JPH0314816U - - Google Patents
Info
- Publication number
- JPH0314816U JPH0314816U JP7598189U JP7598189U JPH0314816U JP H0314816 U JPH0314816 U JP H0314816U JP 7598189 U JP7598189 U JP 7598189U JP 7598189 U JP7598189 U JP 7598189U JP H0314816 U JPH0314816 U JP H0314816U
- Authority
- JP
- Japan
- Prior art keywords
- pair
- substrate
- microstrip line
- embossed portions
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
Description
第１図は本考案の一実施例に係わるマイクロ波
増幅器の構成を示す外観図、第２図は上記マイク
ロ波増幅器のＦＥＴ接地状態を示す等価回路図、
第３図及び第４図はそれぞれ従来のマイクロ波増
幅回路の構成を示す外観図、第５図は上記従来の
マイクロ波増幅回路のＦＥＴ接地状態を示す等価
回路図である。
１……マイクロ波ＦＥＴ、２Ｓ……ソース電極
表面パターン、２Ｄ……ドレイン電極表面パター
ン、２Ｇ……ゲート電極表面パターン、３……ゲ
ート電極リード、４ａ，４ｂ……ソース電極リー
ド、５……ドレイン電極リード、６……シヤシ、
８……基板、１０ａ，１０ｂ……エンボス部、１
１……半田、１１ａ，１１ｂ……貫通孔。
FIG. 1 is an external view showing the configuration of a microwave amplifier according to an embodiment of the present invention, and FIG. 2 is an equivalent circuit diagram showing the FET grounding state of the microwave amplifier.
3 and 4 are external views showing the configuration of a conventional microwave amplifier circuit, respectively, and FIG. 5 is an equivalent circuit diagram showing the FET grounding state of the conventional microwave amplifier circuit. 1... Microwave FET, 2S... Source electrode surface pattern, 2D... Drain electrode surface pattern, 2G... Gate electrode surface pattern, 3... Gate electrode lead, 4a, 4b... Source electrode lead, 5... Drain electrode lead, 6...shade,
8...Substrate, 10a, 10b...Embossed part, 1
1...Solder, 11a, 11b...Through holes.
Claims (1)
に電界効果トランジスタを接続してなるマイクロ
波増幅器において、 上記マイクロストリツプ線路の接地パターンに
上記基板を伴ない貫通形成され上記電界効果トラ
ンジスタの対向するソース電極リードの先端間間
隔に対応して離間させた一対の貫通孔と、 上記基板の裏面側に接触配置された接地部材と
、 この接地部材の基板側表面に上記一対の貫通孔
の形成間隔に対応して離間形成され該貫通孔から
上記マイクロストリツプ線路の接地パターン上に
突出接続して配置される一対のエンボス部とを具
備し、 上記電界効果トランジスタはその対向するソー
ス電極リードを上記一対のエンボス部相互間に位
置合わせして接続されることを特徴とするマイク
ロ波増幅器。[Claims for Utility Model Registration] In a microwave amplifier in which a field effect transistor is connected to a microstrip line formed on the surface of a substrate, a through-hole is formed in the ground pattern of the microstrip line with the substrate. a pair of through holes spaced apart corresponding to the distance between the tips of opposing source electrode leads of the field effect transistor; a grounding member disposed in contact with the back side of the substrate; and a surface of the grounding member on the substrate side. a pair of embossed portions formed at a distance corresponding to the formation interval of the pair of through holes and protruding from the through hole onto the ground pattern of the microstrip line and connected to the pair of embossed portions; A microwave amplifier characterized in that the opposing source electrode leads are aligned and connected between the pair of embossed portions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7598189U JPH0314816U (en) | 1989-06-28 | 1989-06-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7598189U JPH0314816U (en) | 1989-06-28 | 1989-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0314816U true JPH0314816U (en) | 1991-02-14 |
Family
ID=31617038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7598189U Pending JPH0314816U (en) | 1989-06-28 | 1989-06-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0314816U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313407A (en) * | 1986-07-02 | 1988-01-20 | Mitsubishi Electric Corp | Microwave semiconductor amplifier |
| JPS6338576A (en) * | 1986-08-01 | 1988-02-19 | Anelva Corp | Sputtering device |
| JPS63146604A (en) * | 1986-12-10 | 1988-06-18 | Matsushita Electric Ind Co Ltd | Microwave amplifier |
-
1989
- 1989-06-28 JP JP7598189U patent/JPH0314816U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313407A (en) * | 1986-07-02 | 1988-01-20 | Mitsubishi Electric Corp | Microwave semiconductor amplifier |
| JPS6338576A (en) * | 1986-08-01 | 1988-02-19 | Anelva Corp | Sputtering device |
| JPS63146604A (en) * | 1986-12-10 | 1988-06-18 | Matsushita Electric Ind Co Ltd | Microwave amplifier |