JPH0273818U - - Google Patents
Info
- Publication number
- JPH0273818U JPH0273818U JP15242088U JP15242088U JPH0273818U JP H0273818 U JPH0273818 U JP H0273818U JP 15242088 U JP15242088 U JP 15242088U JP 15242088 U JP15242088 U JP 15242088U JP H0273818 U JPH0273818 U JP H0273818U
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- gaas
- gaas fet
- fet
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図ａ，ｂは本考案の一実施例を示す平面図
、回路図、第１図ｃは第１図ａに示す実施例にお
けるＧａＡｓ ＦＥＴの装着状態を示す断面図、
第２図ａ，ｂは従来のこの種マイクロ波増幅器の
構成の一例を示す平面図、回路図、第２図ｃは第
２図ａに示す増幅器におけるコンデンサとＧａＡ
ｓ ＦＥＴの装着状態を示す断面図である。
１……ＧａＡｓ ＦＥＴ、２，３……チヨーク
、４，５……抵抗、６……端子、８……誘電体基
板、９……金属キヤリヤ、１０……開放ラジアル
スタブ。なお図中同一符号は同一または相当する
部分を示す。
1a and 1b are a plan view and a circuit diagram showing an embodiment of the present invention, and FIG. 1c is a sectional view showing the mounting state of the GaAs FET in the embodiment shown in FIG. 1a,
Figures 2a and 2b are a plan view and circuit diagram showing an example of the configuration of a conventional microwave amplifier of this type, and Figure 2c is a capacitor and GaA in the amplifier shown in Figure 2a.
FIG. 3 is a cross-sectional view showing the mounted state of the s FET. 1... GaAs FET, 2, 3... Chiyoke, 4, 5... Resistor, 6... Terminal, 8... Dielectric substrate, 9... Metal carrier, 10... Open radial stub. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
りマイクロ波集積回路化したＧａＡｓ ＦＥＴの
マイクロ波増幅器において、上記ＧａＡｓ ＦＥ
Ｔのソースに接続し該ＧａＡｓ ＦＥＴを使用周
波数でマイクロ波的に接地させる素子をマイクロ
ストリツプラインで構成した開放スタブにしたこ
とを特徴とするマイクロ波増幅器。 In a GaAs FET microwave amplifier in which a bias circuit is integrated into a microwave circuit using a microstrip line, the GaAs FE
1. A microwave amplifier characterized in that the element connected to the source of T and for microwave-grounding the GaAs FET at the operating frequency is an open stub made of a microstripline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15242088U JPH0273818U (en) | 1988-11-25 | 1988-11-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15242088U JPH0273818U (en) | 1988-11-25 | 1988-11-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0273818U true JPH0273818U (en) | 1990-06-06 |
Family
ID=31427331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15242088U Pending JPH0273818U (en) | 1988-11-25 | 1988-11-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0273818U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057535A (en) * | 2000-06-28 | 2002-02-22 | Trw Inc | High dynamic range low noise amplifier |
| WO2002080355A1 (en) * | 2001-03-28 | 2002-10-10 | Sharp Kabushiki Kaisha | High-frequency amplifier |
| JP2002334935A (en) * | 2001-05-08 | 2002-11-22 | Mitsubishi Electric Corp | High-frequency circuit chip, high-frequency circuit device having the chip, and method of manufacturing the same |
-
1988
- 1988-11-25 JP JP15242088U patent/JPH0273818U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057535A (en) * | 2000-06-28 | 2002-02-22 | Trw Inc | High dynamic range low noise amplifier |
| WO2002080355A1 (en) * | 2001-03-28 | 2002-10-10 | Sharp Kabushiki Kaisha | High-frequency amplifier |
| JP2002334935A (en) * | 2001-05-08 | 2002-11-22 | Mitsubishi Electric Corp | High-frequency circuit chip, high-frequency circuit device having the chip, and method of manufacturing the same |
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