JPH0338736B2 - - Google Patents

Info

Publication number
JPH0338736B2
JPH0338736B2 JP56133670A JP13367081A JPH0338736B2 JP H0338736 B2 JPH0338736 B2 JP H0338736B2 JP 56133670 A JP56133670 A JP 56133670A JP 13367081 A JP13367081 A JP 13367081A JP H0338736 B2 JPH0338736 B2 JP H0338736B2
Authority
JP
Japan
Prior art keywords
substrate
liquid phase
epitaxial growth
container
liquid reservoir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56133670A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5834925A (ja
Inventor
Michiharu Ito
Mitsuo Yoshikawa
Shigeki Hamashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56133670A priority Critical patent/JPS5834925A/ja
Publication of JPS5834925A publication Critical patent/JPS5834925A/ja
Publication of JPH0338736B2 publication Critical patent/JPH0338736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2917—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56133670A 1981-08-25 1981-08-25 液相エピタキシヤル成長装置 Granted JPS5834925A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56133670A JPS5834925A (ja) 1981-08-25 1981-08-25 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56133670A JPS5834925A (ja) 1981-08-25 1981-08-25 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5834925A JPS5834925A (ja) 1983-03-01
JPH0338736B2 true JPH0338736B2 (enExample) 1991-06-11

Family

ID=15110157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56133670A Granted JPS5834925A (ja) 1981-08-25 1981-08-25 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5834925A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194516A (en) * 1981-05-26 1982-11-30 Toyo Aluminium Kk Aluminum foil for electrolytic condenser
US6855408B2 (en) 2002-01-25 2005-02-15 Showa Denko K.K. Composite metal material and method for manufacturing the same, etched metal material and method for manufacturing the same and electrolytic capacitor
JP7103645B2 (ja) 2016-06-14 2022-07-20 ロドニー フラック，ダリル 顎クラッシュゾーンを有するヘルメット及び一体式換気

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144271A (en) * 1976-05-27 1977-12-01 Toshiba Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS5834925A (ja) 1983-03-01

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