JPH035050B2 - - Google Patents

Info

Publication number
JPH035050B2
JPH035050B2 JP3080585A JP3080585A JPH035050B2 JP H035050 B2 JPH035050 B2 JP H035050B2 JP 3080585 A JP3080585 A JP 3080585A JP 3080585 A JP3080585 A JP 3080585A JP H035050 B2 JPH035050 B2 JP H035050B2
Authority
JP
Japan
Prior art keywords
hydrogen
molecular beam
beam source
crucible
shielding plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3080585A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61189622A (ja
Inventor
Takuji Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3080585A priority Critical patent/JPS61189622A/ja
Publication of JPS61189622A publication Critical patent/JPS61189622A/ja
Publication of JPH035050B2 publication Critical patent/JPH035050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP3080585A 1985-02-19 1985-02-19 分子線エピタキシ装置 Granted JPS61189622A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3080585A JPS61189622A (ja) 1985-02-19 1985-02-19 分子線エピタキシ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3080585A JPS61189622A (ja) 1985-02-19 1985-02-19 分子線エピタキシ装置

Publications (2)

Publication Number Publication Date
JPS61189622A JPS61189622A (ja) 1986-08-23
JPH035050B2 true JPH035050B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-24

Family

ID=12313895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3080585A Granted JPS61189622A (ja) 1985-02-19 1985-02-19 分子線エピタキシ装置

Country Status (1)

Country Link
JP (1) JPS61189622A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653635B2 (ja) * 1985-05-14 1994-07-20 日本電信電話株式会社 分子線エピタキシャル成長法
JP2007201348A (ja) * 2006-01-30 2007-08-09 Epiquest:Kk パージセル

Also Published As

Publication number Publication date
JPS61189622A (ja) 1986-08-23

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