JPH0338345B2 - - Google Patents

Info

Publication number
JPH0338345B2
JPH0338345B2 JP62155530A JP15553087A JPH0338345B2 JP H0338345 B2 JPH0338345 B2 JP H0338345B2 JP 62155530 A JP62155530 A JP 62155530A JP 15553087 A JP15553087 A JP 15553087A JP H0338345 B2 JPH0338345 B2 JP H0338345B2
Authority
JP
Japan
Prior art keywords
electrode
current density
discharge
uniformity
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62155530A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644481A (en
Inventor
Minoru Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15553087A priority Critical patent/JPS644481A/ja
Publication of JPS644481A publication Critical patent/JPS644481A/ja
Publication of JPH0338345B2 publication Critical patent/JPH0338345B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP15553087A 1987-06-24 1987-06-24 Parallel-plate discharge electrode Granted JPS644481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15553087A JPS644481A (en) 1987-06-24 1987-06-24 Parallel-plate discharge electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15553087A JPS644481A (en) 1987-06-24 1987-06-24 Parallel-plate discharge electrode

Publications (2)

Publication Number Publication Date
JPS644481A JPS644481A (en) 1989-01-09
JPH0338345B2 true JPH0338345B2 (enrdf_load_stackoverflow) 1991-06-10

Family

ID=15608084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15553087A Granted JPS644481A (en) 1987-06-24 1987-06-24 Parallel-plate discharge electrode

Country Status (1)

Country Link
JP (1) JPS644481A (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266941A (ja) * 1988-08-31 1990-03-07 Nec Corp エッチング装置
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
WO2000034979A1 (en) * 1998-12-07 2000-06-15 E.I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
US6528947B1 (en) 1999-12-06 2003-03-04 E. I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
JP4717186B2 (ja) * 2000-07-25 2011-07-06 株式会社アルバック スパッタリング装置
JP4472372B2 (ja) * 2003-02-03 2010-06-02 株式会社オクテック プラズマ処理装置及びプラズマ処理装置用の電極板
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
CN101871099B (zh) * 2004-07-12 2013-09-25 应用材料公司 通过气体分散器弯曲性的等离子体均匀度控制
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
KR101092879B1 (ko) * 2009-04-06 2011-12-12 한국과학기술원 기판 처리 장치, 기판 처리 방법, 예비 전극 구조체, 측정 전극 구조체, 및 공정 전극 구조체
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
DE102010030608B4 (de) * 2010-06-28 2012-04-05 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur plasmagestützten Bearbeitung von Substraten
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
JP5702968B2 (ja) * 2010-08-11 2015-04-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ制御方法
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
JP7138551B2 (ja) * 2018-11-30 2022-09-16 株式会社アルバック スパッタリング方法及びスパッタリング装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624186B2 (ja) * 1985-09-27 1994-03-30 株式会社日立製作所 ドライエツチング装置

Also Published As

Publication number Publication date
JPS644481A (en) 1989-01-09

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