JPS6052714U - Monolithic parallel feedback FET amplifier - Google Patents
Monolithic parallel feedback FET amplifierInfo
- Publication number
- JPS6052714U JPS6052714U JP14526183U JP14526183U JPS6052714U JP S6052714 U JPS6052714 U JP S6052714U JP 14526183 U JP14526183 U JP 14526183U JP 14526183 U JP14526183 U JP 14526183U JP S6052714 U JPS6052714 U JP S6052714U
- Authority
- JP
- Japan
- Prior art keywords
- fet amplifier
- parallel feedback
- monolithic parallel
- feedback fet
- monolithic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の並列帰還型ＦＥＴ増幅器の構成図、第２
図は第１図の等価回路図、第３図は比較的低い周波数に
おける第２図の等価回路図、第４図ａ、 ｂはこの考案
の実施例の構造図、第５図は第４図の等価回路図である
。
図中、１はＦＥＴ、２はゲート電極、３はソース電極、
４はドレイン電極、５はゲート電極に接する導体膜、６
は抵抗膜ａ、７は平行平板キャパシタａｓ８はドレイン
電極に接する導体膜、９は抵抗膜す、１０は平行平板キ
ャパシタｂ１１１はエアブリッジａ１１２はエアブリッ
ジｂ１１３はエアブリッジＣである。なお、図中、同一
あるいは相当部分には同一符号を付して示しである。Figure 1 is a configuration diagram of a conventional parallel feedback FET amplifier;
The figure is an equivalent circuit diagram of Figure 1, Figure 3 is an equivalent circuit diagram of Figure 2 at a relatively low frequency, Figures 4a and b are structural diagrams of an embodiment of this invention, and Figure 5 is a diagram of Figure 4. FIG. In the figure, 1 is an FET, 2 is a gate electrode, 3 is a source electrode,
4 is a drain electrode, 5 is a conductor film in contact with the gate electrode, 6
7 is a resistive film a, 7 is a parallel plate capacitor, 8 is a conductor film in contact with the drain electrode, 9 is a resistive film, 10 is a parallel plate capacitor b111 is an air bridge a112 is an air bridge b113 is an air bridge C. In the drawings, the same or corresponding parts are designated by the same reference numerals.
Claims (1)
設けたモノリシック並列帰還型ＦＥＴ増幅器において、
半導体基板上に空間を介して形成した帯状金属で隣接す
る抵抗体の端子間を接続し、かつ他の帯状金属で隣接す
るキャパシタの端子間を接続した回路が少なくとも一つ
帰還回路に含まれていることを特徴とするモノリシック
並列帰還型ＦＥＴ増幅器。In a monolithic parallel feedback FET amplifier in which a feedback circuit is provided between the gate terminal and drain terminal of the FET,
The feedback circuit includes at least one circuit in which the terminals of adjacent resistors are connected by a strip metal formed on the semiconductor substrate with a space therebetween, and the terminals of adjacent capacitors are connected by another strip metal. A monolithic parallel feedback FET amplifier characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14526183U JPS6052714U (en) | 1983-09-20 | 1983-09-20 | Monolithic parallel feedback FET amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14526183U JPS6052714U (en) | 1983-09-20 | 1983-09-20 | Monolithic parallel feedback FET amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6052714U true JPS6052714U (en) | 1985-04-13 |
Family
ID=30323685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14526183U Pending JPS6052714U (en) | 1983-09-20 | 1983-09-20 | Monolithic parallel feedback FET amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6052714U (en) |
-
1983
- 1983-09-20 JP JP14526183U patent/JPS6052714U/en active Pending
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