JPH0336309B2 - - Google Patents
Info
- Publication number
- JPH0336309B2 JPH0336309B2 JP59079683A JP7968384A JPH0336309B2 JP H0336309 B2 JPH0336309 B2 JP H0336309B2 JP 59079683 A JP59079683 A JP 59079683A JP 7968384 A JP7968384 A JP 7968384A JP H0336309 B2 JPH0336309 B2 JP H0336309B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon
- integrated circuit
- circuit device
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59079683A JPS60227461A (ja) | 1984-04-19 | 1984-04-19 | 半導体集積回路装置 |
| EP85302116A EP0164829B1 (en) | 1984-04-19 | 1985-03-26 | Semiconductor memory device and method of manufacturing the same |
| DE8585302116T DE3565339D1 (en) | 1984-04-19 | 1985-03-26 | Semiconductor memory device and method of manufacturing the same |
| US07/110,616 US4786954A (en) | 1984-04-19 | 1987-10-19 | Dynamic ram cell with trench surrounded switching element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59079683A JPS60227461A (ja) | 1984-04-19 | 1984-04-19 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60227461A JPS60227461A (ja) | 1985-11-12 |
| JPH0336309B2 true JPH0336309B2 (OSRAM) | 1991-05-31 |
Family
ID=13696998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59079683A Granted JPS60227461A (ja) | 1984-04-19 | 1984-04-19 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60227461A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
| JPS61108163A (ja) * | 1984-11-01 | 1986-05-26 | Nec Corp | 半導体記憶装置の製造方法 |
| JPS62145864A (ja) * | 1985-12-20 | 1987-06-29 | Nec Corp | ダイナミツク型半導体記憶装置の記憶素子構造および製造方法 |
| JP2681887B2 (ja) * | 1987-03-06 | 1997-11-26 | シ−メンス、アクチエンゲゼルシヤフト | ３次元１トランジスタメモリセル構造とその製法 |
| JPS645052A (en) * | 1987-06-29 | 1989-01-10 | Mitsubishi Electric Corp | Capacitor cell of semiconductor storage device |
-
1984
- 1984-04-19 JP JP59079683A patent/JPS60227461A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60227461A (ja) | 1985-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4786954A (en) | Dynamic ram cell with trench surrounded switching element | |
| KR900000207B1 (ko) | 반도체 기억장치와 그 제조방법 | |
| US4742018A (en) | Process for producing memory cell having stacked capacitor | |
| US5023683A (en) | Semiconductor memory device with pillar-shaped insulating film | |
| KR910010167B1 (ko) | 스택 캐패시터 dram셀 및 그의 제조방법 | |
| KR0163759B1 (ko) | 반도체장치 및 반도체기억장치 | |
| US5144579A (en) | Semiconductor memory device and its fabricating method | |
| US5323038A (en) | Array of finned memory cell capacitors on a semiconductor substrate | |
| JPH0365905B2 (OSRAM) | ||
| JPH0326547B2 (OSRAM) | ||
| KR920001635B1 (ko) | 반도체기억장치 및 그 제조방법 | |
| JPH0793368B2 (ja) | 半導体記憶装置の製造方法 | |
| JPH0336309B2 (OSRAM) | ||
| JPH0793366B2 (ja) | 半導体メモリおよびその製造方法 | |
| US6355517B1 (en) | Method for fabricating semiconductor memory with a groove | |
| EP0457131A1 (en) | Method of manufacturing semiconductor memory device having stacked capacitor cells | |
| JP2739965B2 (ja) | 半導体記憶装置およびその製造方法 | |
| JPS5986241A (ja) | 半導体装置及びその製造方法 | |
| JPS61107768A (ja) | 半導体記憶装置 | |
| JP2661156B2 (ja) | 半導体メモリ装置 | |
| US4482908A (en) | High capacity memory cell having a charge transfer channel covered by a stepped insulating layer | |
| KR940009613B1 (ko) | 반도체 메모리 장치의 제조방법 및 그 구조 | |
| JP2529781B2 (ja) | 垂直トランジスタ―を有するスタック−トレンチ構造のｄｒａｍセルおよびその製造方法 | |
| KR960001952B1 (ko) | 스택형 트렌치 캐패시터의 제조방법 | |
| US6204528B1 (en) | Dynamic random access memory structure |