JPS6073258U - integrated circuit - Google Patents

integrated circuit

Info

Publication number
JPS6073258U
JPS6073258U JP1983164952U JP16495283U JPS6073258U JP S6073258 U JPS6073258 U JP S6073258U JP 1983164952 U JP1983164952 U JP 1983164952U JP 16495283 U JP16495283 U JP 16495283U JP S6073258 U JPS6073258 U JP S6073258U
Authority
JP
Japan
Prior art keywords
integrated circuit
voltage supply
bonding pad
active elements
supply bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983164952U
Other languages
Japanese (ja)
Inventor
高野　勇
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1983164952U priority Critical patent/JPS6073258U/en
Publication of JPS6073258U publication Critical patent/JPS6073258U/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、直流増幅回路の一例を示す回路図、第２図は
従来のＧ、　Ａ、集積回路におけるＩＣチップと、ＤＣ
ブロック用キャパシタとの構成を示した図、第３図は本
考案の集積回路の構成例を示す図、第４図は第３図のＡ
−Ａ’における断面図である。 図において、１０１・・・・・・入力端、１０２・・・
・・・出力端、１０３・・・・・・ゲート電圧供給端子
、１０４・・・・・・ドレイン電圧供給端子、１０５，
１０６・・・・・・ＤＣブｄツク用主キヤパシタ１０７
・・・・・・ゲート電圧供給用抵抗、１０８・・・・・
・負荷抵抗、１０９・・・・・・Ｇ１Ａｓ電界効果トラ
ンジスタ、２０１・・・・・・Ｇ、　Ａ、−ＩＣ基板、
２０２，２０３・・・・・・ＭＩＳキャパシタ、２０４
・・・・・・ボンディングワイヤ、３０３゜４０５・・
・・・・電圧供給用ポンディングパッド、３１０．４１
０・・・・・・グランドパターン、４００・・・・・・
半絶縁性Ｇ。Ａ、高抵抗基板、４２０・・・・・・誘電
体層、をそれぞれ示す。Fig. 1 is a circuit diagram showing an example of a DC amplifier circuit, and Fig. 2 shows an IC chip in a conventional G, A, integrated circuit, and a DC amplifier circuit.
FIG. 3 is a diagram showing a configuration example of the integrated circuit of the present invention, and FIG. 4 is a diagram showing the configuration with a block capacitor.
It is a sectional view at -A'. In the figure, 101... input terminal, 102...
...Output end, 103...Gate voltage supply terminal, 104...Drain voltage supply terminal, 105,
106... Main capacitor for DC book 107
...Resistance for gate voltage supply, 108...
・Load resistance, 109...G1As field effect transistor, 201...G, A, -IC board,
202, 203... MIS capacitor, 204
...Bonding wire, 303°405...
...Ponding pad for voltage supply, 310.41
0...Ground pattern, 400...
Semi-insulating G. A, a high-resistance substrate, and 420 . . . dielectric layer are shown, respectively.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基板上に複数個の能動素子とその能動素子相互間の接続
を行なう信号線を形成して回路を構成する集積回路にお
いて、電圧供給用ポンディングパッドの下部に誘電体層
を挾んでグラヴド層を配置する事により前記電圧供給用
ポンディングパッド自体をキャパシタとして形成するこ
とを特徴とする集積回路。In an integrated circuit where a circuit is constructed by forming a plurality of active elements on a substrate and signal lines connecting the active elements, a gloved layer is formed by sandwiching a dielectric layer under a voltage supply bonding pad. An integrated circuit characterized in that the voltage supply bonding pad itself is formed as a capacitor by arranging it.
JP1983164952U 1983-10-25 1983-10-25 integrated circuit Pending JPS6073258U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983164952U JPS6073258U (en) 1983-10-25 1983-10-25 integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983164952U JPS6073258U (en) 1983-10-25 1983-10-25 integrated circuit

Publications (1)

Publication Number Publication Date
JPS6073258U true JPS6073258U (en) 1985-05-23

Family

ID=30361505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983164952U Pending JPS6073258U (en) 1983-10-25 1983-10-25 integrated circuit

Country Status (1)

Country Link
JP (1) JPS6073258U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911587A (en) * 1972-06-01 1974-02-01
JPS5649556A (en) * 1979-09-28 1981-05-06 Toshiba Corp Mos integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911587A (en) * 1972-06-01 1974-02-01
JPS5649556A (en) * 1979-09-28 1981-05-06 Toshiba Corp Mos integrated circuit

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