JPH0341934B2 - - Google Patents

Info

Publication number
JPH0341934B2
JPH0341934B2 JP56018884A JP1888481A JPH0341934B2 JP H0341934 B2 JPH0341934 B2 JP H0341934B2 JP 56018884 A JP56018884 A JP 56018884A JP 1888481 A JP1888481 A JP 1888481A JP H0341934 B2 JPH0341934 B2 JP H0341934B2
Authority
JP
Japan
Prior art keywords
magnetic field
cavity
frequency
ions
resonant layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56018884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56128600A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56128600A publication Critical patent/JPS56128600A/ja
Publication of JPH0341934B2 publication Critical patent/JPH0341934B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
JP1888481A 1980-02-13 1981-02-10 Method and device for producing large ion highly charged and utility using same method Granted JPS56128600A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8003153A FR2475798A1 (fr) 1980-02-13 1980-02-13 Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede

Publications (2)

Publication Number Publication Date
JPS56128600A JPS56128600A (en) 1981-10-08
JPH0341934B2 true JPH0341934B2 (OSRAM) 1991-06-25

Family

ID=9238537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1888481A Granted JPS56128600A (en) 1980-02-13 1981-02-10 Method and device for producing large ion highly charged and utility using same method

Country Status (5)

Country Link
US (1) US4417178A (OSRAM)
JP (1) JPS56128600A (OSRAM)
DE (1) DE3104461A1 (OSRAM)
FR (1) FR2475798A1 (OSRAM)
GB (1) GB2069230B (OSRAM)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2512623A1 (fr) * 1981-09-10 1983-03-11 Commissariat Energie Atomique Procede de fusion et/ou d'evaporation pulsee d'un materiau solide
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
FR2546358B1 (fr) * 1983-05-20 1985-07-05 Commissariat Energie Atomique Source d'ions a resonance cyclotronique des electrons
FR2547692B1 (fr) * 1983-06-15 1988-07-15 Centre Nat Rech Scient Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique
US4534842A (en) * 1983-06-15 1985-08-13 Centre National De La Recherche Scientifique (Cnrs) Process and device for producing a homogeneous large-volume plasma of high density and of low electronic temperature
FR2548436B1 (fr) * 1983-06-30 1986-01-10 Commissariat Energie Atomique Procede de production d'ions lourds multicharges et sources d'ions en regime impulsionnel, permettant la mise en oeuvre du procede
FR2553574B1 (fr) * 1983-10-17 1985-12-27 Commissariat Energie Atomique Dispositif de regulation d'un courant d'ions notamment metalliques fortement charges
FR2556498B1 (fr) * 1983-12-07 1986-09-05 Commissariat Energie Atomique Source d'ions multicharges a plusieurs zones de resonance cyclotronique electronique
GB2162365B (en) * 1984-07-26 1989-06-01 Atomic Energy Authority Uk Ion source
US4641060A (en) * 1985-02-11 1987-02-03 Applied Microwave Plasma Concepts, Inc. Method and apparatus using electron cyclotron heated plasma for vacuum pumping
FR2580427B1 (fr) * 1985-04-11 1987-05-15 Commissariat Energie Atomique Source d'ions negatifs a resonance cyclotronique des electrons
FR2592518B1 (fr) * 1985-12-26 1988-02-12 Commissariat Energie Atomique Sources d'ions a resonance cyclotronique electronique
FR2592520B1 (fr) * 1985-12-27 1988-12-09 Atelier Electro Thermie Const Dispositif de creation d'un champ magnetique glissant, en particulier pour gravure ionique rapide sous champ magnetique
DE3708716C2 (de) * 1987-03-18 1993-11-04 Hans Prof Dr Rer Nat Oechsner Hochfrequenz-ionenquelle
DE3810197A1 (de) * 1987-03-27 1988-10-13 Mitsubishi Electric Corp Plasma-bearbeitungseinrichtung
DE3712971A1 (de) * 1987-04-16 1988-11-03 Plasonic Oberflaechentechnik G Verfahren und vorrichtung zum erzeugen eines plasmas
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
FR2640411B1 (fr) * 1988-12-08 1994-04-29 Commissariat Energie Atomique Procede et dispositif utilisant une source rce pour la production d'ions lourds fortement charges
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
FR2668642B1 (fr) * 1990-10-25 1993-11-05 Commissariat A Energie Atomique Source d'ions fortement charges a sonde polarisable et a resonance cyclotronique electronique.
ATE127615T1 (de) * 1991-05-21 1995-09-15 Materials Research Corp Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.
US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
DE4200235C1 (OSRAM) * 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
WO1994006263A1 (en) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill High pressure magnetically assisted inductively coupled plasma
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US5646488A (en) * 1995-10-11 1997-07-08 Warburton; William K. Differential pumping stage with line of sight pumping mechanism
FR2757310B1 (fr) * 1996-12-18 2006-06-02 Commissariat Energie Atomique Systeme magnetique, en particulier pour les sources ecr, permettant la creation de surfaces fermees d'equimodule b de forme et de dimensions quelconques
KR20010032498A (ko) 1997-11-26 2001-04-25 조셉 제이. 스위니 손상없는 스컵쳐 코팅 증착
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
DE19933762C2 (de) * 1999-07-19 2002-10-17 Juergen Andrae Gepulste magnetische Öffnung von Elektronen-Zyklotron-Resonanz-Jonenquellen zur Erzeugung kurzer, stromstarker Pulse hoch geladener Ionen oder von Elektronen
US7461502B2 (en) 2003-03-20 2008-12-09 Elwing Llc Spacecraft thruster
FR2861947B1 (fr) * 2003-11-04 2007-11-09 Commissariat Energie Atomique Dispositif pour controler la temperature electronique dans un plasma rce
ATE454553T1 (de) * 2004-09-22 2010-01-15 Elwing Llc Antriebssystem für raumfahrzeuge
US7679027B2 (en) * 2005-03-17 2010-03-16 Far-Tech, Inc. Soft x-ray laser based on z-pinch compression of rotating plasma
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105899A (en) * 1960-03-25 1963-10-01 Siemens Ag Electric mass filter
FR1481123A (fr) * 1966-03-11 1967-05-19 Commissariat Energie Atomique Procédé de production, d'accélération et d'interaction de faisceaux de particules chargées et dispositif de mise en oeuvre dudit procédé
FR1506297A (fr) * 1966-03-11 1967-12-22 Commissariat Energie Atomique Procédé de production et de confinement de gaz ionisé et dispositifs en faisant application
FR2147497A5 (OSRAM) * 1971-07-29 1973-03-09 Commissariat Energie Atomique
US3778658A (en) * 1972-09-01 1973-12-11 Gen Electric Multibeam cathode ray tube utilizing d.a.m. grid
JPS5245639B2 (OSRAM) * 1973-09-24 1977-11-17
US3898496A (en) * 1974-08-12 1975-08-05 Us Energy Means for obtaining a metal ion beam from a heavy-ion cyclotron source
JPS598959B2 (ja) * 1975-06-02 1984-02-28 株式会社日立製作所 多重同軸型マイクロ波イオン源
US4045677A (en) * 1976-06-11 1977-08-30 Cornell Research Foundation, Inc. Intense ion beam generator
JPS537199A (en) * 1976-07-09 1978-01-23 Rikagaku Kenkyusho Plasma generator
US4206383A (en) * 1978-09-11 1980-06-03 California Institute Of Technology Miniature cyclotron resonance ion source using small permanent magnet

Also Published As

Publication number Publication date
FR2475798A1 (fr) 1981-08-14
GB2069230B (en) 1984-03-14
GB2069230A (en) 1981-08-19
JPS56128600A (en) 1981-10-08
US4417178A (en) 1983-11-22
DE3104461A1 (de) 1982-02-18
FR2475798B1 (OSRAM) 1982-09-03

Similar Documents

Publication Publication Date Title
JPH0341934B2 (OSRAM)
JP2776855B2 (ja) 高周波イオン源
US5859428A (en) Beam generator
US8624502B2 (en) Particle beam source apparatus, system and method
KR940010844B1 (ko) 이온 원(源)
JPH0732072B2 (ja) プラズマ励起装置および方法ならびにプラズマ発生装置
US5266146A (en) Microwave-powered plasma-generating apparatus and method
EP0462209A4 (en) Electron cyclotron resonance plasma source and method of operation
JPS62229641A (ja) 電子サイクロトロン共振イオン源
JPH08279400A (ja) マイクロ波分配装置およびプラズマ発生装置
Meyer The ORNL ECR multicharged ion source
JPS61118938A (ja) 超高周波イオン源点弧方法および装置
US4757237A (en) Electron cyclotron resonance negative ion source
KR920003157B1 (ko) PIG(Penning Ionization Gause)형의 이온원
JPH0589792A (ja) サイクロトロン共鳴機能を備えたイオン源
JP5715562B2 (ja) 電子サイクロトロン共鳴イオン・ゼネレータ
JP2008128887A (ja) プラズマ源，それを用いた高周波イオン源，負イオン源，イオンビーム処理装置，核融合用中性粒子ビーム入射装置
JPS6386864A (ja) イオン源
Shigemizu et al. Development of coaxial ECR plasma source for tube inner coating
JP3010059B2 (ja) イオン源
RU2810726C1 (ru) Сильноточный непрерывный источник ионных пучков на основе плазмы электронно-циклотронного резонансного разряда, удерживаемой в открытой магнитной ловушке
JP3045619B2 (ja) プラズマ発生装置
JPH04304630A (ja) マイクロ波プラズマ生成装置
Dudnikov Transport of High Brightness Negative Ion Beams
JPH06101308B2 (ja) マイクロ波プラズマ処理装置