JPH0340955B2 - - Google Patents

Info

Publication number
JPH0340955B2
JPH0340955B2 JP57163889A JP16388982A JPH0340955B2 JP H0340955 B2 JPH0340955 B2 JP H0340955B2 JP 57163889 A JP57163889 A JP 57163889A JP 16388982 A JP16388982 A JP 16388982A JP H0340955 B2 JPH0340955 B2 JP H0340955B2
Authority
JP
Japan
Prior art keywords
region
film
semiconductor
well region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57163889A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5954260A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57163889A priority Critical patent/JPS5954260A/ja
Publication of JPS5954260A publication Critical patent/JPS5954260A/ja
Publication of JPH0340955B2 publication Critical patent/JPH0340955B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP57163889A 1982-09-22 1982-09-22 半導体記憶装置およびその製造方法 Granted JPS5954260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57163889A JPS5954260A (ja) 1982-09-22 1982-09-22 半導体記憶装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163889A JPS5954260A (ja) 1982-09-22 1982-09-22 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS5954260A JPS5954260A (ja) 1984-03-29
JPH0340955B2 true JPH0340955B2 (enrdf_load_stackoverflow) 1991-06-20

Family

ID=15782722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57163889A Granted JPS5954260A (ja) 1982-09-22 1982-09-22 半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS5954260A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197961A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 半導体集積回路装置の製造方法
JPS61100958A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体メモリ集積回路装置
JPH0666444B2 (ja) * 1984-12-28 1994-08-24 日本電気株式会社 半導体装置の製造方法
US5148255A (en) * 1985-09-25 1992-09-15 Hitachi, Ltd. Semiconductor memory device
JP2702909B2 (ja) * 1986-04-23 1998-01-26 株式会社日立製作所 半導体集積回路装置
JPH0821681B2 (ja) * 1986-06-18 1996-03-04 株式会社日立製作所 半導体集積回路装置の製造方法
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
JP3266644B2 (ja) * 1991-04-08 2002-03-18 テキサス インスツルメンツ インコーポレイテツド ゲートアレイ装置
US5264385A (en) * 1991-12-09 1993-11-23 Texas Instruments Incorporated SRAM design with no moat-to-moat spacing

Also Published As

Publication number Publication date
JPS5954260A (ja) 1984-03-29

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