05-10 | 独立行政法人科学技術振興機構 | Ｉ−ｖｉｉ族半導体単結晶薄膜およびその製造方法 |
-
1987
- 1987-02-20 JP JP3861487A patent/JPS63232311A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63232311A (ja) | 1988-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69412579T2 (de) | Struktur, die eine dünne Schicht aus einem ferroelektrischen Kristall enthält, Verfahren zur Herstellung und diese Struktur verwendende Vorrichtung | |
| DE69422229T2 (de) | Verfahren zum Herstellen einer Halbleiterdünnschicht und Verfahren zur Herstellung einer Hall-Effekt-Anordnung | |
| US5219769A (en) | Method for forming Schottky diode | |
| JPH0360171B2 (esLanguage) | ||
| EP0093981A1 (en) | Method of producing a single-crystal silicon film | |
| JPH02260524A (ja) | 結晶性半導体膜及びその形成方法 | |
| JPH035056B2 (esLanguage) | ||
| JP3366169B2 (ja) | 多結晶シリコン薄膜積層体、シリコン薄膜太陽電池および薄膜トランジスタ | |
| US6057213A (en) | Methods of forming polycrystalline semiconductor layers | |
| JPH0476217B2 (esLanguage) | ||
| JP2800060B2 (ja) | 半導体膜の製造方法 | |
| JP2936878B2 (ja) | 半導体ショットキー接合の作製方法 | |
| JPS6185815A (ja) | 多結晶シリコン膜の形成方法 | |
| JPH0697401A (ja) | 半導体装置およびその製造方法 | |
| JP2737152B2 (ja) | Ｓｏｉ形成方法 | |
| JPS60246619A (ja) | 半導体装置の製造方法 | |
| JPS59128292A (ja) | 薄膜の結晶化方法 | |
| JPH01149483A (ja) | 太陽電池 | |
| JPH08139015A (ja) | ゲルマニウム薄膜成長法 | |
| JPS5853823A (ja) | 半導体装置の製造方法 | |
| KALITZOVA | Amorphous to Crystalline State Conversion | |
| JPS63151013A (ja) | Ｓｏｉ基板の製造方法 | |
| JP2771635B2 (ja) | Ｃａ▲下１▼―▲下ｘ▼Ｓｒ▲下ｘ▼Ｆ▲下２▼膜の形成方法 | |
| JP2699608B2 (ja) | 単結晶薄膜形成方法 | |
| JP2680114B2 (ja) | 結晶性半導体薄膜の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |