JPS6313407A - Microwave semiconductor amplifier - Google Patents

Abstract

PURPOSE:To easily mount a field effect transistor (FET) to a source electrode by forming a wall made of an insulator to a gap between the source electrode and a minute adjustment pattern on a microwave integrated circuit (MIC) substrate. CONSTITUTION:The wall 9 made of an insulator is formed to the gap between the source electrode 3 and the minute adjustment pattern 6 on the MIC substrate 1. Since the wall 9 made of the insulator exists at both sides of the source electrode 3, the possibility of the position deviation of the FET 2 from the source electrode 3 is precluded in mounting the FET 2 on the MIC board 1 and the mounting of the FET 2 is attained with high accuracy. Further, even in connecting an input matching circuit 4 and an output matching circuit 5 to the minute adjusting pattern 6 for the adjustment, since the source electrode 3 is isolated electrically by the insulator wall 9, the possibility of short-circuit is pecluded.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a microwave integrated circuit board (Mic-row
This invention relates to a microwave semiconductor amplifier in which a field effect transistor (hereinafter referred to as FET) is mounted on an aveI C substrate (hereinafter referred to as MIC substrate).

[Conventional technology]

Figure 3 is a plan view of a conventional microwave semiconductor amplifier;
The figure is a sectional view taken along line B-B' in FIG. 3. In these figures, reference numeral 1 denotes a MIC substrate, which is made of ceramic or the like having low dielectric loss in the microwave band. 2 is FET
It is attached onto the MIC board 1 by soldering or other methods. 3 is the source electrode, which connects the source of FET2 and the MIC
It is connected to the ground conductor on the back surface of the board 1 through a through hole. Reference numeral 4 denotes an input matching circuit consisting of a microstrip line or the like, which is constructed on the MIC substrate 1 and connected to the gate of the FET 2. 5 is an output matching circuit also made of microstrip lines, etc., which is configured on the MIC board 1, and which is connected to the FET
Connected to the drain of 2. 6 is a fine adjustment pattern configured on the MIC board 1, and 7 and 8 are the FEs, respectively.
These are a gate power supply circuit and a drain power supply circuit for supplying DC power to T2. The conventional microwave semiconductor amplifier is configured as described above, and a power supply is applied to the FET 2 through the gate power supply circuit 7 and the drain power supply circuit 8.
4. Input matching circuit to 50 ohms, usually used in the microwave band. The output matching circuit 5 performs matching and amplification operation.

Furthermore, mismatching due to variations in the characteristics of the FET 2 is caused by the fine adjustment pattern 6 and the input matching circuit 4. By connecting the output matching circuit 5, matching can be re-established.

[Problem that the invention seeks to solve]

Conventional microwave semiconductor amplifiers such as those mentioned above are FET
Since the mounting position of FET 2 affects the characteristics, it is necessary to accurately mount FET 2 to each electrode. Also, when connecting the fine adjustment pattern 6 to the input matching circuit 4 and output matching circuit 5, if the FET 2 is installed close to the part, there is a risk of short circuiting to the source electrode 3, so high precision assembly is still required. The problem was that it was required.

This invention was made to solve these problems, and it is possible to easily attach the FET to the source electrode during assembly, and also to connect the fine adjustment pattern to the input matching circuit and the output matching circuit. The object of the present invention is to obtain a microwave semiconductor amplifier which can eliminate the possibility of short circuiting to the source electrode.

[Means for solving problems]

The microwave semiconductor amplifier according to the present invention has an insulating wall formed in the gap between the source electrode on the MIC substrate and the fine adjustment pattern.

[Effect]

In this invention, the insulating wall formed between the source electrode on the MIC substrate and the fine adjustment pattern serves as a guide during the installation of the FET and electrically isolates the source electrode.

〔Example〕

FIG. 1 is a plan view of an embodiment of the microwave semiconductor amplifier of the present invention, and FIG. 2 is a sectional view taken along line A-A' in FIG. In these figures, the same reference numerals as in FIGS. 3 and 4 indicate the same parts, 9 is an insulator wall, and MIC
It is made of the same material as the insulator of the substrate 1 and is formed in the gap between the source electrode 3 and the fine adjustment pattern 6.

That is, in the microwave semiconductor amplifier of the present invention, since there are insulating walls 9 on both sides of the source electrode 3, there is a possibility that the FET 2 will be misaligned with the source electrode 3 when the FET 2 is mounted on the MIC substrate 1. The FET 2 can be easily installed with high precision.

Furthermore, even when connecting the input matching circuit 4 or the output matching circuit 5 to the fine adjustment pattern 6 for adjustment, there is no risk of short circuiting because the source electrode 3 is electrically isolated by the insulating wall 9. .

〔Effect of the invention〕

As explained above, in this invention, an insulating wall is formed in the gap between the source electrode on the MIC substrate and the fine adjustment pattern, so it is possible to easily attach the FET to the source electrode with high precision, and it also allows alignment. This has the effect of eliminating the risk of short-circuiting with the source electrode when making fine adjustments.

[Brief explanation of the drawing]

FIG. 1 is a plan view of an embodiment of the microwave semiconductor amplifier of the present invention, FIG. 2 is a sectional view taken along line A-A' in FIG. 1, and FIG. 3 is a plan view of a conventional microwave semiconductor amplifier.
FIG. 4 is a sectional view taken along line BB' in FIG. 3. In the figure, 1 is the MIC board, 2 is the FET, 3 is the source electrode, 4 is the input matching circuit, 5 is the output matching circuit, 6 is the fine adjustment pattern, 7 is the gate power supply circuit, 8 is the drain power supply circuit, and 9 is the insulation It is the wall of the body. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3 Figure 4 Procedural amendment (voluntary) To the Commissioner of the Japan Patent Office: 1.
Indication of the case: Japanese Patent Application No. 156539/1982 2, Title of the invention: Microwave semiconductor amplifier 3, Relationship with the person making the amendment: Address of the patent applicant: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo. Name (601) Mitsubishi Electric Co., Ltd. Representative Moriya Shiki Mitsubishi Electric Co., Ltd. 5, Detailed explanation of the invention column 6 of the specification subject to the amendment, page 3, lines 17-18 of the specification of the contents of the amendment [ Easily connect the FET to the source electrode during assembly to ensure accuracy during assembly
T to the source electrode.''that's all

Claims (1)

[Claims] In a microwave semiconductor amplifier having a microwave integrated circuit board on which a source electrode to which a field effect transistor is attached, an input matching circuit, an output matching circuit, and a fine adjustment pattern are formed, the source electrode on the microwave integrated circuit board and a fine adjustment pattern are formed. A microwave semiconductor amplifier characterized in that an insulating wall is formed in gaps between patterns.