JPS5984933U - level shift circuit - Google Patents
level shift circuitInfo
- Publication number
- JPS5984933U JPS5984933U JP17115283U JP17115283U JPS5984933U JP S5984933 U JPS5984933 U JP S5984933U JP 17115283 U JP17115283 U JP 17115283U JP 17115283 U JP17115283 U JP 17115283U JP S5984933 U JPS5984933 U JP S5984933U
- Authority
- JP
- Japan
- Prior art keywords
- shift circuit
- level shift
- output terminal
- current
- constant current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
°第1図及び第2図は従来例の回路図、第3図は!
第2図従来例を集積回路装置として構成した場合の要部
平面図、第4図は本考案−実施例に於けるドレイン電流
を説明する為の線図、第5図は本考案−実施例の回路図
、第6図は第5図実施例の集積回路装置メして構成した
場合の要部平面図である。
図に於いて、Q工は駆動用トランジスタ、Q2は
′定電流源用トランジスタ、Aは入力端、Xは出力端
、Dはドレイン、Gはゲート、Sはソースである。°Figures 1 and 2 are circuit diagrams of the conventional example, and Figure 3 is! Fig. 2 is a plan view of essential parts when the conventional example is configured as an integrated circuit device, Fig. 4 is a diagram for explaining the drain current in the present invention-embodiment, and Fig. 5 is the present invention-embodiment. FIG. 6 is a plan view of a main part of the integrated circuit device according to the embodiment of FIG. 5. In the figure, Q is a driving transistor, and Q2 is
'A constant current source transistor, A is the input end, X is the output end, D is the drain, G is the gate, and S is the source.
Claims (1)
ートに加えられるデ!プレッション形電界効果トランジ
スタと、該出力端と低電位側の電源との間に接続された
定電流源とを備え、前記ディプレッション齢電界効果ト
ランジスタにその飽和ドレイン電流より大なる電流を流
すような値に前記定電流源の電流値を設定したことを゛
特徴とするレベル−シフト回路。A device that is connected between the high potential side power supply and the output terminal, and whose input is applied to the gate! a constant current source connected between the output terminal and a low-potential power source, the current being larger than the saturation drain current of the depletion-type field-effect transistor; A level shift circuit characterized in that the current value of the constant current source is set to .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17115283U JPS602681Y2 (en) | 1983-11-04 | 1983-11-04 | level shift circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17115283U JPS602681Y2 (en) | 1983-11-04 | 1983-11-04 | level shift circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5984933U true JPS5984933U (en) | 1984-06-08 |
JPS602681Y2 JPS602681Y2 (en) | 1985-01-25 |
Family
ID=30373427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17115283U Expired JPS602681Y2 (en) | 1983-11-04 | 1983-11-04 | level shift circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS602681Y2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015019386A (en) * | 2009-10-09 | 2015-01-29 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2016140065A (en) * | 2015-01-21 | 2016-08-04 | パナソニック株式会社 | Signal inversion device, power transmission device and negative voltage generating circuit |
-
1983
- 1983-11-04 JP JP17115283U patent/JPS602681Y2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015019386A (en) * | 2009-10-09 | 2015-01-29 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2016140065A (en) * | 2015-01-21 | 2016-08-04 | パナソニック株式会社 | Signal inversion device, power transmission device and negative voltage generating circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS602681Y2 (en) | 1985-01-25 |
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