JPH0336154U - - Google Patents
Info
- Publication number
- JPH0336154U JPH0336154U JP9670189U JP9670189U JPH0336154U JP H0336154 U JPH0336154 U JP H0336154U JP 9670189 U JP9670189 U JP 9670189U JP 9670189 U JP9670189 U JP 9670189U JP H0336154 U JPH0336154 U JP H0336154U
- Authority
- JP
- Japan
- Prior art keywords
- region
- source region
- conductivity type
- static induction
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 claims 2
- 230000003068 static effect Effects 0.000 claims 2
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の一実施例による埋込ゲート型
ＳＩＴを概略的に示し、ａは平面図、ｂはａに於
るＢ−Ｂ′断面図、ｃはａの於るＣ−Ｃ′断面図
である。第２図は第１図ａに於る破線丸内領域Ｘ
の要部のみの拡大図である。第３図は従来の高周
波向け埋込みゲート型ＳＩＴを示し、ａは平面図
、ｂはａに於るＢ−Ｂ′断面図、ｃはａに於るＣ
−Ｃ′断面図である。第４図は第３図ａに於る破
線丸内領域Ｙの要部のみの拡大図である。
１……ソース領域Ｓ１〜Ｓ８、２……埋込みゲー
ト、２′……ゲート電極、３……ドレイン領域、
４……チヤンネル。
FIG. 1 schematically shows a buried gate type SIT according to an embodiment of the present invention, in which a is a plan view, b is a sectional view taken along line B-B' at point a, and c is a cross-sectional view taken along line C-C' at point a. FIG. Figure 2 shows the region X within the dotted line in Figure 1 a.
This is an enlarged view of only the main parts. Figure 3 shows a conventional buried gate type SIT for high frequencies, where a is a plan view, b is a cross-sectional view taken along line B-B' in a, and c is a cross-sectional view taken along line C in a.
-C' sectional view. FIG. 4 is an enlarged view of only the main part of the region Y circled by the broken line in FIG. 3a. 1... Source regions S1 to S8, 2... Buried gate, 2'... Gate electrode, 3... Drain region,
4... Channel.
Claims (1)
れとは逆の導電型のゲート領域とから成る静電誘
導型トランジスタに於て、個々に分離されたソー
ス領域を、該ソース領域と長くとも同等のゲート
長さを有する接続用の小ソースによつて互いに並
列に接続させたことを特徴とする静電誘導型トラ
ンジスタ。 In a static induction transistor consisting of a source region and a drain region of one conductivity type and a gate region of the opposite conductivity type, each separated source region is connected to a gate region at least as long as the source region. Static induction type transistors, characterized in that they are connected in parallel to each other by small connecting sources having a length.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989096701U JPH087646Y2 (en) | 1989-08-21 | 1989-08-21 | Static induction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989096701U JPH087646Y2 (en) | 1989-08-21 | 1989-08-21 | Static induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0336154U true JPH0336154U (en) | 1991-04-09 |
| JPH087646Y2 JPH087646Y2 (en) | 1996-03-04 |
Family
ID=31645888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989096701U Expired - Fee Related JPH087646Y2 (en) | 1989-08-21 | 1989-08-21 | Static induction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087646Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0191463A (en) * | 1987-10-02 | 1989-04-11 | Toyota Autom Loom Works Ltd | High breakdown voltage semiconductor element and its manufacture |
-
1989
- 1989-08-21 JP JP1989096701U patent/JPH087646Y2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0191463A (en) * | 1987-10-02 | 1989-04-11 | Toyota Autom Loom Works Ltd | High breakdown voltage semiconductor element and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH087646Y2 (en) | 1996-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62196360U (en) | ||
| JPH0336154U (en) | ||
| JPS6178315U (en) | ||
| JPH0359650U (en) | ||
| JPH0438065U (en) | ||
| JPH0373468U (en) | ||
| JPS58180647U (en) | Junction field effect transistor | |
| JPH0346216U (en) | ||
| JPH0396052U (en) | ||
| JPS6186953U (en) | ||
| JPH0338878A (en) | Dual gate type insulated gate field effect transistor | |
| JPS6448054U (en) | ||
| JPS642454U (en) | ||
| JPS63188963U (en) | ||
| JPS62186446U (en) | ||
| JPS6397252U (en) | ||
| JPS642455U (en) | ||
| JPS62181027U (en) | ||
| JPS62124863U (en) | ||
| JPS625660U (en) | ||
| JPH01116445U (en) | ||
| JPH0316358U (en) | ||
| JPH03128935U (en) | ||
| JPS62120368U (en) | ||
| JPS62168662U (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |