JPS62152450U - - Google Patents

Info

Publication number
JPS62152450U
JPS62152450U JP4103886U JP4103886U JPS62152450U JP S62152450 U JPS62152450 U JP S62152450U JP 4103886 U JP4103886 U JP 4103886U JP 4103886 U JP4103886 U JP 4103886U JP S62152450 U JPS62152450 U JP S62152450U
Authority
JP
Japan
Prior art keywords
integrated circuit
microwave integrated
dielectric substrate
heat dissipation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4103886U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4103886U priority Critical patent/JPS62152450U/ja
Publication of JPS62152450U publication Critical patent/JPS62152450U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Non-Reversible Transmitting Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の1実施例のFET斜視図、第
2図は本考案による帰還型発振器の主要回路パタ
ーン図、第3図はFETの斜視図、第4図は従来
の帰還型発振器の主要回路パターン図である。 図において、1は接地放熱基板、2は固定孔、
3はゲート電極リード、4はドレイン電極リード
、7はセラミツク基板、8は金細線、10,11
はFET、20は整合スタブ、30は誘電体共振
器、40は電力分配器、50,51,52,53
,54,60はMIC線路である。
Fig. 1 is a perspective view of an FET according to an embodiment of the present invention, Fig. 2 is a main circuit pattern diagram of a feedback oscillator according to the invention, Fig. 3 is a perspective view of an FET, and Fig. 4 is a diagram of a conventional feedback oscillator. It is a main circuit pattern diagram. In the figure, 1 is a grounded heat dissipation board, 2 is a fixing hole,
3 is a gate electrode lead, 4 is a drain electrode lead, 7 is a ceramic substrate, 8 is a thin gold wire, 10, 11
is a FET, 20 is a matching stub, 30 is a dielectric resonator, 40 is a power divider, 50, 51, 52, 53
, 54, and 60 are MIC lines.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 大電力用半導体素子の接地放熱基板上に誘電体
基板を搭載し、該誘電体基板上にマイクロ波集積
回路を設けたことを特徴とするマイクロ波集積回
路装置。
A microwave integrated circuit device characterized in that a dielectric substrate is mounted on a grounded heat dissipation substrate of a high power semiconductor element, and a microwave integrated circuit is provided on the dielectric substrate.
JP4103886U 1986-03-20 1986-03-20 Pending JPS62152450U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4103886U JPS62152450U (en) 1986-03-20 1986-03-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4103886U JPS62152450U (en) 1986-03-20 1986-03-20

Publications (1)

Publication Number Publication Date
JPS62152450U true JPS62152450U (en) 1987-09-28

Family

ID=30855665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4103886U Pending JPS62152450U (en) 1986-03-20 1986-03-20

Country Status (1)

Country Link
JP (1) JPS62152450U (en)

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