JPS52117081A - Preparation of mis semiconductor device - Google Patents
Preparation of mis semiconductor deviceInfo
- Publication number
- JPS52117081A JPS52117081A JP3363176A JP3363176A JPS52117081A JP S52117081 A JPS52117081 A JP S52117081A JP 3363176 A JP3363176 A JP 3363176A JP 3363176 A JP3363176 A JP 3363176A JP S52117081 A JPS52117081 A JP S52117081A
- Authority
- JP
- Japan
- Prior art keywords
- preparation
- semiconductor device
- mis semiconductor
- mis
- dimension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a high pressure-resistant MIS device which has a small area and introduces less variations in the dimension and electric characteristics of the element by forming a double diffusion type drain layers by self-matching.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3363176A JPS52117081A (en) | 1976-03-29 | 1976-03-29 | Preparation of mis semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3363176A JPS52117081A (en) | 1976-03-29 | 1976-03-29 | Preparation of mis semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7283584A Division JPS6016469A (en) | 1984-04-13 | 1984-04-13 | Manufacture of mis semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52117081A true JPS52117081A (en) | 1977-10-01 |
Family
ID=12391788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3363176A Pending JPS52117081A (en) | 1976-03-29 | 1976-03-29 | Preparation of mis semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52117081A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58219766A (en) * | 1982-06-14 | 1983-12-21 | Matsushita Electric Ind Co Ltd | Manufacture of mos type semiconductor device |
JPS63188963U (en) * | 1987-05-27 | 1988-12-05 | ||
JP2003510796A (en) * | 1998-09-02 | 2003-03-18 | ウルトラアールエフ インコーポレイテッド | Method of fabricating high power RF field effect transistor with reduced hot electron injection and structure resulting therefrom |
-
1976
- 1976-03-29 JP JP3363176A patent/JPS52117081A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58219766A (en) * | 1982-06-14 | 1983-12-21 | Matsushita Electric Ind Co Ltd | Manufacture of mos type semiconductor device |
JPS63188963U (en) * | 1987-05-27 | 1988-12-05 | ||
JP2003510796A (en) * | 1998-09-02 | 2003-03-18 | ウルトラアールエフ インコーポレイテッド | Method of fabricating high power RF field effect transistor with reduced hot electron injection and structure resulting therefrom |
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