JPS6067673A - プラズマ気相反応方法 - Google Patents

プラズマ気相反応方法

Info

Publication number
JPS6067673A
JPS6067673A JP17568483A JP17568483A JPS6067673A JP S6067673 A JPS6067673 A JP S6067673A JP 17568483 A JP17568483 A JP 17568483A JP 17568483 A JP17568483 A JP 17568483A JP S6067673 A JPS6067673 A JP S6067673A
Authority
JP
Japan
Prior art keywords
reaction chamber
reaction
plasma
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17568483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0344148B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP17568483A priority Critical patent/JPS6067673A/ja
Publication of JPS6067673A publication Critical patent/JPS6067673A/ja
Priority to JP33905390A priority patent/JPH03183125A/ja
Publication of JPH0344148B2 publication Critical patent/JPH0344148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP17568483A 1983-09-22 1983-09-22 プラズマ気相反応方法 Granted JPS6067673A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP17568483A JPS6067673A (ja) 1983-09-22 1983-09-22 プラズマ気相反応方法
JP33905390A JPH03183125A (ja) 1983-09-22 1990-11-30 プラズマ気相反応方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17568483A JPS6067673A (ja) 1983-09-22 1983-09-22 プラズマ気相反応方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP33905390A Division JPH03183125A (ja) 1983-09-22 1990-11-30 プラズマ気相反応方法

Publications (2)

Publication Number Publication Date
JPS6067673A true JPS6067673A (ja) 1985-04-18
JPH0344148B2 JPH0344148B2 (enrdf_load_stackoverflow) 1991-07-05

Family

ID=16000425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17568483A Granted JPS6067673A (ja) 1983-09-22 1983-09-22 プラズマ気相反応方法

Country Status (1)

Country Link
JP (1) JPS6067673A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62280368A (ja) * 1986-05-30 1987-12-05 Semiconductor Energy Lab Co Ltd 薄膜作製装置
JP2005122734A (ja) * 2003-10-10 2005-05-12 Rosemount Inc 改良されたリード線接続を有するコンパクトプロセス送信機

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125143A (en) * 1978-03-24 1979-09-28 Toshiba Corp Treating device using hydrogen fluoride-containing gas
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device
JPS5644763A (en) * 1979-09-20 1981-04-24 Toshiba Corp Cvd device under reduced pressure
JPS56166935A (en) * 1980-05-23 1981-12-22 Mitsubishi Electric Corp Apparatus for vapor growth under reduced pressure
JPS5825226A (ja) * 1982-07-19 1983-02-15 Shunpei Yamazaki プラズマ気相反応装置
JPS5895550A (ja) * 1982-11-01 1983-06-07 Shunpei Yamazaki 非単結晶半導体層形成用装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125143A (en) * 1978-03-24 1979-09-28 Toshiba Corp Treating device using hydrogen fluoride-containing gas
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device
JPS5644763A (en) * 1979-09-20 1981-04-24 Toshiba Corp Cvd device under reduced pressure
JPS56166935A (en) * 1980-05-23 1981-12-22 Mitsubishi Electric Corp Apparatus for vapor growth under reduced pressure
JPS5825226A (ja) * 1982-07-19 1983-02-15 Shunpei Yamazaki プラズマ気相反応装置
JPS5895550A (ja) * 1982-11-01 1983-06-07 Shunpei Yamazaki 非単結晶半導体層形成用装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62280368A (ja) * 1986-05-30 1987-12-05 Semiconductor Energy Lab Co Ltd 薄膜作製装置
JP2005122734A (ja) * 2003-10-10 2005-05-12 Rosemount Inc 改良されたリード線接続を有するコンパクトプロセス送信機

Also Published As

Publication number Publication date
JPH0344148B2 (enrdf_load_stackoverflow) 1991-07-05

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