JPH0344148B2 - - Google Patents
Info
- Publication number
- JPH0344148B2 JPH0344148B2 JP58175684A JP17568483A JPH0344148B2 JP H0344148 B2 JPH0344148 B2 JP H0344148B2 JP 58175684 A JP58175684 A JP 58175684A JP 17568483 A JP17568483 A JP 17568483A JP H0344148 B2 JPH0344148 B2 JP H0344148B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- reaction chamber
- silicon
- film
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17568483A JPS6067673A (ja) | 1983-09-22 | 1983-09-22 | プラズマ気相反応方法 |
JP33905390A JPH03183125A (ja) | 1983-09-22 | 1990-11-30 | プラズマ気相反応方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17568483A JPS6067673A (ja) | 1983-09-22 | 1983-09-22 | プラズマ気相反応方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33905390A Division JPH03183125A (ja) | 1983-09-22 | 1990-11-30 | プラズマ気相反応方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6067673A JPS6067673A (ja) | 1985-04-18 |
JPH0344148B2 true JPH0344148B2 (enrdf_load_stackoverflow) | 1991-07-05 |
Family
ID=16000425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17568483A Granted JPS6067673A (ja) | 1983-09-22 | 1983-09-22 | プラズマ気相反応方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6067673A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62280368A (ja) * | 1986-05-30 | 1987-12-05 | Semiconductor Energy Lab Co Ltd | 薄膜作製装置 |
US7421258B2 (en) * | 2003-10-10 | 2008-09-02 | Rosemount Inc. | Compact temperature transmitter with improved lead connections |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54125143A (en) * | 1978-03-24 | 1979-09-28 | Toshiba Corp | Treating device using hydrogen fluoride-containing gas |
JPS5559727A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Plasma deposition device |
JPS5644763A (en) * | 1979-09-20 | 1981-04-24 | Toshiba Corp | Cvd device under reduced pressure |
JPS56166935A (en) * | 1980-05-23 | 1981-12-22 | Mitsubishi Electric Corp | Apparatus for vapor growth under reduced pressure |
JPS5825226A (ja) * | 1982-07-19 | 1983-02-15 | Shunpei Yamazaki | プラズマ気相反応装置 |
JPS5895550A (ja) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | 非単結晶半導体層形成用装置 |
-
1983
- 1983-09-22 JP JP17568483A patent/JPS6067673A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6067673A (ja) | 1985-04-18 |