JPH0350327U - - Google Patents
Info
- Publication number
- JPH0350327U JPH0350327U JP10906289U JP10906289U JPH0350327U JP H0350327 U JPH0350327 U JP H0350327U JP 10906289 U JP10906289 U JP 10906289U JP 10906289 U JP10906289 U JP 10906289U JP H0350327 U JPH0350327 U JP H0350327U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- cooled
- sample stand
- lowering
- raising
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009434 installation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は、本考案の一実施例のプラズマエツチ
ング装置の構成図である。 １……ウエハ、２……ガスボンベ、５……電極
、６……低温冷媒循環機、９……ウエハ押上げ部
材、１０……エアシリンダ、１１……バネ、１２
……エツチング室。
ング装置の構成図である。 １……ウエハ、２……ガスボンベ、５……電極
、６……低温冷媒循環機、９……ウエハ押上げ部
材、１０……エアシリンダ、１１……バネ、１２
……エツチング室。
Claims (1)
- 室温以下の低温に冷却される試料台の試料設置
面に対して試料を昇降させる部材を伝熱ガスを介
し前記試料台により冷却するようにしたことを特
徴とする真空処理装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10906289U JPH0350327U (ja) | 1989-09-20 | 1989-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10906289U JPH0350327U (ja) | 1989-09-20 | 1989-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0350327U true JPH0350327U (ja) | 1991-05-16 |
Family
ID=31657665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10906289U Pending JPH0350327U (ja) | 1989-09-20 | 1989-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0350327U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010021405A (ja) * | 2008-07-11 | 2010-01-28 | Hitachi High-Technologies Corp | プラズマ処理装置 |
-
1989
- 1989-09-20 JP JP10906289U patent/JPH0350327U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010021405A (ja) * | 2008-07-11 | 2010-01-28 | Hitachi High-Technologies Corp | プラズマ処理装置 |