JPH0339040B2 - - Google Patents

Info

Publication number
JPH0339040B2
JPH0339040B2 JP19260381A JP19260381A JPH0339040B2 JP H0339040 B2 JPH0339040 B2 JP H0339040B2 JP 19260381 A JP19260381 A JP 19260381A JP 19260381 A JP19260381 A JP 19260381A JP H0339040 B2 JPH0339040 B2 JP H0339040B2
Authority
JP
Japan
Prior art keywords
molecular beam
beam source
crystal growth
oven
source material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19260381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5895695A (ja
Inventor
Junji Saito
Hidetoshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19260381A priority Critical patent/JPS5895695A/ja
Publication of JPS5895695A publication Critical patent/JPS5895695A/ja
Publication of JPH0339040B2 publication Critical patent/JPH0339040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP19260381A 1981-11-30 1981-11-30 分子線結晶成長装置 Granted JPS5895695A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19260381A JPS5895695A (ja) 1981-11-30 1981-11-30 分子線結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19260381A JPS5895695A (ja) 1981-11-30 1981-11-30 分子線結晶成長装置

Publications (2)

Publication Number Publication Date
JPS5895695A JPS5895695A (ja) 1983-06-07
JPH0339040B2 true JPH0339040B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-06-12

Family

ID=16294005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19260381A Granted JPS5895695A (ja) 1981-11-30 1981-11-30 分子線結晶成長装置

Country Status (1)

Country Link
JP (1) JPS5895695A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653635B2 (ja) * 1985-05-14 1994-07-20 日本電信電話株式会社 分子線エピタキシャル成長法
JPH0524974A (ja) * 1991-10-22 1993-02-02 Nec Corp 分子線結晶成長装置
JPH0888175A (ja) * 1994-09-14 1996-04-02 Sony Corp 分子線エピタキシャル成長装置および光半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5895695A (ja) 1983-06-07

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