JPH032705U - - Google Patents
Info
- Publication number
- JPH032705U JPH032705U JP6328289U JP6328289U JPH032705U JP H032705 U JPH032705 U JP H032705U JP 6328289 U JP6328289 U JP 6328289U JP 6328289 U JP6328289 U JP 6328289U JP H032705 U JPH032705 U JP H032705U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- output side
- dielectric substrate
- circuit
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
- Waveguide Connection Structure (AREA)
Description
第１図は本考案の一実施例の平面図、第２図は
第１図の縦断面図、第３図は従来のマイクロ波帯
増幅器の平面図、第４図は第３図の縦断面図であ
る。
１……内部整合回路付トランジスタ、２……入
力側誘電体基板、３……出力側誘電体基板、４，
４Ａ……金属キヤリア、５……同軸−導波管変換
器、６……アンテナ、７……入力側バイアス供給
回路、８……出力側バイアス供給回路、９……高
周波入力インタフエイス。
Fig. 1 is a plan view of an embodiment of the present invention, Fig. 2 is a longitudinal cross-sectional view of Fig. 1, Fig. 3 is a plan view of a conventional microwave band amplifier, and Fig. 4 is a longitudinal cross-section of Fig. 3. It is a diagram. 1...Transistor with internal matching circuit, 2...Input side dielectric substrate, 3...Output side dielectric substrate, 4,
4A...Metal carrier, 5...Coaxial-waveguide converter, 6...Antenna, 7...Input side bias supply circuit, 8...Output side bias supply circuit, 9...High frequency input interface.
Claims (1)
スタの入力側及び出力側にそれぞれバイアス供給
回路を備えるマイクロ波帯増幅器において、前記
トランジスタの入力端子には高周波入力端子との
間に入力側バイアス回路を形成した入力側誘電体
基板を介挿状態に接続し、該トランジスタの出力
端子には同軸−導波管変換器のアンテナを接続す
るとともに、出力側バイアス回路を形成した出力
側誘電体基板を接続したことを特徴とするマイク
ロ波帯増幅器。 In a microwave band amplifier comprising a transistor with an internal matching circuit and a bias supply circuit on the input side and the output side of this transistor, respectively, an input side bias circuit is formed between the input terminal of the transistor and a high frequency input terminal. The side dielectric substrate is connected in an interposed state, and the antenna of the coaxial-waveguide converter is connected to the output terminal of the transistor, and the output side dielectric substrate on which the output side bias circuit is formed is connected. Features of microwave band amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989063282U JPH087683Y2 (en) | 1989-05-31 | 1989-05-31 | Microwave amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989063282U JPH087683Y2 (en) | 1989-05-31 | 1989-05-31 | Microwave amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH032705U true JPH032705U (en) | 1991-01-11 |
| JPH087683Y2 JPH087683Y2 (en) | 1996-03-04 |
Family
ID=31593189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989063282U Expired - Lifetime JPH087683Y2 (en) | 1989-05-31 | 1989-05-31 | Microwave amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087683Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691510A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Micfm modulator |
| JPS61109301A (en) * | 1984-11-01 | 1986-05-27 | Mitsubishi Electric Corp | Microwave integrated circuit |
| JPS63208314A (en) * | 1987-02-24 | 1988-08-29 | Mitsubishi Electric Corp | Internal matching type semiconductor device |
-
1989
- 1989-05-31 JP JP1989063282U patent/JPH087683Y2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691510A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Micfm modulator |
| JPS61109301A (en) * | 1984-11-01 | 1986-05-27 | Mitsubishi Electric Corp | Microwave integrated circuit |
| JPS63208314A (en) * | 1987-02-24 | 1988-08-29 | Mitsubishi Electric Corp | Internal matching type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH087683Y2 (en) | 1996-03-04 |