JPS63208314A - Internal matching type semiconductor device - Google Patents

Abstract

PURPOSE:To perform excellent impedance matching by providing directional couples to the input terminal and output terminal of a matching circuit and constituting a balanced amplifier. CONSTITUTION:The impedance of a semiconductor chip 3 is matched by a matching circuit 5 on a high-dielectric substrate and matching characteristics are have larger mismatching at a band end than in any other hand as well as a normal internal matching type semiconductor device. In this case, however, the balanced amplifier is constituted by directional couplers incorporated on the matching circuit board 7. Then the mismatching of the semiconductor chip 3 by internal matching increases at a band end and even when a microwave is reflected, reflected waves from two semiconductor chips 3 cancel each other to improve the matching of the balanced amplifier. Consequently, the internal matching type semiconductor device is matched with excellent characteristics even at the band end.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an internally matched semiconductor device used in a microwave band.

[Conventional technology]

FIG. 2 is a plan view showing the configuration of an internally matched semiconductor device that has conventionally been commonly used in the microwave frequency band.

In this figure, 1 is an internal matching type semiconductor package, 2 is an electrode board protruding from the package 1, 3 is a semiconductor chip, 4 is a matching circuit board for impedance matching of the semiconductor chip 3, and 5 is a high This is a matching circuit on a dielectric substrate, and is particularly used to easily perform input matching of the semiconductor chip 3, which has low impedance. 6 is a bonding wire for connection.

Next, its operation will be explained.

A conventional internally matched semiconductor device is one in which a matching circuit is provided within a package 1 in order to match a microwave semiconductor chip 3 to the characteristic impedance of a microwave circuit to which it is applied. Normal characteristic impedance is 50Ω
is selected, and the impedance of semiconductor chip 3 is
The impedance is converted to 50Ω by a matching circuit 5 formed of a high dielectric substrate and a matching circuit 4 formed of an alumina substrate.

Therefore, a matching circuit is designed to perform impedance matching within a required frequency band, and after the matching circuit and semiconductor chip 3 are assembled, the matching circuit is adjusted to complete an internally matched semiconductor device.

Note that the circuit pattern, semiconductor chip 3. The package 1 is connected by bonding wires 6.

[Problem that the invention seeks to solve]

In conventional internally matched semiconductor devices such as those described above, it is difficult to achieve good matching over the entire frequency band, and although good matching is achieved at the center frequency of the band, the impedance mismatch becomes large at the band edges. There was a problem.

Therefore, when using internally matched semiconductor devices in multiple stages, it is necessary to connect an isolator between the stages to reduce characteristic deterioration due to band edge mismatch, which complicates the circuit configuration and increases cost. There was a problem with that.

The present invention was made to solve these problems, and an object of the present invention is to obtain an internally matched semiconductor device that can perform good impedance matching over the entire frequency band.

Means for Solving Problem C] The internally matched semiconductor device according to the present invention has a balanced amplifier configuration by providing a directional coupler at the input end and the output end of a matching circuit.

[Effect]

In this invention, reflected waves caused by impedance mismatch at band edge frequencies cancel each other out within the directional coupler.

〔Example〕

FIG. 1 is a plan view showing the structure of an embodiment of an internally matched semiconductor device of the present invention.

In this figure, the same symbols as in Fig. 2 indicate the same parts,
7 is a matching circuit board which includes a directional coupler for realizing a balanced amplifier configuration. 8 is a balance resistance area for connecting to a directional coupler.

Next, its operation will be explained.

In the internally matched semiconductor device of the present invention, the impedance matching of the semiconductor chip 3 is performed by the matching circuit 5 on the high dielectric substrate, and its matching characteristic is similar to that of the conventional internally matched semiconductor device at the band edge. The matching is large compared to other bands.

However, in this invention, the directional coupler built into the matching circuit board 7 provides a balanced amplifier configuration.

As is generally well known, the effect of high-band matching by a balanced amplifier configuration is that even when the mismatch of the internally matched semiconductor chip 3 becomes large at the band edge and microwave reflection occurs, The reflected waves from the two semiconductor chips 3 cancel each other out, thereby improving the matching of the balanced amplifier.

Therefore, due to this effect, the internally matched semiconductor device can maintain good matching characteristics even at the band edge.

In the above embodiment, impedance matching of the semiconductor chip 3 is performed by the matching circuit 5 of the high dielectric substrate.
Similar effects can be obtained even if the same substrate is used as the matching circuit board 7 forming the directional coupler.

〔Effect of the invention〕

As explained above, this invention has a balanced amplifier configuration by providing directional couplers at the input and output ends of the matching circuit, so that good impedance can be achieved even at the band end where the impedance cannot be matched by the matching circuit. Matching can now be realized, and even when connecting in multiple stages, an isolator, which was conventionally necessary, is no longer required, and the device can be configured simply and at low cost.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing the structure of an embodiment of an internally matched semiconductor device of the present invention, and FIG. 2 is a plan view showing the structure of a conventional internally matched semiconductor device. In this figure, 1 is a package, 2 is an electrode lead of the package, 3 is a semiconductor chip, 4 is a matching circuit board, 5 is a matching circuit on a high dielectric substrate, 6 is a bonding wire, and 7
8 is a matching circuit board on which a directional coupler is formed, and 8 is a balance resistance region. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figure 1 δ - Balan Matata δ Tsunamotoji 1 stock Figure 2 4°! 1. Written amendment to the group classification procedure (spontaneous) Sho 1, Indication of the case, Japanese Patent Application No. 112-40984 2,
Title of the invention Internally matched semiconductor device 3, Relationship to the case of the person making the amendment Patent applicant address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Moriya Shiki 4, representative of Mitsubishi Electric Corporation Agent address: 2-2-3-5 Marunouchi, Chiyoda-ku, Tokyo
, Detailed explanation of the invention column 6 of the specification subject to amendment, Contents of amendment (1) "Matching circuit 4" on page 2, lines 14-15 of the specification,
Correct it to "matching circuit board 4." (2) Similarly, "high band matching" on page 5, line 6 is corrected to "wide band matching."that's all

Claims (1)

[Claims] In an internally matched semiconductor device comprising a semiconductor chip and a matching circuit that matches the input impedance and output impedance of the semiconductor chip, a directional coupler is provided at the input end and the output end of the matching circuit to form a balanced amplifier configuration. An internally matched semiconductor device characterized by: