JPH0336293B2 - - Google Patents
Info
- Publication number
- JPH0336293B2 JPH0336293B2 JP57172010A JP17201082A JPH0336293B2 JP H0336293 B2 JPH0336293 B2 JP H0336293B2 JP 57172010 A JP57172010 A JP 57172010A JP 17201082 A JP17201082 A JP 17201082A JP H0336293 B2 JPH0336293 B2 JP H0336293B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- exposure
- exposure pattern
- electron beam
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172010A JPS5961131A (ja) | 1982-09-30 | 1982-09-30 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172010A JPS5961131A (ja) | 1982-09-30 | 1982-09-30 | 電子ビ−ム露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961131A JPS5961131A (ja) | 1984-04-07 |
| JPH0336293B2 true JPH0336293B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-05-31 |
Family
ID=15933847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57172010A Granted JPS5961131A (ja) | 1982-09-30 | 1982-09-30 | 電子ビ−ム露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961131A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61183926A (ja) * | 1985-02-08 | 1986-08-16 | Toshiba Corp | 荷電ビ−ム照射装置 |
| US5393634A (en) * | 1993-05-27 | 1995-02-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Continuous phase and amplitude holographic elements |
| JP5182641B2 (ja) * | 2008-12-01 | 2013-04-17 | 凸版印刷株式会社 | フォトマスクのパターンデータ生成方法、フォトマスクのパターンデータ生成装置、およびプログラム |
-
1982
- 1982-09-30 JP JP57172010A patent/JPS5961131A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961131A (ja) | 1984-04-07 |