JPS52117081A - Preparation of mis semiconductor device - Google Patents

Preparation of mis semiconductor device

Info

Publication number
JPS52117081A
JPS52117081A JP3363176A JP3363176A JPS52117081A JP S52117081 A JPS52117081 A JP S52117081A JP 3363176 A JP3363176 A JP 3363176A JP 3363176 A JP3363176 A JP 3363176A JP S52117081 A JPS52117081 A JP S52117081A
Authority
JP
Japan
Prior art keywords
preparation
semiconductor device
mis semiconductor
mis
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3363176A
Other languages
Japanese (ja)
Inventor
Tatsumi Shirasu
Norimasa Yasui
Minoru Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3363176A priority Critical patent/JPS52117081A/en
Publication of JPS52117081A publication Critical patent/JPS52117081A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high pressure-resistant MIS device which has a small area and introduces less variations in the dimension and electric characteristics of the element by forming a double diffusion type drain layers by self-matching.
COPYRIGHT: (C)1977,JPO&Japio
JP3363176A 1976-03-29 1976-03-29 Preparation of mis semiconductor device Pending JPS52117081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3363176A JPS52117081A (en) 1976-03-29 1976-03-29 Preparation of mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3363176A JPS52117081A (en) 1976-03-29 1976-03-29 Preparation of mis semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7283584A Division JPS6016469A (en) 1984-04-13 1984-04-13 Manufacture of mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS52117081A true JPS52117081A (en) 1977-10-01

Family

ID=12391788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3363176A Pending JPS52117081A (en) 1976-03-29 1976-03-29 Preparation of mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS52117081A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219766A (en) * 1982-06-14 1983-12-21 Matsushita Electric Ind Co Ltd Manufacture of mos type semiconductor device
JPS63188963U (en) * 1987-05-27 1988-12-05
JP2003510796A (en) * 1998-09-02 2003-03-18 ウルトラアールエフ インコーポレイテッド Method of fabricating high power RF field effect transistor with reduced hot electron injection and structure resulting therefrom

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219766A (en) * 1982-06-14 1983-12-21 Matsushita Electric Ind Co Ltd Manufacture of mos type semiconductor device
JPS63188963U (en) * 1987-05-27 1988-12-05
JP2003510796A (en) * 1998-09-02 2003-03-18 ウルトラアールエフ インコーポレイテッド Method of fabricating high power RF field effect transistor with reduced hot electron injection and structure resulting therefrom

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