JPH0343777B2 - - Google Patents
Info
- Publication number
- JPH0343777B2 JPH0343777B2 JP59077023A JP7702384A JPH0343777B2 JP H0343777 B2 JPH0343777 B2 JP H0343777B2 JP 59077023 A JP59077023 A JP 59077023A JP 7702384 A JP7702384 A JP 7702384A JP H0343777 B2 JPH0343777 B2 JP H0343777B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- etched
- etching
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011651 chromium Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 20
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000000460 chlorine Substances 0.000 claims description 15
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 11
- 150000008282 halocarbons Chemical class 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 7
- -1 chlorine halocarbon Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体集積回路装置（IC）などの半
導体基板またはフオトマスク用基板の主面上に形
成された金属膜などの被エツチング膜のパターン
をドライエツチングによつて形成する方法に関す
るものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention is a method for drying a pattern of a film to be etched such as a metal film formed on the main surface of a semiconductor substrate such as a semiconductor integrated circuit device (IC) or a photomask substrate. This relates to a method of forming by etching.
ICなどの半導体装置やフオトマスクを製造す
る際に、これらの基板の主面上に形成された金属
膜などの被エツチング膜の微細パターンを形成す
るためには、写真製版技術は不可欠である。最
近、電子ビーム露光装置またはＸ線露光装置とリ
アクテイブイオンエツチング（RIE）装置などの
ドライエツチング装置とを用いる写真製版技術が
研究され実用化されている。
When manufacturing semiconductor devices such as ICs and photomasks, photolithography technology is indispensable for forming fine patterns of etched films such as metal films formed on the main surfaces of these substrates. Recently, photoengraving techniques using an electron beam exposure device or an X-ray exposure device and a dry etching device such as a reactive ion etching (RIE) device have been researched and put into practical use.
以下、フオトマスクを製造する方法を例にとり
説明する。 Hereinafter, a method for manufacturing a photomask will be explained as an example.
第１図Ａ〜Ｅはフオトマスクの従来の製造方法
の一例の主要段階における状態を示す断面図であ
る。 FIGS. 1A to 1E are cross-sectional views showing the main stages of an example of a conventional method for manufacturing a photomask.
まず、第１図Ａに示すように、ガラス基板１の
主面上に蒸着装置を用いて600Å程度の膜厚を有
する金属クロム（Cr）膜２を形成し、このCr膜
２の表面上にスピンナーなどの塗布装置を用いて
4000Å程度の膜厚を有する電子ビーム用のレジス
トOEBR−100（東京応化社商品名）膜３を形成
し、しかるのち170℃程度の温度で約20分間のベ
ーキングを行う。 First, as shown in FIG. 1A, a metal chromium (Cr) film 2 having a thickness of about 600 Å is formed on the main surface of a glass substrate 1 using a vapor deposition apparatus. Using a coating device such as a spinner
An electron beam resist OEBR-100 (trade name, Tokyo Ohka Co., Ltd.) film 3 having a film thickness of about 4000 Å is formed, and then baked at a temperature of about 170° C. for about 20 minutes.
次に、第１図Ｂに示すように、Cr膜２の所定
パターンに形成される部分に対応するレジスト
OEBR−100膜３の部分に電子ビーム露光装置を
用いて図示矢印の方向から５×10-6クーロンＣ／
cm2程度のドーズ量の電子ビームを照射する。 Next, as shown in FIG.
Using an electron beam exposure device, the OEBR-100 film 3 was exposed to 5×10 -6 coulombs C/
An electron beam is irradiated with a dose of about cm 2 .
次に、第１図Ｃに示すように、メチルエチルケ
トン（MEK）６量に対してエタノール１量の割
合で混合した現像液を用いてレジストOEBR−
100膜３の電子ビームが照射されていない部分を
除去してCr膜２の表面上に上記所定パターンを
有するレジストOEBR−100膜３ａを残す。次い
で、レジストOEBR−100膜３ａをリンスし乾燥
する。 Next, as shown in FIG. 1C, a resist OEBR-
The portions of the OEBR-100 film 3 that are not irradiated with the electron beam are removed to leave the resist OEBR-100 film 3a having the above-mentioned predetermined pattern on the surface of the Cr film 2. Next, the resist OEBR-100 film 3a is rinsed and dried.
次に、第１図Ｄに示すように、レジストOEBR
−100膜３ａをマスクとして、Cr膜２にRIE装置
などのドライエツチング装置を用いて酸素（O2）
と四塩化炭素（CCl4）との混合ガスのプラズマ
によるエツチングを施してレジストOEBR−100
膜３ａの下に上記所定パターンを有するCr膜２
ａを形成する。このとき、O2およびCCl4の混合
ガスの圧力は0.2Torr程度に設定されており、ガ
ラス基板１の温度は20℃程度に設定されている。 Next, as shown in Figure 1D, resist OEBR
Using the −100 film 3a as a mask, the Cr film 2 is etched with oxygen (O 2 ) using a dry etching device such as an RIE device.
Resist OEBR-100 was etched by plasma of a mixed gas of carbon tetrachloride (CCl 4 ) and carbon tetrachloride (CCl 4 ).
Cr film 2 having the above-mentioned predetermined pattern under the film 3a
form a. At this time, the pressure of the mixed gas of O 2 and CCl 4 is set to about 0.2 Torr, and the temperature of the glass substrate 1 is set to about 20°C.
このO2およびCCl4の混合ガスのプラズマによ
るCr膜２へのエツチングの機構は、この混合ガ
スのプラズマ中に生成する酸素ラジカル（O*）
および塩素ラジカル（Cl*）とCr膜２との間に、
下記反応式が生ずることによるものと考えられて
いる。 The etching mechanism of the Cr film 2 by the plasma of this mixed gas of O 2 and CCl 4 is due to oxygen radicals (O * ) generated in the plasma of this mixed gas.
and between chlorine radicals (Cl * ) and Cr film 2,
It is thought that this is due to the following reaction formula occurring.
Cr＋２・O*＋２・Cl*→CrO2Cl2↑
このO2およびCCl4の混合ガスのプラズマによ
るCr膜２へのエツチング速度は、O2とCCl4との
混合比（体積比）が19（O2）：５（CCl4）であると
きに最大になり、ガラス基板１すなわちCr膜２
の温度が20℃である場合には30Å／min.程度で
ある。従つて、600Å程度の膜厚を有するCr膜２
をエツチングするに必要な時間は約20分である。
最後に、第１図Ｅに示すように、レジストOEBR
−100膜３ａを除去すると、ガラス基板１の主面
上に上記所定パターンを有するCr膜２ａが形成
されたこの従来例の方法になるフオトマスクが得
られる。Cr+2・O * +2・Cl * →CrO 2 Cl 2 ↑ The etching rate of the Cr film 2 by the plasma of this mixed gas of O 2 and CCl 4 is as follows: The mixing ratio (volume ratio) of O 2 and CCl 4 is 19 It is maximum when (O 2 ):5 (CCl 4 ), and the glass substrate 1, that is, the Cr film 2
When the temperature is 20°C, it is about 30 Å/min. Therefore, the Cr film 2 having a thickness of about 600 Å
The time required for etching is approximately 20 minutes.
Finally, as shown in Figure 1E, resist OEBR
When the -100 film 3a is removed, a photomask according to this conventional method is obtained in which the Cr film 2a having the above-mentioned predetermined pattern is formed on the main surface of the glass substrate 1.
ところで、この従来例の方法では、レジスト
OEBR−100膜３ａがO2およびCCl4の混合ガスの
プラズマに対する耐性が悪いので、レジスト
OEBR−100膜３ａの膜べりが大きく、微細パタ
ーンのCr膜２ａを精度よく形成することが容易
ではないという欠点があつた。また、Cr膜２へ
のエツチング時間が約20分であるので、バツチ処
理が容易なウエツトエツチングに比べて生産性が
悪いという欠点もあつた。 By the way, in this conventional method, the resist
Since the OEBR-100 film 3a has poor resistance to plasma of mixed gas of O 2 and CCl 4 , resist
There was a drawback that the OEBR-100 film 3a had a large film shrinkage, and it was not easy to accurately form the Cr film 2a with a fine pattern. Furthermore, since the etching time for the Cr film 2 is about 20 minutes, there is also a drawback that productivity is lower than that of wet etching, which is easier to perform batch processing.
この発明は、上述の欠点を除去する目的でなさ
れたもので、基板の主面上に形成され酸素ラジカ
ルおよび塩素ラジカルとの反応によつてエツチン
グ可能な材料からなる被エツチング膜の所定パタ
ーンの部分の表面上にレジスト膜を形成し、この
レジスト膜をマスクとして被エツチング膜に酸素
および四塩化炭素の混合ガスに四フツ化炭素を添
加し、かつその混合比率を19：５：３の体積比と
することによつて、微細パターンの被エツチング
膜を精度よく形成することができ、しかも生産性
のよいドライエツチングによるパターンの形成方
法を提供するものである。
This invention has been made with the aim of eliminating the above-mentioned drawbacks, and is intended to remove a predetermined pattern of a film formed on the main surface of a substrate and made of a material that can be etched by reaction with oxygen radicals and chlorine radicals. A resist film is formed on the surface of the film, and using this resist film as a mask, carbon tetrafluoride is added to a mixed gas of oxygen and carbon tetrachloride, and the volume ratio of the mixture is 19:5:3. By doing so, it is possible to form a film to be etched with a fine pattern with high precision, and to provide a method of forming a pattern by dry etching with good productivity.
第２図Ａ〜Ｅはフオトマスクの製造に適用した
この発明の一実施例の主要段階における状態を示
す断面図である。
FIGS. 2A to 2E are cross-sectional views showing the main stages of an embodiment of the present invention applied to the manufacture of photomasks.
図において、第１図に示した符号と同一符号は
同等部分を示す。 In the figure, the same symbols as those shown in FIG. 1 indicate equivalent parts.
まず、第２図Ａに示すように、従来例の第１図
Ａに示した段階と同様に、ガラス基板１の主面上
にこの実施例での被エツチング膜であるCr膜２
およびこの実施例でのレジスト膜であるレジスト
OEBR−100膜３を順次形成したのちに、ベーキ
ンクを行う。 First, as shown in FIG. 2A, similar to the stage shown in FIG. 1A of the conventional example, a Cr film 2, which is the film to be etched in this embodiment, is deposited on the main surface of the glass substrate 1.
and resist, which is the resist film in this example.
After sequentially forming the OEBR-100 film 3, baking is performed.
次に、第２図Ｂに示すように、従来例の第１図
Ｂに示した段階と同様に、Cr膜２の所定パター
ンに形成される部分に対応するレジストOEBR−
100膜３の部分に図示矢印の方向から５×
10-6C／cm2程度のドーズ量の電子ビームを照射す
る。 Next, as shown in FIG. 2B, similar to the step shown in FIG. 1B of the conventional example, a resist OEBR-
100 Membrane 3 part 5x from the direction of the arrow shown in the diagram
An electron beam with a dose of about 10 -6 C/cm 2 is irradiated.
次に、第２図Ｃに示すように、従来例の第１図
Ｃに示した段階と同様に、MEK6量に対してエタ
ノール１量の割合で混合した現像液を用いてレジ
ストOEBR−100膜３の電子ビームが照射されて
いない部分を除去してCr膜２の表面上に上記所
定パターンを有するレジストOEBR−100膜３ａ
を残す。次いで、レジストOEBR−100膜３ａを
リンスし乾燥する。 Next, as shown in Fig. 2C, the resist OEBR-100 film was developed using a developer containing 6 parts of MEK and 1 part of ethanol, similar to the step shown in Fig. 1C of the conventional example. A resist OEBR-100 film 3a having the above-mentioned predetermined pattern on the surface of the Cr film 2 by removing the portion not irradiated with the electron beam in step 3
leave. Next, the resist OEBR-100 film 3a is rinsed and dried.
次に、第２図Ｄに示すように、レジストOEBR
−100膜３ａをマスクとして、O2、この実施例で
の有機塩素系ハロカーボンであるCCl4およびこ
の実施例での有機フツ素系ハロカーボンである四
フツ化炭素（CF4）を体積比19（O2）：５（CCl4）：
３（CF4）で混合した混合ガスのプラズマによる
エツチングをCr膜２に施してレジストOEBR−
100膜３ａの下に上記所定パターンを有するCr膜
２ａを形成する。このとき、このO2、CCl4およ
びCF4の混合ガスの圧力は0.2Torr程度に設定さ
れており、ガラス基板１の温度は20℃程度に設定
されている。 Next, as shown in Figure 2D, resist OEBR
Using the −100 film 3a as a mask, O 2 , CCl 4 , which is an organic chlorine halocarbon in this example, and carbon tetrafluoride (CF 4 ), which is an organic fluorine halocarbon in this example, were added in volume ratios. 19( O2 ):5( CCl4 ):
3 (CF 4 ) mixed gas plasma etching is applied to the Cr film 2 to form a resist OEBR-
A Cr film 2a having the above-mentioned predetermined pattern is formed under the 100% film 3a. At this time, the pressure of the mixed gas of O 2 , CCl 4 and CF 4 is set to about 0.2 Torr, and the temperature of the glass substrate 1 is set to about 20°C.
このようなO2、CCl4およびCF4の体積比19：
５：３の混合ガスのプラズマによるCr膜２への
エツチング速度は、従来例におけるO2および
CCl4の体積比19：５の混合ガスのプラズマによ
るエツチング速度より大きいことが発明者らの研
究によつて判明した。 The volume ratio of O2 , CCl4 and CF4 is 19:
The etching rate of the Cr film 2 by the 5:3 mixed gas plasma is higher than that of O 2 and O 2 in the conventional example.
The inventors' research has revealed that the etching rate is higher than the etching rate by plasma of a mixed gas of CCl 4 at a volume ratio of 19:5.
第３図は発明者らの研究によるO2およびCCl4
の体積比19：５の混合ガスにCF4を添加した場合
におけるCr膜へのエツチング速度とCF4の添加量
との関係の一例を示す図である。 Figure 3 shows O 2 and CCl 4 according to the inventors' research.
FIG. 3 is a diagram showing an example of the relationship between the etching rate of a Cr film and the amount of CF 4 added when CF 4 is added to a mixed gas with a volume ratio of 19:5.
図において、縦軸はCr膜２へのエツチング速
度（単位Å／min.）を示し、横軸はCF4の添加量
｛CF4／（O2＋CCl4＋CF4）｝（単位％）を示す。
なお、O2、CCl4およびCF4の混合ガスの圧力は
0.2Torrに設定され、ガラス基板１の温度は20℃
に設定されている。 In the figure, the vertical axis shows the etching rate (unit: Å/min.) for the Cr film 2, and the horizontal axis shows the amount of CF 4 added {CF 4 /(O 2 + CCl 4 + CF 4 )} (unit: %). .
Furthermore, the pressure of the mixed gas of O 2 , CCl 4 and CF 4 is
It is set to 0.2 Torr, and the temperature of glass substrate 1 is 20℃
is set to .
第３図に示すように、従来例におけるO2およ
びCCl4の体積比19：５の混合ガスの場合にはCr
膜２へのエツチング速度が30Å／min.程度であ
るが、この混合ガスに10％程度のCF4を添加した
場合、すなわちO2、CCl4およびCF4の体積比19：
５：３の混合ガスの場合にはCr膜２へのエツチ
ング速度が50Å／min.の最大値になり、CF4の添
加量が10％程度以上になる場合にはCr膜２への
エツチング速度が急激に低下する。 As shown in Figure 3, in the case of a mixed gas of O 2 and CCl 4 at a volume ratio of 19:5 in the conventional example, Cr
The etching rate for the film 2 is about 30 Å/min., but when about 10% CF 4 is added to this mixed gas, that is, the volume ratio of O 2 , CCl 4 and CF 4 is 19:
In the case of a 5:3 mixed gas, the etching rate for the Cr film 2 reaches a maximum value of 50 Å/min., and when the amount of CF 4 added is about 10% or more, the etching rate for the Cr film 2 increases. decreases rapidly.
このような現象は、O2、CCl4およびCF4の混合
ガスのプラズマ中における酸素ラジカルO*およ
び塩素ラジカルCl*の生成が、CF4の添加量が10
％程度以内ではCF4の添加によつて増長され、
CF4の添加量が10％程度以上では逆にCF4の添加
によつて妨害されることによつて生ずるものと考
えられる。 This phenomenon is caused by the generation of oxygen radicals O * and chlorine radicals Cl * in the plasma of a mixed gas of O2 , CCl4 , and CF4 .
Within about %, it is increased by the addition of CF4 ,
When the amount of CF 4 added is about 10% or more, it is thought that this phenomenon occurs due to interference caused by the addition of CF 4 .
また、ガラス基板１の温度が20℃から60℃に上
昇すれば、Cr膜２へのエツチング速度の最大値
が50Å／min.から70Å／min.に向上することも
判明した。 It has also been found that when the temperature of the glass substrate 1 increases from 20° C. to 60° C., the maximum etching rate of the Cr film 2 increases from 50 Å/min. to 70 Å/min.
このように、Cr膜２へのエツチング速度が従
来例における30Å／min.から50Å／min.に向上
することによつて、600Å程度の膜厚を有するCr
膜２をエツチングするに要する時間が従来例にお
ける20分から12分に減少し、レジストOEBR−
100膜３ａの膜べりが500Å程度のわずかなものと
なる。 In this way, by improving the etching rate for the Cr film 2 from 30 Å/min. in the conventional example to 50 Å/min.
The time required to etch film 2 has been reduced from 20 minutes in the conventional example to 12 minutes, and the resist OEBR-
The film thickness of the 100 film 3a is as small as about 500 Å.
最後に、第２図Ｅに示すように、従来例の第１
図Ｅに示した段階と同様に、レジストOEBR−
100膜３ａを除去すると、ガラス基板１の主面上
に上記所定パターンを有するCr膜２ａが形成さ
れたこの実施例の方法になるフオトマスクが得ら
れる。 Finally, as shown in Fig. 2E, the first
Similar to the steps shown in Figure E, the resist OEBR−
When the 100% film 3a is removed, a photomask according to the method of this embodiment in which the Cr film 2a having the above-mentioned predetermined pattern is formed on the main surface of the glass substrate 1 is obtained.
以上のように、この実施例の方法では、O2、
CCl4およびCF4の体積比19：５：３の混合ガスの
プラズマによるCr膜２へのエツチング速度が従
来例におけるO2およびCCl4の体積比19：５の混
合ガスのプラズマによるCr膜２へのエツチング
速度より大きいので、Cr膜２へのエツチング時
間が従来例におけるCr膜２へのエツチング時間
より短かくなる。従つて、レジストOEBR−100
膜３ａの膜べりが従来例におけるレジストOEBR
−100膜３ａの膜べりより少なくなり、微細パタ
ーンのCr膜２ａを精度よく形成することができ、
しかも生産性の向上を図ることができる。 As described above, in the method of this example, O 2 ,
The etching rate of the Cr film 2 by the plasma of a mixed gas of CCl 4 and CF 4 in a volume ratio of 19:5:3 is the same as that of the conventional example. Since the etching speed is higher than the etching speed for the Cr film 2, the etching time for the Cr film 2 is shorter than the etching time for the Cr film 2 in the conventional example. Therefore, resist OEBR−100
The thinning of film 3a is the resist OEBR in the conventional example.
-100 film 3a, the film loss is smaller than that of the 100 film 3a, and the finely patterned Cr film 2a can be formed with high precision.
Moreover, productivity can be improved.
この実施例では、ガラス基板１の主面上に形成
されたCr膜２について述べたが、これに限らず、
半導体基板などのその他の基板の主面上に形成さ
れ酸素ラジカルおよび塩素ラジカルとの反応によ
つてエツチング可能な材料からなる被エツチング
膜についてもこの実施例と同様の効果がある。 In this embodiment, the Cr film 2 formed on the main surface of the glass substrate 1 has been described, but the invention is not limited to this.
The same effect as in this embodiment can be obtained for an etched film formed on the main surface of another substrate such as a semiconductor substrate and made of a material that can be etched by reaction with oxygen radicals and chlorine radicals.
また、この実施例では、レジストOEBR−100
膜３ａを用いる場合について述べたが、これに限
らず、フオトレジスト膜などのその他のレジスト
膜を用いる場合でもこの実施例と同様の効果があ
る。 In addition, in this example, resist OEBR-100
Although the case where the film 3a is used has been described, the present invention is not limited to this, and even when using other resist films such as a photoresist film, the same effects as in this embodiment can be obtained.
なお、この実施例では、O2およびCCl4の混合
ガスにCF4の所定量を添加する場合について述べ
たが、この発明はこれに限らず、O2とCCl2F2、
CCl3F、CClF3などの有機塩素系ハロカーボンと
の混合ガスにC2F6、C3F8、CHF3、CBrF3などの
有機フツ素系ハロカーボンの所定量を添加する場
合にも適用することができる。 Although this embodiment describes the case where a predetermined amount of CF 4 is added to a mixed gas of O 2 and CCl 4 , the present invention is not limited to this .
Also when adding a predetermined amount of organic fluorine type halocarbons such as C 2 F 6 , C 3 F 8 , CHF 3 , CBrF 3 to a mixed gas with organic chlorine type halocarbons such as CCl 3 F and CClF 3 . Can be applied.
以上、説明したように、この発明のドライエツ
チングによるパターンの形成方法では、基板の主
面上に形成され酸素ラジカルおよび塩素ラジカル
との反応によつてエツチング可能な材料からなる
被エツチング膜の所定パターンの部分の表面上に
レジスト膜を形成し、このレジスト膜をマスクと
して被エツチング膜に酸素および有機塩素系ハロ
カーボンの混合ガスのプラズマ中におけるエツチ
ングを施し、上記所定パターンを有する被エツチ
ング膜を形成する方法において、酸素および有機
塩素系ハロカーボンとして四塩化炭素を混合した
ガスに有機フツ素系ハロカーボンとして四フツ化
炭素を添加し、かつその混合比率を19：５：３の
体積比とするようにしたので、所定量の有機フツ
素系ハロカーボンを添加した酸素および有機塩素
系ハロカーボンの混合ガスのプラズマによる被エ
ツチング膜へのエツチング速度が有機フツ素系ハ
ロカーボンを添加しない酸素および有機塩素系ハ
ロカーボンの混合ガスのプラズマによる被エツチ
ング膜へのエツチング速度より大きくなる。従つ
て、有機フツ素系ハロカーボンを添加した酸素お
よび有機塩素系ハロカーボンの混合ガスのプラズ
マによる被エツチング膜へのエツチング時間が有
機フツ素系ハロカーボンを添加しない酸素および
有機塩素系ハロカーボンの混合ガスのプラズマに
よる被エツチング膜へのエツチング時間より短か
くなるので、レジスト膜の膜べりが少なくなり、
微細パターンの被エツチング膜を精度よく形成す
ることができ、しかも生産性の向上を図ることが
できる。
As explained above, in the method of forming a pattern by dry etching of the present invention, a predetermined pattern of a film to be etched, which is formed on the main surface of a substrate and is made of a material that can be etched by reaction with oxygen radicals and chlorine radicals, is used. A resist film is formed on the surface of the portion, and using this resist film as a mask, the film to be etched is etched in a plasma of a mixed gas of oxygen and organic chlorine-based halocarbon to form a film to be etched having the above-mentioned predetermined pattern. In the method, carbon tetrafluoride is added as an organic fluorine-based halocarbon to a gas containing oxygen and carbon tetrachloride as an organic chlorine-based halocarbon, and the mixing ratio is set to a volume ratio of 19:5:3. As a result, the etching rate of the film to be etched by the plasma of a mixed gas of oxygen and organochlorine halocarbon to which a predetermined amount of organic fluorine halocarbon is added is lower than that of oxygen and organic halocarbon to which the organic fluorine halocarbon is not added. This is faster than the etching rate of the film to be etched by the plasma of the chlorine-based halocarbon mixture gas. Therefore, the etching time for the film to be etched by the plasma of a mixed gas of oxygen and organochlorine halocarbons to which organofluorine halocarbons are added is longer than that of oxygen and organochlorine halocarbons to which organofluorine halocarbons are not added. Since the etching time for the film to be etched is shorter than that of the mixed gas plasma, the film loss of the resist film is reduced.
A finely patterned film to be etched can be formed with high precision, and productivity can be improved.
第１図はフオトマスクの従来の製造方法の一例
の主要段階における状態を順次示す断面図、第２
図はフオトマスクの製造に適用したこの発明の一
実施例の主要段階における状態を順次示す断面
図、第３図は発明者らの研究によるO2および
CCl4の体積比19：５の混合ガスにCF4を添加した
場合におけるCr膜へのエツチング速度とCF4の添
加量との関係の一例を示す図である。
図において、１はガラス基板（基板）、２はCr
膜（被エツチング膜）、２ａはCr膜２へのエツチ
ングによつて形成され所定パターンを有するCr
膜（被エツチング膜へのエツチングによつて形成
され所定パターンを有する被エツチング膜）、３
ａは所定パターンを有するレジストOEBR−100
膜（所定パターンを有するレジスト膜）である。
なお、図中同一符号はそれぞれ同一または相当部
分を示す。
Figure 1 is a cross-sectional view sequentially showing the main stages of an example of a conventional photomask manufacturing method;
The figures are cross-sectional views sequentially showing the main stages of an embodiment of the present invention applied to the production of photomasks, and Fig. 3 shows O 2 and
FIG. 3 is a diagram showing an example of the relationship between the etching rate of a Cr film and the amount of CF 4 added when CF 4 is added to a mixed gas with a volume ratio of CCl 4 of 19:5. In the figure, 1 is a glass substrate (substrate), 2 is a Cr
The film (film to be etched) 2a is formed by etching the Cr film 2 and has a predetermined pattern.
film (film to be etched having a predetermined pattern formed by etching the film to be etched), 3
a is resist OEBR-100 with a predetermined pattern
film (resist film having a predetermined pattern).
Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
塩素ラジカルとの反応によつてエツチング可能な
クロム膜の所定パターン上にレジスト膜を形成
し、このレジスト膜をマスクとして、酸素および
四塩化炭素を主成分とするエツチングガスにより
上記クロム膜にエツチングを施し、上記所定パタ
ーンを有するクロム膜を形成する方法において、
酸素、四塩化炭素および四フツ化炭素を体積比
19：５：３の比率で混合したものを、上記エツチ
ングガスとして用いることを特徴とするドライエ
ツチングによるパターンの形成方法。1. A resist film is formed on a predetermined pattern of a chromium film formed on the main surface of a substrate and can be etched by reaction with oxygen radicals and chlorine radicals, and using this resist film as a mask, oxygen and carbon tetrachloride are mainly etched. In the method of etching the chromium film with an etching gas as a component to form a chromium film having the predetermined pattern,
Volume ratio of oxygen, carbon tetrachloride and carbon tetrafluoride
A method of forming a pattern by dry etching, characterized in that a mixture of 19:5:3 is used as the etching gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7702384A JPS60219748A (en) | 1984-04-16 | 1984-04-16 | Pattern formation by dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7702384A JPS60219748A (en) | 1984-04-16 | 1984-04-16 | Pattern formation by dry etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60219748A JPS60219748A (en) | 1985-11-02 |
| JPH0343777B2 true JPH0343777B2 (en) | 1991-07-03 |
Family
ID=13622153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7702384A Granted JPS60219748A (en) | 1984-04-16 | 1984-04-16 | Pattern formation by dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60219748A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000214575A (en) * | 1999-01-26 | 2000-08-04 | Sharp Corp | Formation of chromium mask |
| US7115523B2 (en) | 2000-05-22 | 2006-10-03 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| US6391790B1 (en) | 2000-05-22 | 2002-05-21 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| WO2001096955A2 (en) * | 2000-06-15 | 2001-12-20 | Applied Materials, Inc. | A method and apparatus for etching metal layers on substrates |
| US7183201B2 (en) | 2001-07-23 | 2007-02-27 | Applied Materials, Inc. | Selective etching of organosilicate films over silicon oxide stop etch layers |
| WO2003021659A1 (en) | 2001-09-04 | 2003-03-13 | Applied Materials, Inc. | Methods and apparatus for etching metal layers on substrates |
| US6960413B2 (en) | 2003-03-21 | 2005-11-01 | Applied Materials, Inc. | Multi-step process for etching photomasks |
| US7077973B2 (en) | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
| US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56144541A (en) * | 1980-04-11 | 1981-11-10 | Fujitsu Ltd | Etching method |
| JPS60148123A (en) * | 1983-12-30 | 1985-08-05 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Dry etching method |
-
1984
- 1984-04-16 JP JP7702384A patent/JPS60219748A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56144541A (en) * | 1980-04-11 | 1981-11-10 | Fujitsu Ltd | Etching method |
| JPS60148123A (en) * | 1983-12-30 | 1985-08-05 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Dry etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60219748A (en) | 1985-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6514672B2 (en) | Dry development process for a bi-layer resist system | |
| US6749974B2 (en) | Disposable hard mask for photomask plasma etching | |
| JPH10199864A (en) | Method of etching antireflection film | |
| JPH11186235A (en) | Manufacture of semiconductor device | |
| JP2000091318A (en) | Manufacture of semiconductor device | |
| JPH0343777B2 (en) | ||
| JP3361918B2 (en) | Method for forming fine holes in semiconductor integrated circuit device | |
| KR20100134418A (en) | Method for forming contact hole using spacer patterning technology | |
| US4774164A (en) | Chrome mask etch | |
| JPH0516658B2 (en) | ||
| JPH0466345B2 (en) | ||
| JPH08227873A (en) | Manufacture of semiconductor device | |
| JPS61185928A (en) | Pattern forming method | |
| JPH07307328A (en) | Pattern forming method | |
| JPS6213813B2 (en) | ||
| JPS6042834A (en) | Manufacture of semiconductor device | |
| KR0153508B1 (en) | Method of fabricating a semiconductor device | |
| JP2798944B2 (en) | Thin film formation method | |
| KR100528266B1 (en) | Solution for removing residual wall residue after dry etching | |
| JP2697739B2 (en) | Pattern formation method | |
| KR20030049940A (en) | Method for forming the phase shifting mask | |
| KR940005621B1 (en) | Method of making multi-layer resist | |
| JPS594857B2 (en) | Method for forming electrodes and wiring layers of semiconductor devices | |
| JPH04155816A (en) | Manufacture of semiconductor device | |
| KR20050064265A (en) | Method of patterning insulating layer for semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |