JPS61135211A - Microwave semiconductor amplifier - Google Patents

Abstract

PURPOSE:To eliminate the cause of deterioration in a high frequency characteristic and reduction of the yield of mass production, by positioning the bonding pad side of an FET against a microstrip line and connecting the bonding pad and the microstrip line by means of a metallic thin plate having a low level of resistance. CONSTITUTION:An FET7 is set with its side containing the bonding pads of electrodes of a gate electrode 8, source electrode 9 and a drain electrode 10 respectively set against the microstrip line of an MIC substrate 1. These electrodes 8-10 of the FET7 are connected to a gate electrode transmission line 5, a source earthed electrode 3 and a drain transmission line 6 via gold ribbons 16-18 respectively. The spaces among the electrodes 8-10 and the line 5, the electrode 3 and the line 6 can be reduced down to the thickness of the gold ribbon. This can avoid the reduction of yield due to the variance of length of a bonding wire as well as the deterioration of high frequency characteristic.

Description

[Detailed description of the invention] [Industrial application field] This invention relates to a microwave integrated circuit board (Micr).

This invention relates to a microwave semiconductor amplifier in which a field effect transistor (hereinafter referred to as FIT) is mounted on a wave I C1 (hereinafter referred to as MIC substrate). - [Prior art] Fig. 3 is a plan view of a microwave semiconductor amplifier using a conventional MIC substrate, and Fig. 4 (a) is an enlarged plan view of part A surrounded by a broken line in Fig. 3. , Fig. 4(b) is shown in Fig. 4(
It is a sectional view taken along a-c's< of a). In Fig. 3 and Fig. 4 (a) and (b), 1 is an MIC substrate made of ceramic having low dielectric loss in the microwave band, and 2 is a MIC substrate formed by co-firing or plating on the back side of this MIC substrate 1. A ground conductor made of a multilayer metal film of tungsten, Nilaglu, and gold, 3 a source ground electrode made of a multilayer gold S film made of the same material as the ground conductor 2, 4 the ground conductor 2,
5 is made of the same multilayer metal as the ground conductor 2, and is a gate electrode transmission line that constitutes an input/output matching circuit of the amplifier using a microstrip line. A tunnel-in electrode transmission line configured in the same manner as the transmission line 5; 1 is an FET mounted on the source grounded electrode 3; 8;
, 9 and 10 are the gate electrode, source electrode, and tonoin electrode of this FET 7, respectively, and this gate electrode 8
．． Source electrode 9. The bonding pad surface of each of the Tonoin electrodes 10 faces upward. 1.1.12 and 13 are the gate electrode 8 and gate electrode transmission line 5, respectively.
A gate bonding wire is connected between the source electrode 9 and the source grounded electrode 30, and between the Tonoin electrode 10 and Tonoin electrode transmission line 60.

14.15 is the source bonding wire and the source bonding wire, and 14.15 is the D
Gate electrode transmission line 135 to supply C bias
．． This is a gate source terminal and a dome source terminal which are connected to the inlet electrode transmission line 6 and configured so as not to affect the microwave characteristics.

The conventional microwave semiconductor amplifier is configured as described above, and the FE is
It can be operated by applying a DC bias voltage to T7. At this time, the input/output impedance of the FIT 7 is matched to a specific impedance (usually 50 ohms is used in the microwave band) by the gate'ML pole transmission line 5 and the tonoin electrode transmission line 6. This matching state is the length of the FET 7 and the gate electrode transmission line 5.

It is determined by the shape, length and shape of the Tonoin electrode transmission line 6.

[Problem that the invention seeks to solve]

In the conventional semiconductor amplifier as described above, the FET 7 and the gate electrode transmission line 5. Ton-in electrode transmission line6. The gate bonding wire 11 is connected to the source ground electrode 3. Since the source bonding wire 12° is connected by the V imponding wire 13, the matching conditions change depending on the wire length, and as the operating frequency of the microwave semiconductor amplifier becomes higher, the influence of the wire length increases. This required precision control of the wire length and was a cause of a decrease in yield. Further, since the source of the FET 7 is not grounded at high frequency by the source bonding wire 12, the specific resistance is lowered, so there is a problem that the length of the source bonding wire 12 must be shortened by t.

This invention was made to solve this problem, and by shortening the length of the source bonding wire, it is possible to eliminate the cause of deterioration of high frequency characteristics and the decrease in yield during mass production. The purpose is to obtain a semiconductor amplifier.

[Means for solving problems]

In the microphone-regenerative conductor amplifier according to the present invention, a surface with a bonding pad of an FET is positioned facing a microstrip line on a vMIc substrate, and a gold ribbon or gold wire is connected between the bonding pad and the microstrip line. The connection is made using a thin metal plate with low resistance.

[Effect]

In this invention, the bonding pad of the FET is positioned facing the microstrip line on the 2MIc substrate, and a low-resistance metal such as a gold ribbon or gold wire is connected between the bonding pad and the microstrip line. The thin plates allow connections without being affected by length.

〔Example〕

FIG. 1 is a plan view showing one embodiment of the present invention, and FIG.
Figure (a) is an enlarged plan view of part A surrounded by the broken line in Figure 1, and Figure 2 (b) is a sectional view taken along line B-B' in Figure 2 (a). 2(a) and (b), the numbers 1 to 10 and 14.15 are shown in FIGS. 3 and 4 (
a), (b) are the same as those shown in K.

FET7 has a gate electrode 8. Source electrode 9. Dong Yi: / [
The surface of each electrode of the pole 10 with its respective bonding pad is mounted facing the microstrip line of the YMIC substrate 1. 16 is a gold gate ribbon connecting between the gate electrode 8 and the gate electrode transmission line 5, and 1γ is between the source electrode 9 and the source ground electrode 3. The subsequent gold source ribbon 18 is between the dovetail electrode 1G and the tone-in electrode transmission line 6? It is a gold do/in ribbon that connects. The gate il (source terminal 14 and drain power supply terminal 15) for supplying the FETTVcDC bias is configured so as not to affect the microwave characteristics.

In the microwave semiconductor amplifier configured as described above, the FET 7 is connected to the gate power terminal 14, which is matched to a specific impedance by a matching circuit determined by the length and shape of the gate electrode transmission line 5 and the tunnel electrode transmission line 6. Although it is operated by applying a D'C bias voltage from the domain power supply terminal 15 as in the conventional example,
Each electrode of the FET 7 is positioned facing the microstrip line side of the YMIC substrate 1, and the gate ribbon 16. In the conventional example, it was difficult to make the length of the bonding wire less than the thickness d of the FET 7 and to control the length of the bonding wire because the source ribbon If was connected by the do/in ribbon 1a. According to the embodiment, each electrode of the FET 7 and the gate electrode transmission line 5. Source ground electrode 3. The distance between the wire and the wire 6 can be reduced to the thickness of the gold ribbon, and compared to the length of the conventional bonding wire shown in FIGS. It becomes very easy to control the thickness. Therefore, it is possible to eliminate the causes of a decrease in yield due to deterioration of characteristics at high frequencies and variations in the length of bonding wires.

In the above embodiment, each electrode of the FET 7 and the microstrip line of the MIC board 1 were connected using a gold ribbon, but even ribbons or thin wires made of gold wire or other metals may be used. good.

〔Effect of the invention〕

As explained above, in this invention, the surface of the bonding pad of the FET is located facing the microstrip line, and the bonding pad and the microstrip line are connected by a thin metal plate with low resistance, resulting in a high yield. , a high-performance microwave semiconductor amplifier can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a microwave semiconductor amplifier according to an embodiment of the present invention, FIG. 2(a) is an enlarged plan view of the section A surrounded by the broken line in FIG. Fig. 3 is a plan view of a conventional microwave semiconductor amplifier, Fig. 4 (&) is an enlarged plan view of part A surrounded by the broken line in Fig. 3, Figure 4 (b) is CG' in Figure 4 (IL).
It is a cross-sectional view along the line. In the figure, 1 is a MIC board, 2 is a ground conductor, 3 is a source ground electrode, 4 is a through hole, 5 is a gate electrode transmission line, and 6 is a tunnel electrode transmission line. T is an FET, 8 is a gate electrode, and 9 is a source electrode. 10 is a doV-in electrode, 14 is a gate power supply terminal, 15 is a doV-in power supply terminal, 1B is a gate ribbon, 17 is a source ribbon, and 18 is a drain ribbon. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others) Figure 1 1: MIC, 1st edition 14: Gate wo Yuuko 2 Figure 2: Knee conductor 4 Niss run nail 8: Gate 41 Satoshi Figure 4 Procedure amendment ( Voluntary) Carving 0 views 1h 1, Indication of the incident Patent Application No. 1982-258659 2,
Title of the invention: Microwave semiconductor amplifier 3, Person making the amendment: 5 Detailed description of the invention in the specification subject to amendment 6, Description of amendments, page 4, line 19, page 5, lines 1 and 2 "Wire length" is corrected to "wire length" in both cases. that's all

Claims (3)

[Claims] (1) In a microwave semiconductor amplifier comprising a microstrip line formed on a microwave integrated circuit board, a field effect transistor, and a matching circuit constituted by the microstrip line, a surface of a bonding pad of the field effect transistor is located facing the microstrip line, and the bonding pad and the microstrip line are connected by a thin metal plate with low resistance. (2) The microwave semiconductor amplifier according to claim (1), characterized in that a gold ribbon is used as a low-resistance metal thin plate connecting between the bonding pad and the microstrip line. (3) The microwave semiconductor amplifier according to claim (1), characterized in that a gold wire is used as a low-resistance thin metal plate connecting between the bonding pad and the microstrip line.