JPS62181027U - - Google Patents
Info
- Publication number
- JPS62181027U JPS62181027U JP6834586U JP6834586U JPS62181027U JP S62181027 U JPS62181027 U JP S62181027U JP 6834586 U JP6834586 U JP 6834586U JP 6834586 U JP6834586 U JP 6834586U JP S62181027 U JPS62181027 U JP S62181027U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- microstrip circuit
- high frequency
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 5
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
Landscapes
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Description
第１図はこの考案の一実施例による高周波増幅
器を示す構成図、第２図はこの考案の他の実施例
を示す構成図、第３図は従来の高周波増幅器を示
す構成図である。
１はＦＥＴ、２はゲート端子、３はドレイン端
子、４はソース端子、５は第１のマイクロストリ
ツプ回路、６は第２のマイクロストリツプ回路、
７はキヤリア、８は第１の金ワイヤ、９は第２の
金ワイヤ、１０は金属ブロツク、１１は第３の金
ワイヤである。なお、図中、同一符号は同一、ま
たは相当部分を示す。
FIG. 1 is a block diagram showing a high frequency amplifier according to one embodiment of this invention, FIG. 2 is a block diagram showing another embodiment of this invention, and FIG. 3 is a block diagram showing a conventional high frequency amplifier. 1 is a FET, 2 is a gate terminal, 3 is a drain terminal, 4 is a source terminal, 5 is a first microstrip circuit, 6 is a second microstrip circuit,
7 is a carrier, 8 is a first gold wire, 9 is a second gold wire, 10 is a metal block, and 11 is a third gold wire. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
ジスタのゲート端子に接続される第１のマイクロ
ストリツプ回路と、前記電界効果トランジスタの
ドレイン端子に接続される第２のマイクロストリ
ツプ回路と、前記電界効果トランジスタと前記第
１のマイクロストリツプ回路と、前記第２のマイ
クロストリツプ回路が取付けられるキヤリアとで
構成される高周波増幅器において、前記キヤリア
に固定され、前記電界効果トランジスタのソース
端子に接続される金属ブロツクを備えたことを特
徴とする高周波増幅器。 a field effect transistor, a first microstrip circuit connected to the gate terminal of the field effect transistor, a second microstrip circuit connected to the drain terminal of the field effect transistor, and the field effect transistor. In a high frequency amplifier comprising a transistor, the first microstrip circuit, and a carrier to which the second microstrip circuit is attached, the amplifier is fixed to the carrier and connected to the source terminal of the field effect transistor. A high frequency amplifier characterized by comprising a metal block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6834586U JPS62181027U (en) | 1986-05-07 | 1986-05-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6834586U JPS62181027U (en) | 1986-05-07 | 1986-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62181027U true JPS62181027U (en) | 1987-11-17 |
Family
ID=30908072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6834586U Pending JPS62181027U (en) | 1986-05-07 | 1986-05-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62181027U (en) |
-
1986
- 1986-05-07 JP JP6834586U patent/JPS62181027U/ja active Pending
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