JPH039076B2 - - Google Patents

Info

Publication number
JPH039076B2
JPH039076B2 JP56192600A JP19260081A JPH039076B2 JP H039076 B2 JPH039076 B2 JP H039076B2 JP 56192600 A JP56192600 A JP 56192600A JP 19260081 A JP19260081 A JP 19260081A JP H039076 B2 JPH039076 B2 JP H039076B2
Authority
JP
Japan
Prior art keywords
molecular beam
crystal growth
beam source
substrate
ultra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56192600A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5895694A (ja
Inventor
Junji Saito
Hidetoshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19260081A priority Critical patent/JPS5895694A/ja
Publication of JPS5895694A publication Critical patent/JPS5895694A/ja
Publication of JPH039076B2 publication Critical patent/JPH039076B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP19260081A 1981-11-30 1981-11-30 分子線結晶成長方法 Granted JPS5895694A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19260081A JPS5895694A (ja) 1981-11-30 1981-11-30 分子線結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19260081A JPS5895694A (ja) 1981-11-30 1981-11-30 分子線結晶成長方法

Publications (2)

Publication Number Publication Date
JPS5895694A JPS5895694A (ja) 1983-06-07
JPH039076B2 true JPH039076B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-02-07

Family

ID=16293956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19260081A Granted JPS5895694A (ja) 1981-11-30 1981-11-30 分子線結晶成長方法

Country Status (1)

Country Link
JP (1) JPS5895694A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589795B2 (ja) * 1976-06-23 1983-02-22 松下電器産業株式会社 分子線結晶成長方法

Also Published As

Publication number Publication date
JPS5895694A (ja) 1983-06-07

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