JPS58526U - Switching transistor circuit device - Google Patents

Switching transistor circuit device

Info

Publication number
JPS58526U
JPS58526U JP9492081U JP9492081U JPS58526U JP S58526 U JPS58526 U JP S58526U JP 9492081 U JP9492081 U JP 9492081U JP 9492081 U JP9492081 U JP 9492081U JP S58526 U JPS58526 U JP S58526U
Authority
JP
Japan
Prior art keywords
circuit device
switching transistor
transistor circuit
transistor
darlington
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9492081U
Other languages
Japanese (ja)
Inventor
須貝　忠雄
和昭 芦沼
Original Assignee
スタンレー電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by スタンレー電気株式会社 filed Critical スタンレー電気株式会社
Priority to JP9492081U priority Critical patent/JPS58526U/en
Publication of JPS58526U publication Critical patent/JPS58526U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの考案装置の回路図、第２図は従来装置の回
路図である。 Ｑｌ・・・・・・電界効果トランジスタ、Ｑ１＋　Ｑ２
・・・・・・トランジスタ、Ｌ・・・・・・負荷、Ｅ・
・・・・・電源。FIG. 1 is a circuit diagram of this invented device, and FIG. 2 is a circuit diagram of a conventional device. Ql...Field effect transistor, Q1+Q2
...Transistor, L...Load, E.
·····power supply.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ダーリントン接続したトランジスタに高周波入力を供給
し、スイッチング作用を得るよう＆；シた装置において
、前記ダーリントン接続したトランジスタの入力側を電
界効果トランジスタとしたスイッチング用トランジスタ
回路装置。A switching transistor circuit device in which a high-frequency input is supplied to a Darlington-connected transistor to obtain a switching action, wherein the input side of the Darlington-connected transistor is a field effect transistor.
JP9492081U 1981-06-26 1981-06-26 Switching transistor circuit device Pending JPS58526U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9492081U JPS58526U (en) 1981-06-26 1981-06-26 Switching transistor circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9492081U JPS58526U (en) 1981-06-26 1981-06-26 Switching transistor circuit device

Publications (1)

Publication Number Publication Date
JPS58526U true JPS58526U (en) 1983-01-05

Family

ID=29889841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9492081U Pending JPS58526U (en) 1981-06-26 1981-06-26 Switching transistor circuit device

Country Status (1)

Country Link
JP (1) JPS58526U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279711A (en) * 1986-05-28 1987-12-04 Fuji Electric Co Ltd Composite semiconductor device
JPS6481520A (en) * 1987-09-24 1989-03-27 Toshiba Corp Darlington circuit
JP2015015715A (en) * 2013-07-05 2015-01-22 韓國電子通信研究院Ｅｌｅｃｔｒｏｎｉｃｓ ａｎｄ Ｔｅｌｅｃｏｍｍｕｎｉｃａｔｉｏｎｓ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ Metal-insulator transition transistor system including critical current supply element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154826A (en) * 1979-05-21 1980-12-02 Exxon Research Engineering Co Switching circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154826A (en) * 1979-05-21 1980-12-02 Exxon Research Engineering Co Switching circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279711A (en) * 1986-05-28 1987-12-04 Fuji Electric Co Ltd Composite semiconductor device
JPS6481520A (en) * 1987-09-24 1989-03-27 Toshiba Corp Darlington circuit
JP2015015715A (en) * 2013-07-05 2015-01-22 韓國電子通信研究院Ｅｌｅｃｔｒｏｎｉｃｓ ａｎｄ Ｔｅｌｅｃｏｍｍｕｎｉｃａｔｉｏｎｓ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ Metal-insulator transition transistor system including critical current supply element
US9281812B2 (en) 2013-07-05 2016-03-08 Electronics And Telecommunications Research Institute MIT transistor system including critical current supply device

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