JPS6374819U - - Google Patents
Info
- Publication number
- JPS6374819U JPS6374819U JP16990686U JP16990686U JPS6374819U JP S6374819 U JPS6374819 U JP S6374819U JP 16990686 U JP16990686 U JP 16990686U JP 16990686 U JP16990686 U JP 16990686U JP S6374819 U JPS6374819 U JP S6374819U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- microstrip circuit
- high frequency
- frequency amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Microwave Amplifiers (AREA)
Description
第1図はこの考案の一実施例による高周波増幅
器を示す構成図、第2図はこの実施例のうちFE
Tと金属ブロツクの接続状態を示す詳細図、第3
図は従来の高周波増幅器を示す構成である。
1はFET、2はゲート端子、3はドレイン端
子、4はソース端子、5は第1のマイクロストリ
ツプ回路、6は第2のマイクロストリツプ回路、
7はキヤリア、8は金属ブロツク、9は第1の金
ワイヤ、10は第2の金ワイヤ、11は第3の金
ワイヤ、12は第4の金ワイヤである。なお、図
中、同一符号は同一、または相当部分を示す。
Fig. 1 is a block diagram showing a high frequency amplifier according to an embodiment of this invention, and Fig. 2 is a block diagram showing the FE of this embodiment.
Detailed diagram showing the connection state of T and metal block, 3rd
The figure shows the configuration of a conventional high frequency amplifier. 1 is a FET, 2 is a gate terminal, 3 is a drain terminal, 4 is a source terminal, 5 is a first microstrip circuit, 6 is a second microstrip circuit,
7 is a carrier, 8 is a metal block, 9 is a first gold wire, 10 is a second gold wire, 11 is a third gold wire, and 12 is a fourth gold wire. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
ジスタのゲート端子に接続される第1のマイクロ
ストリツプ回路と、前記電界効果トランジスタの
ドレイン端子に接続される第2のマイクロストリ
ツプ回路と、前記第1のマイクロストリツプ回路
と前記第2のマイクロストリツプ回路が取付けら
れるキヤリアとで構成される高周波増幅器におい
て、前記電界効果トランジスタを保持し、前記電
界効果トランジスタのソース端子に接続され、前
記キヤリアに取付けられる金属ブロツクを備えた
ことを特徴とする高周波増幅器。 a field effect transistor; a first microstrip circuit connected to the gate terminal of the field effect transistor; a second microstrip circuit connected to the drain terminal of the field effect transistor; A high frequency amplifier comprising a microstrip circuit and a carrier to which the second microstrip circuit is attached, which holds the field effect transistor, is connected to the source terminal of the field effect transistor, and is connected to the carrier. A high frequency amplifier characterized in that it is equipped with a metal block that is attached to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16990686U JPS6374819U (en) | 1986-11-05 | 1986-11-05 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16990686U JPS6374819U (en) | 1986-11-05 | 1986-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6374819U true JPS6374819U (en) | 1988-05-18 |
Family
ID=31104141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16990686U Pending JPS6374819U (en) | 1986-11-05 | 1986-11-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6374819U (en) |
-
1986
- 1986-11-05 JP JP16990686U patent/JPS6374819U/ja active Pending
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