KR20030049940A - Method for forming the phase shifting mask - Google Patents

Method for forming the phase shifting mask Download PDF

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KR20030049940A
KR20030049940A KR1020010080287A KR20010080287A KR20030049940A KR 20030049940 A KR20030049940 A KR 20030049940A KR 1020010080287 A KR1020010080287 A KR 1020010080287A KR 20010080287 A KR20010080287 A KR 20010080287A KR 20030049940 A KR20030049940 A KR 20030049940A
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South Korea
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photoresist pattern
film
pattern
chromium
phase inversion
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KR1020010080287A
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Korean (ko)
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KR100790564B1 (en
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이준식
김문식
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

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  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A method for fabricating a phase shift mask is provided to prevent particle defects caused by an apparatus for measuring a critical dimension(CD) by reducing the number of times that the CD measuring apparatus is used. CONSTITUTION: A phase shift layer(210) and a chrome layer(220) are sequentially formed on a quartz substrate(200). The first photoresist pattern is formed on the chrome layer. A chrome pattern is formed by using the first photoresist pattern as an etch mask. After the first photoresist pattern is removed, the CD of the chrome pattern is measured. The first photoresist pattern is eliminated and a cleaning process is performed. An isotropic dry etch process in which the chrome layer is used as an etch mask and chemicals are used is performed to correct the CD of the phase shift layer. After the second photoresist is formed on the resultant structure, a beam writing process and a development process are performed to form the second photoresist pattern. The chrome layer is removed by using the second photoresist pattern as an etch barrier.

Description

위상반전 마스크 제작방법{Method for forming the phase shifting mask}Method for forming the phase shifting mask

본 발명은 포토마스크 제조에 관한 것으로, 특히 위상반전 마스크 제조에 있어서, 크롬 패턴을 형성하고, 그 크롬패턴의 FICD를 측정한 후, 크롬패턴의 크롬막을 식각마스크로 크롬막과 위상반전막 및 석영기판과 식각선택비가 높은 화학제를 이용하여 등방성 식각공정을 진행하여 CD를 보정함으로써, CD 측정장치 빈번한 사용으로 인한 파티클 결함을 방지할 수 있는 위상반전 마스크 제작방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of photomasks. In particular, in the manufacture of a phase inversion mask, after forming a chromium pattern and measuring the FICD of the chromium pattern, the chromium film of the chromium pattern is etched using an chromium film, a phase inversion film, and quartz The present invention relates to a method of fabricating a phase shift mask capable of preventing particle defects caused by frequent use of a CD measuring device by performing CD isotropic etching process using a substrate and a chemical having a high etching selectivity.

반도체 소자의 집적도가 높아짐에 따라, 0.13㎛ 이하의 최소치수(critical dimension)를 실현하는 리소그라피 기술이 필요하게 되었고, 상기와 같은 좁은 패턴에 대한 해상력을 높이기 위해서는 포토마스크와 포토레지스트 양측면에서 개선이 필요하다.As the degree of integration of semiconductor devices increases, lithography technology that realizes a critical dimension of 0.13 μm or less is required. In order to increase the resolution of such narrow patterns, improvements in both the photomask and the photoresist are required. Do.

포토마스크의 측면에서는 1982년 레벤슨에 의해 처음 개발된 위상반전마스크 (PSM : Phase Shifting Mask)가 많은 개량을 거듭하여, 최근 반투과형 위상반전마스크가 각광을 받고 있다. 잘 알려진 레벤슨형 또는 감쇄형(attenuate) 위상반전마스크는 결함 검출의 툴이 없기 때문에 실제 반도체 제조공정에서 이용하기 어려운 점이 있으나, 반투과형(half-tone) 위상반전마스크는 결함 검출을 위한 장비가 제작되어 있기 때문에 실제 공정에서 많이 적용되고 있다.In terms of the photomask, the Phase Shifting Mask (PSM), first developed by Levenson in 1982, has undergone many improvements, and the semi-transmissive phase shift mask has recently been in the spotlight. The well-known Levenson or attenuate phase inversion mask is difficult to use in the actual semiconductor manufacturing process because there is no tool for defect detection, but the half-tone phase inversion mask is not suitable for defect detection. Because it is manufactured, it is applied a lot in the actual process.

도 1a 내지 도 1d는 종래 위상반전 마스크 제작방법을 설명하기 위해 순차적으로 나타낸 단면도이다.1A through 1D are cross-sectional views sequentially illustrating a method of fabricating a conventional phase inversion mask.

도 1a에 도시된 바와 같이, 상기 석영 기판(100)의 전면에 위상반전막(110)과 크롬막을(120) 순차적으로 적층하고, 이 크롬막(120) 상에 제 1포토레지스트를 도포한 후, 전자 빔(Electron beam) 라이팅(Writing)과 현상(development) 공정이 진행되어 제 1포토레지스트 패턴(130)이 형성되었다.As shown in FIG. 1A, the phase inversion film 110 and the chromium film 120 are sequentially stacked on the entire surface of the quartz substrate 100, and then the first photoresist is coated on the chromium film 120. And the electron beam writing and A development process was performed to form the first photoresist pattern 130.

이어서, 도 1b에 도시된 바와 같이, 상기 제 1포토레지스트 패턴의 CD를 CD측정기를 사용하여 측정한 후, 상기 크롬막을 식각 마스크로 하여 크롬막(120)과 위상반전막(110)을 식각함으로써 크롬 패턴이 형성되었다.Subsequently, as illustrated in FIG. 1B, after measuring the CD of the first photoresist pattern using a CD measuring instrument, the chromium film 120 and the phase inversion film 110 are etched by using the chromium film as an etching mask. A chrome pattern was formed.

이때, 상기 크롬 패턴의 CD의 중앙값을 맞추고자 크롬막을 약 80% 식각한 후, 다시 CD측정기를 이용하여 크롬막 패턴의 CD를 측정한 후, 크롬막의 오버 (over)식각율을 결정하여 상기 크롬막의 오버식각율에 20%를 더하여 식각하면서 크롬패턴 CD의 중앙값을 맞췄다.In this case, after etching about 80% of the chromium film to match the median value of the CD of the chromium pattern, the CD of the chromium film pattern is measured again using a CD measuring instrument, and then the over etch rate of the chromium film is determined to determine the chromium. The film was etched by adding 20% to the overetch rate of the film to adjust the median value of the chrome pattern CD.

그 후, 도 1c에 도시된 바와 같이, 상기 결과물 상의 제 1포토레지스트 패턴(미도시함)을 제거한 후, 결과물 상에 세정공정을 진행하여 제 1포토레지스트 패턴의 잔유물을 제거하고 CD측정기를 이용하여 최종 크롬 패턴의 FICD를 측정하였다.Then, as shown in Figure 1c, after removing the first photoresist pattern (not shown) on the resultant, by performing a cleaning process on the resultant to remove the residue of the first photoresist pattern and using a CD measuring instrument FICD of the final chromium pattern was measured.

이어서, 상기 결과물 상에 제 2포토레지스트를 도포한 후, 위상반전이 일어나야 하는 영역(A)의 크롬막(120)을 제거하기 위해 전자 빔(Electron beam) 라이팅 (Writing)과 현상(development) 공정이 진행되어 제 2포토레지스트 패턴(미도시함)을 형성하였다.Subsequently, after applying the second photoresist on the resultant, the electron beam writing and the like are performed to remove the chromium film 120 in the region A in which phase inversion is to occur. A development process was performed to form a second photoresist pattern (not shown).

그리고, 도 1d에 도시된 바와 같이, 상기 제 2포토레지스트 패턴(미도시함)을 식각 마스크로 하여 크롬막(120)을 식각한 후, 제 2포토레지스트 패턴이 제거됨으로써 위상반전 마스크가 형성되었다.As illustrated in FIG. 1D, after etching the chromium film 120 using the second photoresist pattern (not shown) as an etching mask, a phase inversion mask was formed by removing the second photoresist pattern. .

그런데, 상기와 같은 방법으로 위상반전 마스크를 제작하게 되면, 상기 크롬패턴의 CD를 맞추기 위해 위상반전 마스크 제작 공정 중에 CD측정기를 빈번하게 사용함으로써, CD측정기의 빈번한 사용으로 인한 파티클이 발생되는 문제점이 있었다.However, when the phase inversion mask is manufactured in the same manner as above, by using the CD measuring instrument frequently during the phase inversion mask fabrication process to match the CD of the chrome pattern, there is a problem that particles are generated due to the frequent use of the CD measuring instrument. there was.

또한, 상기 크롬막 식각 시, 부분적인 식각 후, 반응챔버 내의 노출로 인해 발생되는 반응생성물에 의해 포토마스크 제작 수율이 떨어지는 문제점이 있었다.In addition, when the chromium film is etched, there is a problem in that the yield of the photomask is decreased by the reaction product generated due to the exposure in the reaction chamber after the partial etching.

본 발명은 상기와 같은 문제점을 해결하기 위해 안출된 것으로, 본 발명의 목적은 석영기판 상에 위상반전막과 크롬막을 증착하고, 포토레지스트 패턴을 형성한 후, 건식식각을 진행하여 크롬 패턴을 형성하고, 크롬패턴의 FICD를 측정한 후, 크롬패턴의 크롬막을 식각마스크로 크롬막과 위상반전막 및 석영기판과 식각선택비가 높은 화학제를 이용하여 등방성 식각공정을 진행하여 CD를 보정함으로써, CD 측정장치의 사용을 줄일 수 있어 CD 측정장치 사용으로 인한 파티클 결함을 방지하여 포토마스크 제작 수율을 향상시키도록 하는 것이 목적이다.The present invention has been made to solve the above problems, an object of the present invention is to deposit a phase inversion film and a chromium film on a quartz substrate, form a photoresist pattern, and then dry etching to form a chromium pattern After measuring the FICD of the chromium pattern, the chromium film of the chromium pattern is used as an etch mask to correct the CD by performing an isotropic etching process using a chromium film, a phase inversion film, a quartz substrate, and a chemical having a high etching selectivity. The purpose of the present invention is to reduce the use of the measuring device, thereby preventing particle defects caused by the use of the CD measuring device, thereby improving the yield of the photomask.

도 1a 내지 도 1d는 종래 위상반전 마스크 제작방법을 설명하기 위해 순차적으로 나타낸 단면도이다.1A through 1D are cross-sectional views sequentially illustrating a method of fabricating a conventional phase inversion mask.

도 2a 내지 도 2d는 본 발명의 실시예에 따른 위상반전 마스크 제작방법을 설명하기 위해 순차적으로 나타낸 단면도이다.2A through 2D are cross-sectional views sequentially illustrating a method of fabricating a phase inversion mask according to an embodiment of the present invention.

-- 도면의 주요부분에 대한 부호의 설명 ---Explanation of symbols for the main parts of the drawing-

200 : 석영기판 210 : 위상반전막200: quartz substrate 210: phase inversion film

220 : 크롬막 230 : 제 1포토레지스트 패턴220: chromium film 230: first photoresist pattern

240 : 화학제240: chemical agent

상기 목적을 달성하기 위하여, 본 발명은 위상반전 마스크 제작에 있어서, 석영 기판의 전면에 위상반전막과 크롬막을 순차적으로 적층하고 이 크롬막 상에 제 1 포토레지스트 패턴을 형성하는 단계와, 상기 제 1포토레지스트 패턴을 식각 마스크로 하여 크롬 패턴이 형성하고 제 1포토레지스트 패턴을 제거한 후 크롬 패턴의 CD를 측정하는 단계와, 상기 제 1포토레지스트 패턴을 제거하고 세정공정을진행한 후 크롬막을 식각마스크로 화학제를 이용하여 등방성 건식식각공정을 진행하여 위상반전막의 CD를 보정하는 단계와, 상기 결과물 상에 제 2 포토레지스트를 도포한 후 빔 라이팅 및 현상 공정을 진행하여 제 2포토레지스트 패턴을 형성하는 단계와, 상기 제 2포토레지스트 패턴을 식각 베리어로 하여 크롬막을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 위상반전 마스크 제작방법을 제공한다.In order to achieve the above object, the present invention provides a method for fabricating a phase inversion mask, comprising: sequentially laminating a phase inversion film and a chromium film on the entire surface of a quartz substrate and forming a first photoresist pattern on the chromium film; (1) forming a chromium pattern using the photoresist pattern as an etching mask, removing the first photoresist pattern, measuring the CD of the chromium pattern, removing the first photoresist pattern, performing a cleaning process, and then etching the chromium film. Performing an isotropic dry etching process using a chemical as a mask to correct the CD of the phase shift film, applying a second photoresist onto the resultant, and then performing a beam writing and developing process to form a second photoresist pattern. And removing the chromium film by using the second photoresist pattern as an etching barrier. It provides a method for producing a phase inversion mask, characterized in that.

바람직하게는, 본 발명은 상기 등방성 건식식각 공정 시, 식각제로 사용되는 화학제는 크롬막과 위상반전막 및 석영기판과 식각선택비가 높은 화학제로 SF6와 He 및 O2를 혼합한 혼합가스를 사용하는 것을 특징으로 한다.Preferably the present invention provides the isotropic dry etching process, when a mixed gas of chemical agent used zero etching is mixed with SF 6 and He, and O 2 chromium film and the phase shift film and the quartz substrate and the etching selectivity ratio is high chemical agent It is characterized by using.

이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설명하고자 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2a 내지 도 2d는 본 발명의 실시예에 따른 위상반전 마스크 제작방법을 설명하기 위해 순차적으로 나타낸 단면도이다.2A through 2D are cross-sectional views sequentially illustrating a method of fabricating a phase inversion mask according to an embodiment of the present invention.

도 2a에 도시된 바와 같이, 상기 석영 기판(200)의 전면에 위상반전막(210)과 크롬막을(220) 순차적으로 적층하고, 이 크롬막(220) 상에 제 1포토레지스트를 도포하며, 이때, 상기 위상반전막(210)은 몰디브덴 실리사이드막으로 형성한다.As shown in FIG. 2A, the phase inversion film 210 and the chromium film 220 are sequentially stacked on the entire surface of the quartz substrate 200, and a first photoresist is applied on the chromium film 220. In this case, the phase inversion film 210 is formed of a molybdenum silicide film.

그리고, 상기 크롬막(220) 상에 도포된 제 1포토레지스트에 전자 빔 (Electron beam) 라이팅(Writing)과 현상(development) 공정을 진행하여 제 1 포토레지스트 패턴(230)을 형성한다.The first photoresist coated on the chromium film 220 may have an electron beam writing and A development process is performed to form the first photoresist pattern 230.

그 후, 도 2b에 도시된 바와 같이, 상기 제 1포토레지스트 패턴(230)을 식각 마스크로 하여 크롬막(220)과 위상반전막(210)을 식각함으로써 크롬 패턴이 형성한 후, 크롬 패턴의 FICD(Final Inspection Critical Dimension)를 측정한다.Thereafter, as shown in FIG. 2B, the chromium pattern is formed by etching the chromium film 220 and the phase shift film 210 using the first photoresist pattern 230 as an etching mask. Final Inspection Critical Dimension (FICD) is measured.

이때, 상기 크롬막(220)과 위상반전막(210) 식각 시, 2단계로 식각공정을 진행하며, 제 1단계로 크롬막(220)을 10mTorr의 압력에서 400W의 전력으로 Cl2가스 40sccm과 O2가스 5sccm을 주입하여 150% 과도 식각한 후, 제 2단계로 위상반전막 (210)을 ex-situ로 플로린계열의 가스를 식각가스로 사용하여 식각함으로써 위상이 180±3°조건을 만족하게 한다.In this case, when the chromium film 220 and the phase inversion film 210 are etched, the etching process is performed in two steps, and in the first step, the chromium film 220 is subjected to 40 sccm of Cl 2 gas at a power of 400 W at a pressure of 10 mTorr. After injecting 5 sccm of O 2 gas to 150% over-etching, in the second step, the phase inversion film 210 is ex-situ etched using fluorine-based gas as an etching gas, thereby satisfying the phase of 180 ± 3 °. Let's do it.

이어서, 도 2c에 도시된 바와 같이, 상기 제 1포토레지스트 패턴(미도시함)을 제거하고 세정공정을 진행한 후 크롬막(220)을 식각마스크로 화학제를 이용하여 등방성 건식식각공정을 진행하여 위상반전막(210)의 CD를 보정한다.Subsequently, as shown in FIG. 2C, after the first photoresist pattern (not shown) is removed and a cleaning process is performed, an isotropic dry etching process is performed using a chromium film 220 as an etching mask using a chemical agent. The CD of the phase shift film 210 is corrected.

이때, 상기 등방성 건식식각 공정 시, 화학제는 크롬막(220)과 위상반전막 (210) 및 석영기판(200)과 식각선택비가 높은 화학제로 SF6와 He 및 O2를 혼합한 혼합가스를 사용한다.At this time, during the isotropic dry etching process, the chemical agent is a chromium film 220, the phase inversion film 210 and the quartz substrate 200 and a chemical agent having a high etching selectivity mixed gas of SF 6 , He and O 2 use.

계속하여, 도 2d에 도시된 바와 같이, 상기 결과물 상에 제 2포토레지스트를 도포한 후, 위상반전이 일어나야 하는 영역(A)의 크롬막(미도시함)을 제거하기 위해 전자 빔(Electron beam) 라이팅(Writing)과 현상(development) 공정이 진행되어 제 2포토레지스트 패턴(미도시함)을 형성하였다.Subsequently, as shown in FIG. 2D, after applying the second photoresist on the resultant product, an electron beam is removed to remove the chromium film (not shown) of the region A in which phase inversion should occur. ) Writing and A development process was performed to form a second photoresist pattern (not shown).

그리고, 상기 제 2포토레지스트 패턴(미도시함)을 식각 마스크로 하여 크롬막을 식각한 후, 제 2포토레지스트 패턴이 제거하여 위상반전 마스크를 형성한다.The chromium film is etched using the second photoresist pattern (not shown) as an etching mask, and then the second photoresist pattern is removed to form a phase inversion mask.

따라서, 상기한 바와 같이, 본 발명에 따른 위상반전 마스크 제작방법을 적용하게 되면, 위상반전 마스크 제조에 있어서, 석영기판 상에 위상반전막과 크롬막을 증착하고, 포토레지스트 패턴을 형성한 후, 건식식각을 진행하여 크롬 패턴을 형성하고, 크롬패턴의 FICD(Final Inspection Critical Dimension)를 측정한 후, 크롬패턴의 크롬막을 식각마스크로 크롬막과 위상반전막 및 석영기판과 식각선택비가 높은 화학제를 이용하여 등방성 식각공정을 진행하여 CD를 보정함으로써, CD 측정장치의 사용을 줄일 수 있어 CD 측정장치 사용으로 인한 파티클 결함이 방지되어 포토마스크 제작 수율을 향상 시킬수 있도록 하는 효과가 있다.Therefore, as described above, if the method of fabricating the phase inversion mask according to the present invention is applied, the phase inversion mask and the chromium film are deposited on the quartz substrate and the photoresist pattern is formed in the phase inversion mask manufacturing. After etching, the chrome pattern is formed, and the FICD (Final Inspection Critical Dimension) of the chrome pattern is measured, and the chromium film of the chrome pattern is etched using a chromium film, a phase inversion film, a quartz substrate, and a chemical with high etching selectivity. By performing the isotropic etching process to calibrate the CD, the use of the CD measuring device can be reduced, so that particle defects due to the use of the CD measuring device can be prevented, thereby improving the yield of the photomask.

Claims (2)

위상반전 마스크 제작에 있어서, 석영 기판의 전면에 위상반전막과 크롬막을 순차적으로 적층하고, 이 크롬막 상에 제 1 포토레지스트 패턴을 형성하는 단계와;A phase inversion mask is fabricated, comprising: sequentially laminating a phase inversion film and a chromium film on the entire surface of a quartz substrate, and forming a first photoresist pattern on the chromium film; 상기 제 1포토레지스트 패턴을 식각 마스크로 하여 크롬 패턴이 형성하고, 제 1포토레지스트 패턴을 제거한 후, 크롬 패턴의 CD를 측정하는 단계와;Forming a chromium pattern using the first photoresist pattern as an etching mask, removing the first photoresist pattern, and then measuring the CD of the chromium pattern; 상기 제 1포토레지스트 패턴을 제거하고 세정공정을 진행한 후, 크롬막을 식각마스크로 화학제를 이용하여 등방성 건식식각공정을 진행하여 위상반전막의 CD를 보정하는 단계와;Correcting the CD of the phase shift film by removing the first photoresist pattern and performing a cleaning process, and then performing an isotropic dry etching process using a chromium film as an etching mask using a chemical agent; 상기 결과물 상에 제 2 포토레지스트를 도포한 후, 빔 라이팅 및 현상 공정을 진행하여 제 2 포토레지스트 패턴을 형성하는 단계와;Applying a second photoresist on the resultant, and then performing a beam writing and developing process to form a second photoresist pattern; 상기 제 2 포토레지스트 패턴을 식각 베리어로 하여 크롬막을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 위상반전 마스크 제작방법.And removing the chromium film by using the second photoresist pattern as an etching barrier. 제 1항에 있어서, 상기 등방성 건식식각 공정 시, 식각제로 사용되는 화학제는 크롬막과 위상반전막 및 석영기판과 식각선택비가 높은 화학제로 SF6와 He 및 O2를 혼합한 혼합가스를 사용되는 것을 특징으로 하는 위상반전 마스크 제작방법.The method of claim 1, wherein the chemical used as an etchant in the isotropic dry etching process is a chromium film, a phase inversion film, a quartz substrate and a chemical agent having a high etching selectivity using a mixed gas of SF 6 , He and O 2 Phase inversion mask manufacturing method characterized in that.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7389491B2 (en) 2005-03-14 2008-06-17 Samsung Electronics Co., Ltd. Methods, systems and computer program products for correcting photomask using aerial images and boundary regions
KR100945919B1 (en) * 2007-02-21 2010-03-05 주식회사 하이닉스반도체 Method for fabricating photomask in semiconductor device
KR101034540B1 (en) * 2003-12-22 2011-05-12 주식회사 하이닉스반도체 Method for manufacturing Phase Shift MASK

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KR0170686B1 (en) * 1995-09-13 1999-03-20 김광호 The manufacturing method of half-tone phase shifht mask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034540B1 (en) * 2003-12-22 2011-05-12 주식회사 하이닉스반도체 Method for manufacturing Phase Shift MASK
US7389491B2 (en) 2005-03-14 2008-06-17 Samsung Electronics Co., Ltd. Methods, systems and computer program products for correcting photomask using aerial images and boundary regions
KR100945919B1 (en) * 2007-02-21 2010-03-05 주식회사 하이닉스반도체 Method for fabricating photomask in semiconductor device
US8021801B2 (en) 2007-02-21 2011-09-20 Hynix Semiconductor Inc. Method for fabricating photomask in semiconductor device

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