JPH0343777B2 - - Google Patents

Info

Publication number
JPH0343777B2
JPH0343777B2 JP59077023A JP7702384A JPH0343777B2 JP H0343777 B2 JPH0343777 B2 JP H0343777B2 JP 59077023 A JP59077023 A JP 59077023A JP 7702384 A JP7702384 A JP 7702384A JP H0343777 B2 JPH0343777 B2 JP H0343777B2
Authority
JP
Japan
Prior art keywords
film
resist
etched
etching
mixed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59077023A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60219748A (ja
Inventor
Kazuhiro Tanaka
Yaichiro Watakabe
Yoshiki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7702384A priority Critical patent/JPS60219748A/ja
Publication of JPS60219748A publication Critical patent/JPS60219748A/ja
Publication of JPH0343777B2 publication Critical patent/JPH0343777B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP7702384A 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法 Granted JPS60219748A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7702384A JPS60219748A (ja) 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7702384A JPS60219748A (ja) 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS60219748A JPS60219748A (ja) 1985-11-02
JPH0343777B2 true JPH0343777B2 (enrdf_load_stackoverflow) 1991-07-03

Family

ID=13622153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7702384A Granted JPS60219748A (ja) 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60219748A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214575A (ja) * 1999-01-26 2000-08-04 Sharp Corp クロムマスクの形成方法
US6391790B1 (en) 2000-05-22 2002-05-21 Applied Materials, Inc. Method and apparatus for etching photomasks
US7115523B2 (en) 2000-05-22 2006-10-03 Applied Materials, Inc. Method and apparatus for etching photomasks
EP1290495A2 (en) * 2000-06-15 2003-03-12 Applied Materials, Inc. A method and apparatus for etching metal layers on substrates
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
WO2003021659A1 (en) 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US6960413B2 (en) 2003-03-21 2005-11-01 Applied Materials, Inc. Multi-step process for etching photomasks
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144541A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Etching method
JPS60148123A (ja) * 1983-12-30 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 乾式エツチング方法

Also Published As

Publication number Publication date
JPS60219748A (ja) 1985-11-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term