JPS60141135U - transistor device - Google Patents
transistor deviceInfo
- Publication number
- JPS60141135U JPS60141135U JP2672784U JP2672784U JPS60141135U JP S60141135 U JPS60141135 U JP S60141135U JP 2672784 U JP2672784 U JP 2672784U JP 2672784 U JP2672784 U JP 2672784U JP S60141135 U JPS60141135 U JP S60141135U
- Authority
- JP
- Japan
- Prior art keywords
- transistor device
- terminal
- dielectric material
- conductive substrate
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の小信号用GaAsFETを上方からみた
図、第2図は第1図に示した小信号用GaAsF ET
を用いたソース接地増幅回路のバイアス供給方式を説明
するための図、第3図は第1図に示した小信号用GaA
sFETの接地方式の従来例の断面図、第4図は本考案
の高周波トランジスタ装置の一実施例の上蓋をとった平
面図、第5図は第4図に示した本考案の一実施例のA
−A’断面図である。
1・・・ゲート端子、2・・・ドレイン端子、3・・・
ソース端子、5・・・パッケージ、6・・・コンデンサ
、7・・・スルーホール、8・・・誘電体、9・・・導
体パターン、10・・・地導体、11・・・抵抗、12
・・・可変抵抗、1,23・・・トランジスタチップ、
14・・・導体基板、15.16・・・誘電体フレーム
、18・・・ボンデングワイヤ、19・・・上蓋、21
・・・ゲート端子、22・・・ドレイン端子、23・・
・ソース端子。Figure 1 shows a conventional small-signal GaAsFET seen from above, and Figure 2 shows the small-signal GaAsFET shown in Figure 1.
Figure 3 is a diagram for explaining the bias supply method of a source-grounded amplifier circuit using a GaA amplifier circuit for small signals shown in Figure 1.
4 is a cross-sectional view of a conventional example of a grounded sFET, FIG. 4 is a plan view with the top removed of an embodiment of the high frequency transistor device of the present invention, and FIG. 5 is a diagram of the embodiment of the present invention shown in FIG. 4. A
-A' sectional view. 1...Gate terminal, 2...Drain terminal, 3...
Source terminal, 5... Package, 6... Capacitor, 7... Through hole, 8... Dielectric, 9... Conductor pattern, 10... Ground conductor, 11... Resistor, 12
...Variable resistor, 1,23...Transistor chip,
14... Conductor substrate, 15.16... Dielectric frame, 18... Bonding wire, 19... Upper lid, 21
...Gate terminal, 22...Drain terminal, 23...
・Source terminal.
Claims (1)
れたトランジスタチップと、このトランジスタチップよ
り導出される端子と、この端子と前記導体基板との間に
容量素子として介在する高誘電率の誘電体とを具備する
ことを特徴とするトランジスタ装置。A conductive thug connected to the ground, a transistor chip installed on this conductive substrate, a terminal led out from this transistor chip, and a high dielectric material interposed as a capacitive element between this terminal and said conductive substrate. 1. A transistor device comprising: a dielectric material having a dielectric constant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2672784U JPS60141135U (en) | 1984-02-28 | 1984-02-28 | transistor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2672784U JPS60141135U (en) | 1984-02-28 | 1984-02-28 | transistor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60141135U true JPS60141135U (en) | 1985-09-18 |
Family
ID=30523009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2672784U Pending JPS60141135U (en) | 1984-02-28 | 1984-02-28 | transistor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60141135U (en) |
-
1984
- 1984-02-28 JP JP2672784U patent/JPS60141135U/en active Pending
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