JPS59121851U - monolithic transistor amplifier - Google Patents
monolithic transistor amplifierInfo
- Publication number
- JPS59121851U JPS59121851U JP1391283U JP1391283U JPS59121851U JP S59121851 U JPS59121851 U JP S59121851U JP 1391283 U JP1391283 U JP 1391283U JP 1391283 U JP1391283 U JP 1391283U JP S59121851 U JPS59121851 U JP S59121851U
- Authority
- JP
- Japan
- Prior art keywords
- transistor amplifier
- monolithic transistor
- resistor
- monolithic
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の帰還回路をもつモノリシックＦＥＴ増幅
器の構造図、第２図は第１図の等価回路図、第３図はこ
の考案によるモノリシックトランジスタ増幅器の一実施
例の構造図、第４図は第３図に示すものの等価回路図で
ある。図中、１はＧａＡｓまたはＳｉなどの半導体の基
板、２はＦＥＴのソース電極、３はＦＥＴのゲート電極
、４はＦＥＴのドレイン電極、５は薄膜コンデンサを形
成する誘電体、６は抵抗体、７は金属膜、８は抵抗体ａ
１９は抵抗体ｂ１１０はエアブリッジである。なお、図
中、同一あるいは相当部分には同一符号を付して示しで
ある。Figure 1 is a structural diagram of a monolithic FET amplifier with a conventional feedback circuit, Figure 2 is an equivalent circuit diagram of Figure 1, Figure 3 is a structural diagram of an embodiment of a monolithic transistor amplifier according to this invention, and Figure 4. is an equivalent circuit diagram of what is shown in FIG. 3. In the figure, 1 is a semiconductor substrate such as GaAs or Si, 2 is a source electrode of the FET, 3 is a gate electrode of the FET, 4 is a drain electrode of the FET, 5 is a dielectric forming a thin film capacitor, 6 is a resistor, 7 is a metal film, 8 is a resistor a
19 is a resistor b110 is an air bridge. In the drawings, the same or corresponding parts are designated by the same reference numerals.
Claims (1)
て、基板上に形成した抵抗体の一端に接続する金属膜と
、上記の抵抗体の他端に接続する金属膜との間の基板上
に空間を介して電気導体である金属膜を設けたことを特
徴とするモノリシックトランジスタ増幅器。In a monolithic transistor amplifier having a resistor, an electrical conductor is formed on the substrate through a space between a metal film connected to one end of the resistor formed on the substrate and a metal film connected to the other end of the resistor. A monolithic transistor amplifier characterized by being provided with a metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1391283U JPS59121851U (en) | 1983-02-02 | 1983-02-02 | monolithic transistor amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1391283U JPS59121851U (en) | 1983-02-02 | 1983-02-02 | monolithic transistor amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121851U true JPS59121851U (en) | 1984-08-16 |
| JPS642448Y2 JPS642448Y2 (en) | 1989-01-20 |
Family
ID=30145286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1391283U Granted JPS59121851U (en) | 1983-02-02 | 1983-02-02 | monolithic transistor amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121851U (en) |
-
1983
- 1983-02-02 JP JP1391283U patent/JPS59121851U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS642448Y2 (en) | 1989-01-20 |
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