JPH0340107B2 - - Google Patents

Info

Publication number
JPH0340107B2
JPH0340107B2 JP57184172A JP18417282A JPH0340107B2 JP H0340107 B2 JPH0340107 B2 JP H0340107B2 JP 57184172 A JP57184172 A JP 57184172A JP 18417282 A JP18417282 A JP 18417282A JP H0340107 B2 JPH0340107 B2 JP H0340107B2
Authority
JP
Japan
Prior art keywords
base material
plasma
coating
chamber
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57184172A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5973045A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18417282A priority Critical patent/JPS5973045A/ja
Publication of JPS5973045A publication Critical patent/JPS5973045A/ja
Publication of JPH0340107B2 publication Critical patent/JPH0340107B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP18417282A 1982-10-19 1982-10-19 表面被覆方法 Granted JPS5973045A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18417282A JPS5973045A (ja) 1982-10-19 1982-10-19 表面被覆方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18417282A JPS5973045A (ja) 1982-10-19 1982-10-19 表面被覆方法

Publications (2)

Publication Number Publication Date
JPS5973045A JPS5973045A (ja) 1984-04-25
JPH0340107B2 true JPH0340107B2 (enrdf_load_stackoverflow) 1991-06-17

Family

ID=16148619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18417282A Granted JPS5973045A (ja) 1982-10-19 1982-10-19 表面被覆方法

Country Status (1)

Country Link
JP (1) JPS5973045A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157274A (ja) * 1983-02-25 1984-09-06 Agency Of Ind Science & Technol イオンビ−ムを用いたパタ−ン形成法
JPS61119676A (ja) * 1984-11-15 1986-06-06 Ulvac Corp シ−トプラズマとレ−ザ光を利用した成膜装置
JPH01301865A (ja) * 1988-05-30 1989-12-06 Nippon Telegr & Teleph Corp <Ntt> 薄膜成長方法および薄膜成長装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249776B2 (enrdf_load_stackoverflow) * 1973-08-29 1977-12-20
JPS5266884A (en) * 1975-12-01 1977-06-02 Nippon Telegr & Teleph Corp <Ntt> Process for forming film on base material
JPS5558362A (en) * 1978-10-26 1980-05-01 Matsushita Electric Ind Co Ltd Preparation of thin film
JPS56124229A (en) * 1980-03-05 1981-09-29 Matsushita Electric Ind Co Ltd Manufacture of thin film
JPS5721669U (enrdf_load_stackoverflow) * 1980-07-11 1982-02-04

Also Published As

Publication number Publication date
JPS5973045A (ja) 1984-04-25

Similar Documents

Publication Publication Date Title
US5403399A (en) Method and apparatus for vapor deposition of diamond
EP0439135B1 (en) Method for producing boron nitride film
US4816286A (en) Process for synthesis of diamond by CVD
JP2589033B2 (ja) レーザ補助による化学蒸着法
WO1999059759A3 (en) Low work function surface layers produced by laser ablation using short-wavelength photons
US5108543A (en) Method of surface treatment
RU2032765C1 (ru) Способ нанесения алмазного покрытия из паровой фазы и устройство для его осуществления
JPH0340107B2 (enrdf_load_stackoverflow)
US5286533A (en) Method of making hard boron nitride by a plasma CVD method employing beam irradiation
CN1060316A (zh) 汽相淀积金刚石的方法及装置
KR930005010B1 (ko) 마이크로파 증강 cvd장치 및 방법
CN1390977A (zh) 一种常温下制备化合物薄膜的方法
JP2947036B2 (ja) 気相成長ダイヤモンドの製造装置
JPH0857753A (ja) ダイヤモンドの加工方法および加工装置
JPH01201481A (ja) 高圧相窒化ほう素の気相合成方法及び装置
JP2633640B2 (ja) ダイヤモンドの気相合成方法
JP2748781B2 (ja) シリコン膜の形成方法
JPH11241168A (ja) 表面処理装置並びにアーク放電による表面処理装置および方法
JPS62290120A (ja) 多結晶半導体膜の単結晶化方法
JPH06279184A (ja) ダイヤモンドの気相合成方法
JP2995339B2 (ja) 薄膜の作成方法
JP3712442B2 (ja) レーザアブレーション成膜装置
JP2001081563A (ja) エルビウム添加水素化アモルファスシリコン薄膜の製造方法
KR100377476B1 (ko) 레이저 분자선 에피택시 장치 및 이를 이용한 산화물 박막 제조방법
JP3152548B2 (ja) 高周波誘導プラズマ成膜装置