JPS61185928A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS61185928A
JPS61185928A JP2517985A JP2517985A JPS61185928A JP S61185928 A JPS61185928 A JP S61185928A JP 2517985 A JP2517985 A JP 2517985A JP 2517985 A JP2517985 A JP 2517985A JP S61185928 A JPS61185928 A JP S61185928A
Authority
JP
Japan
Prior art keywords
resist
performed
titanium nitride
nitride film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2517985A
Other versions
JPH061764B2 (en
Inventor
Shuichi Kanamori
Takahiro Makino
Yasusuke Yamamoto
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP2517985A priority Critical patent/JPH061764B2/en
Publication of JPS61185928A publication Critical patent/JPS61185928A/en
Publication of JPH061764B2 publication Critical patent/JPH061764B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To enable to perform a highly precise light exposing method having no effect by the light reflected from the roughened surface of a substrate and the film to be processed by a method wherein a titanium nitride film is provided as a reflection-preventing film under the resist on which a pattern exposure is performed. CONSTITUTION:A low reflection titanium nitride film 8 and a resist 4 are deposited on an aluminum film 2, and a patterning is performed on the resist 4 by performing an ordinary light-exposing method. At this time, an exposure having no effect of reflection from the under layer can be performed by having a low reflection titanium nitride film under the resist 4. Then, both of a wet etching and a dry etching can be performed when a low reflection titanium nitride film 8 is etched using said resist as a mask.
JP2517985A 1985-02-14 1985-02-14 Pattern - down forming method Expired - Lifetime JPH061764B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2517985A JPH061764B2 (en) 1985-02-14 1985-02-14 Pattern - down forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2517985A JPH061764B2 (en) 1985-02-14 1985-02-14 Pattern - down forming method

Publications (2)

Publication Number Publication Date
JPS61185928A true JPS61185928A (en) 1986-08-19
JPH061764B2 JPH061764B2 (en) 1994-01-05

Family

ID=12158774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2517985A Expired - Lifetime JPH061764B2 (en) 1985-02-14 1985-02-14 Pattern - down forming method

Country Status (1)

Country Link
JP (1) JPH061764B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232432A (en) * 1987-03-20 1988-09-28 Sony Corp Pattern formation
JPS63316053A (en) * 1987-04-24 1988-12-23 Advanced Micro Devices Inc Reduction in quantity of light
JPH04233719A (en) * 1990-08-06 1992-08-21 American Teleph & Telegr Co <Att> Manufacturing method of semiconductor integrated circuit
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
JPH0934118A (en) * 1995-07-20 1997-02-07 Nec Corp Formation of fine patterns
US5910021A (en) * 1994-07-04 1999-06-08 Yamaha Corporation Manufacture of semiconductor device with fine pattens
JP2006303452A (en) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method
US8759220B1 (en) 2013-02-28 2014-06-24 Shin-Etsu Chemical Co., Ltd. Patterning process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846631A (en) * 1981-09-16 1983-03-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS60240127A (en) * 1984-05-15 1985-11-29 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846631A (en) * 1981-09-16 1983-03-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS60240127A (en) * 1984-05-15 1985-11-29 Fujitsu Ltd Manufacture of semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232432A (en) * 1987-03-20 1988-09-28 Sony Corp Pattern formation
JPS63316053A (en) * 1987-04-24 1988-12-23 Advanced Micro Devices Inc Reduction in quantity of light
JPH04233719A (en) * 1990-08-06 1992-08-21 American Teleph & Telegr Co <Att> Manufacturing method of semiconductor integrated circuit
JPH0775221B2 (en) * 1990-08-06 1995-08-09 エイ・ティ・アンド・ティ・コーポレーション A method of manufacturing a semiconductor integrated circuit
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US5910021A (en) * 1994-07-04 1999-06-08 Yamaha Corporation Manufacture of semiconductor device with fine pattens
US6137175A (en) * 1994-07-04 2000-10-24 Yamaha Corporation Semiconductor device with multi-layer wiring
US6187689B1 (en) 1994-07-04 2001-02-13 Yamaha Corporation Manufacture of semiconductor device with fine patterns
JPH0934118A (en) * 1995-07-20 1997-02-07 Nec Corp Formation of fine patterns
JP2006303452A (en) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method
US8759220B1 (en) 2013-02-28 2014-06-24 Shin-Etsu Chemical Co., Ltd. Patterning process

Also Published As

Publication number Publication date
JPH061764B2 (en) 1994-01-05

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