JPS615016U

JPS615016U - Bias circuit for high frequency FET amplifier

Info

Publication number: JPS615016U
Application number: JP8900884U
Authority: JP
Inventors: 史朗森川
Original assignee: 株式会社東芝
Priority date: 1984-06-15
Filing date: 1984-06-15
Publication date: 1986-01-13
Also published as: JPH0246092Y2

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】第１図は本考案の一実施例を示す回路図、第２図〜第４
図はそれぞれ本考案の他の実施例を示す回路図、第５図
及び第６図はＧａＡａＦＥＴのバイアス供給方法を説明
する回路図、第７図は従来のＣａＡａＦＥＴ増幅器用バ
イアス回路の回路図である。１・・・ドレイン電圧入力端子，２・・・ゲート電圧入
力端子、３・・・ドレイン電極用端子、４・・・ゲート
電極用端子、５・・・高周波増幅用ＦＥＴ，６．１４
・・・ツエナーダイオード、７・・・ＦＥＴ，ｆ３・
・・定電圧回路、９・・・規準電圧端子、１０・・・規
準電圧端子、１１・・・フォトカプラ、１２・・・トラ
ンジスタ、１３・・・抵Ｌ１５，１７・・・コンデンサ
、１６・・・ダイオード。[Brief Description of the Drawings] Fig. 1 is a circuit diagram showing an embodiment of the present invention, Figs.
The figures are circuit diagrams showing other embodiments of the present invention, Figures 5 and 6 are circuit diagrams explaining a bias supply method for a GaAaFET, and Figure 7 is a circuit diagram of a conventional bias circuit for a CaAaFET amplifier. . DESCRIPTION OF SYMBOLS 1... Drain voltage input terminal, 2... Gate voltage input terminal, 3... Terminal for drain electrode, 4... Terminal for gate electrode, 5... FET for high frequency amplification, 6.1 4
...Zener diode, 7...FET, f3・
... Constant voltage circuit, 9... Reference voltage terminal, 10... Reference voltage terminal, 11... Photocoupler, 12... Transistor, 13... Resistor L15, 17... Capacitor, 16... ··diode.

Claims

[Scope of utility model registration request]

(1) A high frequency width forming FET whose drain is connected to the drain voltage input terminal via a switching element, and this FET.
A high-frequency FET amplification device characterized by comprising a gate voltage input terminal connected to the gate of the ET, and a photocoupler whose light emitting side is connected to the gate voltage input terminal and whose light receiving side is connected to the control section of the switching element. bias circuit.

(2) The bias circuit for a high frequency FET amplifier according to paragraph 1 of the utility model registration claim, wherein the light emitting side of the photocoupler is connected to the gate voltage input terminal via a level shift element.