JPH0348652B2 - - Google Patents
Info
- Publication number
- JPH0348652B2 JPH0348652B2 JP58050396A JP5039683A JPH0348652B2 JP H0348652 B2 JPH0348652 B2 JP H0348652B2 JP 58050396 A JP58050396 A JP 58050396A JP 5039683 A JP5039683 A JP 5039683A JP H0348652 B2 JPH0348652 B2 JP H0348652B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- emitter
- base
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58050396A JPS59193059A (ja) | 1983-03-28 | 1983-03-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58050396A JPS59193059A (ja) | 1983-03-28 | 1983-03-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59193059A JPS59193059A (ja) | 1984-11-01 |
JPH0348652B2 true JPH0348652B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-07-25 |
Family
ID=12857711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58050396A Granted JPS59193059A (ja) | 1983-03-28 | 1983-03-28 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59193059A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7290403B2 (ja) * | 2018-08-07 | 2023-06-13 | 日東電工株式会社 | 複合体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155778A (en) * | 1978-05-30 | 1979-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS6028146B2 (ja) * | 1979-12-12 | 1985-07-03 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPS57188871A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Manufacture of semiconductor device |
-
1983
- 1983-03-28 JP JP58050396A patent/JPS59193059A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59193059A (ja) | 1984-11-01 |