JPH0343772B2 - - Google Patents

Info

Publication number
JPH0343772B2
JPH0343772B2 JP55096918A JP9691880A JPH0343772B2 JP H0343772 B2 JPH0343772 B2 JP H0343772B2 JP 55096918 A JP55096918 A JP 55096918A JP 9691880 A JP9691880 A JP 9691880A JP H0343772 B2 JPH0343772 B2 JP H0343772B2
Authority
JP
Japan
Prior art keywords
sample
etched
etching
electrode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55096918A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5723226A (en
Inventor
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9691880A priority Critical patent/JPS5723226A/ja
Publication of JPS5723226A publication Critical patent/JPS5723226A/ja
Publication of JPH0343772B2 publication Critical patent/JPH0343772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP9691880A 1980-07-17 1980-07-17 Plasma etching device Granted JPS5723226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9691880A JPS5723226A (en) 1980-07-17 1980-07-17 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9691880A JPS5723226A (en) 1980-07-17 1980-07-17 Plasma etching device

Publications (2)

Publication Number Publication Date
JPS5723226A JPS5723226A (en) 1982-02-06
JPH0343772B2 true JPH0343772B2 (ko) 1991-07-03

Family

ID=14177732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9691880A Granted JPS5723226A (en) 1980-07-17 1980-07-17 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5723226A (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3854792D1 (de) * 1987-02-24 1996-02-01 Ibm Plasmareaktor
US5167748A (en) * 1990-09-06 1992-12-01 Charles Evans And Associates Plasma etching method and apparatus
JP2830978B2 (ja) * 1990-09-21 1998-12-02 忠弘 大見 リアクティブイオンエッチング装置及びプラズマプロセス装置
JPH04142734A (ja) * 1990-10-03 1992-05-15 Mitsubishi Electric Corp 微細加工装置及び方法
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
FR3022070B1 (fr) * 2014-06-04 2016-06-24 Univ D'aix-Marseille Procede de texturation aleatoire d'un substrat semiconducteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347277A (en) * 1976-10-13 1978-04-27 Toshiba Corp Etching method
JPS53108286A (en) * 1977-03-03 1978-09-20 Nichiden Varian Kk Etching control device
JPS53136967A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Dry etching method for silicon oxide film on silicon substrate
JPS5572039A (en) * 1978-11-25 1980-05-30 Mitsubishi Electric Corp Plasma etching device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347277A (en) * 1976-10-13 1978-04-27 Toshiba Corp Etching method
JPS53108286A (en) * 1977-03-03 1978-09-20 Nichiden Varian Kk Etching control device
JPS53136967A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Dry etching method for silicon oxide film on silicon substrate
JPS5572039A (en) * 1978-11-25 1980-05-30 Mitsubishi Electric Corp Plasma etching device

Also Published As

Publication number Publication date
JPS5723226A (en) 1982-02-06

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