CN114823286A - 半导体结构的形成方法 - Google Patents
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Abstract
本发明提供了一种半导体结构的形成方法,先在衬底表面形成氧化层,然后再进行涂胶、曝光、显影、显影检查、返工等一系列光刻工序。若存在需要返工的情况,则在返工过程中,可利用氧化层保护衬底不被氧化,使得返工后的衬底相对返工前的衬底不发生变化,确保返工后的衬底在后续的工艺中不受影响,有利于保障所形成的结构的均匀性和可靠性。同时,在完成刻蚀工艺后,将氧化层去除掉,确保最终形成的器件结构的参数符合工艺要求。
Description
技术领域
本发明涉及半导体制造领域,特别涉及一种半导体结构的形成方法。
背景技术
在部分半导体工艺中,会在衬底表面直接沉积光刻胶并刻蚀以形成相应结构。光刻过程中,若经曝光和显影后在光刻胶上形成的光刻胶图形不符合工艺要求,则需要将该光刻材料进行返工,以去掉衬底表面的光刻胶,而返工后的衬底可再次进行光刻。
具体的,如图1中的(a)部分所示为光刻前的衬底,包括衬底1。在图1中的(b)部分,即为在衬底1上形成光刻胶层2,然后,对其进行曝光和显影,使在光刻胶层2上形成需要的光刻胶图形。若此时,形成的光刻胶图形不符合要求,则需要进行返工。返工过程,主要采用干法清洗或湿法清洗去除衬底表面的光刻胶等有机物。接着,如图1中的(c)部分中所示,在返工过程中,用于去除光刻胶等有机物的清洗气体或清洗溶液会与衬底1的表面发生氧化反应,从而在其表面新增一氧化层3,即返工后的衬底4较返工前的衬底1发生了变化。最后,如图1中的(d)部分所示,对返工后的衬底再次进行光刻。此时,光刻胶层2将形成在氧化层3上,但光刻工艺的相关参数未发生变化,从而导致对后续基于该光刻工艺所形成的图形进行刻蚀时将产生严重影响。
例如,图2中的(a)部分所示,对未进行返工的衬底1进行刻蚀以形成设定工艺参数的沟槽,其中沟槽的深度为H。而图2中的(b)部分,对于返工后的衬底4进行刻蚀以形成沟槽时,沟槽的形貌发生了变化,例如套刻误差大于规定值、沟槽的深度变浅(H’小于H)等,从而影响器件的电性均匀性和可靠性。
发明内容
本发明的目的在于提供一种半导体结构的形成方法,以解决返工时会在衬底表面形成新的氧化层,导致返工后的衬底相对返工前的衬底发生了变化,从而对后续的光刻工艺产生影响的问题。
为解决上述技术问题,本发明提供一种半导体结构的形成方法,包括:
步骤一,提供一衬底,并在所述衬底的表面上形成氧化层;
步骤二,在所述氧化层上形成光刻胶层,并进行曝光和显影以形成光刻胶图形;
步骤三,判断是否需要返工;若是,则去除当前的光刻胶层,并返回步骤二;若否,则执行步骤四;
步骤四,刻蚀所述衬底,以将光刻胶层中的光刻胶图形复制至所述衬底中。
可选的,在形成所述氧化层之前,对所述衬底进行清洗以去除表面的污染物。
可选的,采用湿法清洗去除所述污染物。
可选的,形成所述氧化层的方法包括:对衬底进行薄膜淀积处理,以形成所述氧化层。
可选的,形成所述氧化层的方法包括:通入氧气以对衬底进行表面处理。
可选的,所述氧化层的厚度为10埃-50埃。
可选的,所述氧化层的材料包括氧化硅。
可选的,采用干法清洗或湿法清洗或其复合方法,以完成返工。
可选的,所述光刻胶层包括抗反射材料层和光刻胶材料层,其中,所述抗反射材料层位于所述氧化层上,所述光刻胶材料层位于所述抗反射材料层上。
可选的,刻蚀所述衬底后,去除所述光刻胶层和所述氧化层。
本发明提供的半导体结构的形成方法,先在衬底的表面上形成氧化层,然后再进行涂胶、曝光、显影、显影检查、返工等一系列光刻工艺。此时,若存在需要返工的情况,则在返工过程中,可利用氧化层保护衬底不被氧化,使得返工后的衬底相对返工前的衬底不发生变化,确保返工后的衬底在后续的工艺中不受影响,有利于保障所形成的结构的均匀性和可靠性。
附图说明
图1是现有技术中的衬底在光刻返工过程中的变化示意图;
图2是现有技术中返工前-后在衬底中所形成的沟槽的比对图;
图3是本发明一实施例提供的半导体结构的形成方法的流程图;
图4是本发明一实施例提供的半导体结构在其形成过程中的结构示意图。
具体实施方式
如背景技术所述,在返工过程中,衬底的表面容易被氧化而使其表面新增一氧化层3,从而导致返工后的衬底4较返工前的衬底1发生了变化(如图1所示),从而对后续的刻蚀工艺产生影响。本实施例提供了一种半导体结构的形成方法,先在衬底表面形成氧化层,然后再进行涂胶、曝光、显影、显影检查、返工等一系列光刻工艺。若存在需要返工的情况时,在返工过程中,可利用氧化层保护衬底不被氧化,使得返工后的衬底相对返工前的衬底不发生变化,确保返工后的衬底在后续的工艺中不受影响。
以下结合附图和具体实施例对本发明提出的半导体结构的形成方法作进一步详细说明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
图3是本发明一实施例提供的半导体结构的形成方法的流程图。图4为本发明一实施例提供的半导体结构在其形成过程中的结构示意图。结合图3和图4所示,本实施例提供的半导体结构的形成方法包括如下步骤。
步骤一:提供一衬底100,并在所述衬底100的表面上形成氧化层200。其中,所述衬底100例如为外延硅衬底。
本实施例中,在形成所述氧化层200之前,还包括:对所述衬底100进行清洗以去除表面的污染物。在半导体制作过程中,任何与衬底相接触的物品都可能会造成衬底表面发生污染,在衬底表面形成一些颗粒、残留物等污染物,从而对后续的工艺造成影响,影响器件的性能。因此,形成所述氧化层200之前,需要进行预清洗,以将污染物去除。例如,可采用湿法清洗对所述衬底100进行清洗。其中,清洗溶液例如为硫酸,或者硫酸与氧化剂形成的混合溶液,氧化剂例如为过氧化氢,或亚硫酸铵,或臭氧等。
进一步的,所述氧化层200的材料包括氧化硅,厚度例如为10埃-50埃。本实施例中,形成所述氧化层200的方法包括:对衬底进行薄膜淀积处理,以形成所述氧化层200。即,在完成衬底的预清洗后,例如采用等离子体化学气相沉积工艺形成氧化层。
此外,本实施例中,还提供了另一种形成所述氧化层200的方法,包括:通入氧气以对衬底进行表面处理。
步骤二:在所述氧化层200上形成光刻胶层300,并进行曝光和显影以形成光刻胶图形。本实施例中,所述光刻胶层300包括抗反射材料层和光刻胶材料层,其中,所述抗反射材料层位于所述氧化层200上,所述光刻胶材料层位于所述抗反射材料层上。
步骤三:判断是否需要返工;若是,则去除当前的光刻胶层,并返回步骤二;若否,则执行步骤四。即对所述光刻胶图形进行显影检验,例如检查套刻精度、线宽、深度等工艺参数,如果检查结果符合工艺要求,则进行下一步刻蚀工艺,反之,则将该晶圆送去返工,而返工后的晶圆可再次投入使用。同时,在所述光刻胶层300的形成过程,或者曝光过程,或者显影过程等形成光刻胶图形的一系列工艺中,某一道工艺失败,均可进行返工,以将当前的光刻胶层去除。
返工过程,例如可采用干法清洗去除光刻胶层,其中,清洗用的气体包括氧气。通过使氧气在等离子辅助下与光刻胶层进行反应,以去除光刻胶层。或者,采用湿法清洗去除光刻胶层,即通过清洗溶液与光刻胶层发生化学反应进行去除。其中,清洗溶液例如可采用:硫酸和双氧水混合溶液,或氟化氢溶液。如图4中的(d)部分和图4中的(b)部分所示,因有氧化层的阻挡,返工后的衬底相对返工前的衬底未发生变化。
或者,可将干法清洗与湿法清洗相结合以去除光刻胶层。例如,先用等离子体“干法”清洗,然后再用“湿法”清洗。尤其是,若所述光刻胶层300包括抗反射材料层和光刻胶材料层,可先用等离子体在氧气环境下“干洗”清除光刻胶材料层,并使抗反射材料层氧化;然后用稀释的氟化氢溶液清洗,以完全去除所述光刻胶层300。
步骤四,刻蚀所述衬底,以将光刻胶层中的光刻胶图形复制至所述衬底中。具体地,可采用干法刻蚀,例如可采用含有氟碳化合物的气体进行刻蚀。
本实施例中,在衬底上增加了氧化层,利用氧化层对返工过程中采用的清洗剂形成阻挡,从而保护衬底在返工过程中不被氧化,使得返工后的衬底相对返工前的衬底不发生变化,确保返工后的衬底在后续的工艺中不受影响,有利于保障所形成的结构的均匀性和可靠性。
进一步的,本实施例提供的半导体结构的形成方法还包括:刻蚀所述衬底后,去除所述光刻胶层和所述氧化层。具体的,例如可采用湿法工艺去除所述氧化层200。其中,所述清洗溶液例如为氢氟酸,或者氢氟酸与水混合,或氟化铵与水混合。
综上可见,在本发明实施例提供的半导体结构的形成方法中,先在衬底表面形成氧化层,然后再进行涂胶、曝光、显影、显影检查、返工等一系列光刻工序。此时,若存在需要返工的情况,则在返工过程中,可利用氧化层保护衬底不被氧化,使得返工后的衬底相对返工前的衬底不发生变化,确保返工后的衬底在后续的工艺中不受影响,有利于保障所形成的结构的均匀性和可靠性。
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。
Claims (10)
1.一种半导体结构的形成方法,其特征在于,包括:
步骤一,提供一衬底,并在所述衬底的表面上形成氧化层;
步骤二,在所述氧化层上形成光刻胶层,并进行曝光和显影以形成光刻胶图形;
步骤三,判断是否需要返工;若是,则去除当前的光刻胶层,并返回步骤二;若否,则执行步骤四;
步骤四,刻蚀所述衬底,以将光刻胶层中的光刻胶图形复制至所述衬底中。
2.如权利要求1所述的半导体结构的形成方法,其特征在于,在形成所述氧化层之前,对所述衬底进行清洗以去除表面的污染物。
3.如权利要求2所述的半导体结构的形成方法,其特征在于,采用湿法清洗去除所述污染物。
4.如权利要求1所述的半导体结构的形成方法,其特征在于,形成所述氧化层的方法包括:对衬底进行薄膜淀积处理,以形成所述氧化层。
5.如权利要求1所述的半导体结构的形成方法,其特征在于,形成所述氧化层的方法包括:通入氧气以对衬底进行表面处理。
6.如权利要求1所述的半导体结构的形成方法,其特征在于,所述氧化层的厚度为10埃-50埃。
7.如权利要求1所述的半导体结构的形成方法,其特征在于,所述氧化层的材料包括氧化硅。
8.如权利要求1所述的半导体结构的形成方法,其特征在于,采用干法清洗或湿法清洗或其复合方法,以完成返工。
9.如权利要求1所述的半导体结构的形成方法,其特征在于,所述光刻胶层包括抗反射材料层和光刻胶材料层,其中,所述抗反射材料层位于所述氧化层上,所述光刻胶材料层位于所述抗反射材料层上。
10.如权利要求1所述的半导体结构的形成方法,其特征在于,刻蚀所述衬底后,去除所述光刻胶层和所述氧化层。
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