JPH0284414U - - Google Patents
Info
- Publication number
- JPH0284414U JPH0284414U JP16270388U JP16270388U JPH0284414U JP H0284414 U JPH0284414 U JP H0284414U JP 16270388 U JP16270388 U JP 16270388U JP 16270388 U JP16270388 U JP 16270388U JP H0284414 U JPH0284414 U JP H0284414U
- Authority
- JP
- Japan
- Prior art keywords
- fet
- microstrip circuit
- high frequency
- frequency amplifier
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Description
第１図はこの考案の一実施例による高周波増幅
器を示す構成図、第２図は従来の高周波増幅器を
示す構成図である。
１はＦＥＴ、２はゲート端子、３はドレイン端
子、４はソース端子、５はマイクロストリツプ回
路、６はグランド接地用マイクロストリツプのパ
ターン、７はセラミツク基板、８はキヤリア、９
は金ワイヤ、１０はスパイラルインダクタである
。なお、図中、同一符号は同一、または相当部分
を示す。
FIG. 1 is a block diagram showing a high frequency amplifier according to an embodiment of this invention, and FIG. 2 is a block diagram showing a conventional high frequency amplifier. 1 is a FET, 2 is a gate terminal, 3 is a drain terminal, 4 is a source terminal, 5 is a microstrip circuit, 6 is a grounding microstrip pattern, 7 is a ceramic substrate, 8 is a carrier, 9
1 is a gold wire, and 10 is a spiral inductor. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
ゲート端子に接続される第１のマイクロストリツ
プ回路と、前記ＦＥＴのドレイン端子に接続され
る第２のマイクロストリツプ回路と、前記第１の
マイクロストリツプ回路と前記第２のマイクロス
トリツプ回路が取付けられるキヤリアとで構成さ
れる高周波増幅器において、前記ＦＥＴのソース
端子とグランドとの間を金ワイヤ及びマイクロス
トリツプ回路で形成したスパイラルインダクタに
よつて接続したことを特徴とする高周波増幅器。 a field effect transistor FET; a first microstrip circuit connected to the gate terminal of the FET; a second microstrip circuit connected to the drain terminal of the FET; In a high frequency amplifier comprising a strip circuit and a carrier to which the second microstrip circuit is attached, a spiral inductor formed of a gold wire and a microstrip circuit is connected between the source terminal of the FET and the ground. A high frequency amplifier characterized in that it is connected by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16270388U JPH0284414U (en) | 1988-12-15 | 1988-12-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16270388U JPH0284414U (en) | 1988-12-15 | 1988-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0284414U true JPH0284414U (en) | 1990-06-29 |
Family
ID=31446769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16270388U Pending JPH0284414U (en) | 1988-12-15 | 1988-12-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0284414U (en) |
-
1988
- 1988-12-15 JP JP16270388U patent/JPH0284414U/ja active Pending
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