JPS63188963U - - Google Patents
Info
- Publication number
- JPS63188963U JPS63188963U JP7888487U JP7888487U JPS63188963U JP S63188963 U JPS63188963 U JP S63188963U JP 7888487 U JP7888487 U JP 7888487U JP 7888487 U JP7888487 U JP 7888487U JP S63188963 U JPS63188963 U JP S63188963U
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- high voltage
- voltage mos
- transistor
- double diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 1
Description
第１図ａ，ｂはこの考案の一実施例の構造を示
す平面図、断面図、第２図ａ，ｂは従来のこの種
高耐圧ＭＯＳトランジスタの一例の構造を示す平
面図、断面図である。
１……Ｎ−基板、２……Ｐ＋ドレイン領域、３
……Ｐ＋ソース領域、４……絶縁膜、５……ゲー
ト電極、６……ドレイン電極、７……ソース電極
、８ａ……Ｐ−低濃度拡散層。なお、図中同一符
号は同一または相当する部分を示す。
1A and 1B are a plan view and a sectional view showing the structure of an embodiment of this invention, and FIGS. 2A and 2B are a plan view and a sectional view showing the structure of an example of a conventional high-voltage MOS transistor of this type. be. 1...N - substrate, 2...P + drain region, 3
...P + source region, 4...insulating film, 5...gate electrode, 6...drain electrode, 7...source electrode, 8a...P - low concentration diffusion layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
る高耐圧ＭＯＳトランジスタにおいて、ドレイン
領域のチヤンネル領域側にのみ二重拡散による低
濃度拡散層を形成したことを特徴とする高耐圧Ｍ
ＯＳトランジスタ。 In a high voltage MOS transistor in which the electrode region has a double diffusion structure to increase the voltage resistance, a high voltage MOS transistor is characterized in that a low concentration diffusion layer is formed by double diffusion only on the channel region side of the drain region.
OS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7888487U JPS63188963U (en) | 1987-05-27 | 1987-05-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7888487U JPS63188963U (en) | 1987-05-27 | 1987-05-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63188963U true JPS63188963U (en) | 1988-12-05 |
Family
ID=30928241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7888487U Pending JPS63188963U (en) | 1987-05-27 | 1987-05-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63188963U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117081A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Preparation of mis semiconductor device |
| JPS6016469A (en) * | 1984-04-13 | 1985-01-28 | Hitachi Ltd | Manufacture of mis semiconductor device |
-
1987
- 1987-05-27 JP JP7888487U patent/JPS63188963U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117081A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Preparation of mis semiconductor device |
| JPS6016469A (en) * | 1984-04-13 | 1985-01-28 | Hitachi Ltd | Manufacture of mis semiconductor device |