JPS642454U - - Google Patents
Info
- Publication number
- JPS642454U JPS642454U JP9670687U JP9670687U JPS642454U JP S642454 U JPS642454 U JP S642454U JP 9670687 U JP9670687 U JP 9670687U JP 9670687 U JP9670687 U JP 9670687U JP S642454 U JPS642454 U JP S642454U
- Authority
- JP
- Japan
- Prior art keywords
- region
- curvature
- semicircular arc
- channel region
- drift channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案にかかる半導体装置の一実施例
の構成図、第２図は従来における半導体装置の一
例の構成図である。
１……基板、３……ソース領域、８……ゲート
電極、１０……ドレイン領域、１１……ドリフト
チヤネル領域、１１１，１１２……曲線部、１１
３，１１４……直線部。
FIG. 1 is a block diagram of an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a block diagram of an example of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1...Substrate, 3...Source region, 8...Gate electrode, 10...Drain region, 11...Drift channel region, 11 1 , 11 2 ...Curved part, 11
3 , 11 4 ...Straight line part.
Claims (1)
曲率が等しい２つの半円弧部を直線部でつないだ
通常のレーストラツク形状に、内側から、低不純
物濃度のドリフトチヤネル領域、ゲート領域及び
ソース領域を形成してＭＯＳ ＦＥＴを構成した
半導体装置において、 前記半円弧部と接合しているドレイン領域の曲
率を、前記通常のレーストラツク形状の半円弧部
の曲率よりも小さくし、曲線部のドリフトチヤネ
ル領域の幅を直線部のドリフトチヤネル領域の幅
よりも大きくしたことを特徴とする半導体装置。[Claims for Utility Model Registration] Around the drain region,
In a semiconductor device in which a MOS FET is constructed by forming a low impurity concentration drift channel region, a gate region, and a source region from the inside in a normal race track shape in which two semicircular arc parts with equal curvature are connected by a straight part, The curvature of the drain region connected to the semicircular arc portion is made smaller than the curvature of the semicircular arc portion of the normal race track shape, and the width of the drift channel region of the curved portion is made smaller than the width of the drift channel region of the straight portion. A semiconductor device characterized by having a larger size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9670687U JPS642454U (en) | 1987-06-24 | 1987-06-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9670687U JPS642454U (en) | 1987-06-24 | 1987-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS642454U true JPS642454U (en) | 1989-01-09 |
Family
ID=31321779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9670687U Pending JPS642454U (en) | 1987-06-24 | 1987-06-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS642454U (en) |
-
1987
- 1987-06-24 JP JP9670687U patent/JPS642454U/ja active Pending
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