JPH10335575A - High-frequency signal transmission line and semiconductor device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-frequency signal transmission line in which a sheet resistor having a small resistance value can be obtained easily with accuracy and the resistance value of the sheet resistor can be changed easily and a semiconductor device using the transmission line. SOLUTION: In a high-frequency signal transmission line, bypass wires 21 and 22 which by-pass a sheet resistor 16 provided on a transmission line pattern 8 and by-pass wires 23 and 24 which by-pass a sheet resistor 17 provided on the pattern 8 are provided so that small resistance values which have been difficult to obtain upon forming the sheet resistors can be obtained with substantially high accuracy. In addition, this high-frequency signal transmission line is used for a semiconductor device, such as the internally matched type FET 1, etc., which processes high-frequency signals.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency signal transmission line, particularly to a high-frequency signal transmission line having a sheet-shaped resistor formed thereon, and a semiconductor device using the high-frequency signal transmission line.

[0002]

2. Description of the Related Art FIG. 10 is a plan view showing the internal structure of a conventional example of a semiconductor device using a high-frequency signal transmission line. FIG. 10 shows an internal matching FET as an example. In FIG. 10, an internal matching type FET 100 for amplifying a signal is formed by a metal package 101, an input side matching circuit board 102, an output side matching circuit board 103, and FET chips 104 and 105. The input side matching circuit board 102 and the output side matching circuit board 103 are connected to the FET chips 104 and 105 by bonding wires 106, respectively.

The input-side matching circuit board 102 and the output-side matching circuit board 103 each have a transmission line pattern using a microstrip line formed on a high dielectric constant substrate. That is, the input side matching circuit board 102
High permittivity substrate 10 on which transmission line pattern 107 is formed
8, the output-side matching circuit board 103 is a high-permittivity substrate 110 on which the transmission line pattern 109 is formed.
It is formed with. An input-side electrode 111 is connected to the transmission line pattern 107, an output-side electrode 112 is connected to the transmission line pattern 109, and the input-side electrode 111 is connected to the gate of the internal matching FET 100. The output side electrode 112 is an internal matching type FE
A drain terminal of T100, and a metal package 101
Are the source terminals of the internally matched FET 100.

The transmission line pattern 107 is formed by a wiring pattern for connecting the input electrode 111 to the FET chip 104 and a wiring pattern for connecting the input electrode 111 to the FET chip 105. In each wiring pattern, a sheet resistor 113 is formed so as to be connected between the input electrode 111 and the FET chip 104, and the sheet resistor 114 is connected to the input electrode 111 and the FE.
It is formed so as to be connected to the T chip 105. That is, the transmission line pattern 107 includes sheet resistors 113 and 114, a wiring pattern 115 that forms a pattern branched into two from the input-side electrode 111, and the FET chip 104 connected to the wiring pattern 115 via the sheet resistor 113. The wiring pattern 116 to be connected and the FET chip 105 via the sheet resistor 114 are connected to the wiring pattern 1.
15 and a wiring pattern 117 connected to the wiring pattern 117.

The internal matching type FET 100 has an input side electrode 1
11, a high-frequency signal is input to the FET chips 104 and 1 via the transmission line pattern 107.
05, respectively, and the FET chips 104 and 10
After being amplified by 5, the signal is output from the output side electrode 112 via the transmission line pattern 109, and the attenuation and reflection of the high-frequency signal generated in the process must be minimized. For this reason, the transmission line pattern 107 for transmitting the high-frequency signal
It is necessary to optimize the impedance of each of the transmission line patterns 107 and 109. In order to obtain a desired impedance, the transmission line patterns 107 and 109 form a complicated pattern in which the width of the wiring pattern is increased or decreased. doing. From this, the transmission line pattern 107
Are used to form an input-side matching circuit (hereinafter referred to as an input-side matching circuit).
Form an output-side matching circuit (hereinafter, referred to as an output-side matching circuit).

The internal matching FET 100 used in a circuit for amplifying a high-frequency signal has a high performance and a large amplification factor, but tends to cause unstable operation such as oscillation. In order to reduce the frequency, the sheet resistors 113 and 114 are formed as described above. The sheet resistors 113 and 114 attenuate the high-frequency signal input from the input electrode 111 to reduce the FET chips 104 and 105.
, The operation of the FET chips 104 and 105 is stabilized. In this case, the sheet resistor 1
The resistance values required by the internal matching FE
Depending on the characteristics of T100, it is usually 0.1-10Ω
It is about.

[0007]

SUMMARY OF THE INVENTION Internally Matched FET 10
0, the sheet resistor 1 constituting the input-side matching circuit
The elements 13 and 114 stabilize the operation of the FET chips 104 and 105 and, as a result, change the amplification factor as a signal amplifying element. Therefore, the sheet resistor 11
3 and 114 need to be formed with high precision so that the resistance value becomes a desired value. Sheet resistors 113 and 114
Is formed of a thin film of a metal nitride such as tantalum or tungsten formed on the high dielectric substrate 108,
The sheet resistance values of the sheet resistors 113 and 114 obtained in this way are several tens Ω / □. The width of the sheet resistors 113 and 114, that is, the length in the direction perpendicular to the direction in which the electric signal propagates, is determined by the transmission line pattern 107.
Is generally 1 mm or less for an amplifier that amplifies a high-frequency signal exceeding 1 GHz.

Here, in order to obtain a resistance value of 1 ± 0.1 Ω using a sheet resistor having a sheet resistance of 25 Ω / □ and a width of 1 mm in the sheet resistors 113 and 114, the length of the sheet resistor is required. Needs to be 0.04 ± 0.004 mm, but it has been difficult to secure such accuracy.
To change the amplification factor of the internally matched FET 100, the resistance values of the sheet resistors 113 and 114 may be changed. For this purpose, the entire wiring pattern of the transmission line pattern 107 of the input side matching circuit board 102 is changed. And it could not be done easily.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and a sheet resistor having a small resistance value can be easily obtained with high accuracy, and the resistance value of the sheet resistor can be easily determined. An object is to obtain a high-frequency signal transmission line that can be changed, and further to obtain a semiconductor device using the high-frequency signal transmission line.

[0010]

According to the high frequency signal transmission line of the present invention, at least one sheet-like resistor for adjusting the impedance of the transmission line is provided on a high frequency signal transmission line formed on a substrate. In the high-frequency signal transmission line, the transmission line sandwiching the sheet-shaped resistor is short-circuited at a part in the width direction, and at least one sheet-shaped resistor is bypassed for a part of the high-frequency signal flowing through the transmission line. A bypass line is provided.

Further, in the high-frequency signal transmission line according to the present invention, in claim 1, the bypass line is formed by a plurality of bypass lines.

Further, in the high-frequency signal transmission line according to the present invention, in claim 2, each of the bypass lines is provided at a distance of at least １ ／ of the width of the transmission line.

Further, in the high-frequency signal transmission line according to the present invention, in any one of the first to third aspects, the bypass line is formed by a bonding wire.

Further, in the high-frequency signal transmission line according to the present invention, in any one of the first to third aspects, the bypass line is formed of a conductive material formed on a sheet-shaped resistor. is there.

Further, the semiconductor device according to the present invention includes a high-frequency signal transmission line in which at least one sheet-shaped resistor for adjusting the impedance of the transmission line is provided on the high-frequency signal transmission line formed on the substrate. In a semiconductor device provided with a bypass, a transmission line sandwiching the sheet-shaped resistor is short-circuited at a part in the width direction, and at least one sheet-shaped resistor is bypassed for a part of a high-frequency signal flowing through the transmission line. A line is provided.

Further, in the semiconductor device according to the present invention, in claim 6, the bypass line is formed by a plurality of bypass lines.

Further, in the semiconductor device according to the present invention, in claim 7, each of the bypass lines is provided at a distance of at least １ ／ of the width of the transmission line.

Further, in the semiconductor device according to the present invention, in any one of the sixth to eighth aspects, the bypass line is formed by a bonding wire.

Further, in the semiconductor device according to the present invention, in any one of claims 6 to 8, the bypass line is formed of a conductive material formed on a sheet-shaped resistor.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail based on an embodiment shown in the drawings. Embodiment 1 FIG. FIG. 1 is a plan view showing an example of the internal structure of a semiconductor device using a high-frequency signal transmission line according to the first embodiment of the present invention. FIG. 1 shows an internal matching FET as an example. In FIG. 1, an internally matched FET 1 for amplifying a high-frequency signal includes a metal package 2 formed by, for example, gold plating on copper, an input side matching circuit board 3, an output side matching circuit board 4, and FET chips 5 and 6. Is formed. The input side matching circuit board 3 and the output side matching circuit board 4 are connected to the FET chips 5 and 6 by bonding wires 7, respectively.

Each of the input side matching circuit board 3 and the output side matching circuit board 4 has a transmission line pattern using a microstrip line, for example, formed on a high dielectric constant substrate. That is, the input side matching circuit board 3 is formed of the high dielectric constant board 9 on which the transmission line pattern 8 is formed,
The output side matching circuit board 4 is formed of a high dielectric constant board 11 on which a transmission line pattern 10 is formed. The transmission line pattern 8 is electrically connected to the input electrode 13 by using a ribbon 12 made of, for example, gold. Similarly, the transmission line pattern 10 is made of a ribbon 14 made of, for example, gold. Is electrically connected to the electrode 15 on the output side. The input side electrode 13 forms the gate terminal of the internal matching type FET 1, and the output side electrode 15
1 is a drain terminal, and the metal package 2 is a source terminal of the internally matched FET 1.

The transmission line pattern 8 includes a wiring pattern for connecting the input electrode 13 to the FET chip 5 and a wiring pattern for connecting the input electrode 13 to the FET chip 6. In each wiring pattern, a sheet resistor 16 is formed so as to be connected between the input electrode 13 and the FET chip 5, and a sheet resistor 17 is connected between the input electrode 13 and the FET chip 6. It is formed so that it may be connected to. That is, the transmission line pattern 8 includes a wiring pattern 18 that forms a pattern branched from the input electrode 13 into two, and a wiring pattern that connects the FET chip 5 to the wiring pattern 18 via the bonding wire 7 and the sheet resistor 16. 19 and a wiring pattern 20 for connecting the FET chip 6 to the wiring pattern 18 via the bonding wire 7 and the sheet resistor 17.

Further, in order for an electric signal to bypass the sheet resistor 16, the wiring patterns 18 and 19 are electrically connected by bypass wires 21 and 22 formed of conductive wires. Similarly, the electric signal is applied to the sheet resistor 1
7 to bypass the wiring patterns 18 and 20
Are electrically connected by bypass wires 23 and 24 formed of conductive wires, and are connected to bypass wires 21 to 24.
For example, a bonding wire is used. As described above, the transmission line pattern 8 is formed by the sheet resistors 16 and 17.
, Wiring patterns 18 to 20, and bypass wires 21 to
24 to form the high-frequency signal transmission line according to the first embodiment. In addition, the bypass wires 21 to 21
24 forms a bypass line.

A high-frequency signal is input to the internal matching type FET 1 from the input electrode 13, and the high-frequency signal is input to the FET chips 5 and 6 via the transmission line pattern 8 and amplified by the FET chips 5 and 6. After that, the signal is output from the output-side electrode 15 via the transmission line pattern 10, and the attenuation and reflection of the high-frequency signal generated in the process must be minimized. For this reason, it is necessary to optimize the impedance of the transmission line patterns 8 and 10 for transmitting the high-frequency signal in each part, and in order to obtain a desired impedance, the transmission line patterns 8 and 10 have a large wiring pattern width. It forms a complicated pattern that is thin or thin. From this, the transmission line pattern 8 is
The transmission line pattern 10 forms an input-side impedance matching circuit (hereinafter, referred to as an input-side matching circuit).
This is called an output-side matching circuit).

The internally matched FET 1 used in a circuit for amplifying a high-frequency signal has high performance and a large amplification factor, but tends to cause unstable operation such as oscillation. In order to reduce this, the sheet resistors 16 and 17 are formed as described above. The sheet resistors 16 and 17 attenuate the high-frequency signal input from the input electrode 13 and input the high-frequency signal to the FET chips 5 and 6. Therefore, the operation of the FET chips 5 and 6 is stabilized.

When the electric signal flowing through the transmission line pattern 8 is a DC signal, the combined conductance of the sheet resistor 16 and the bypass wires 21 and 22 is as follows.
According to Ohm's law, the sum of the conductances of the sheet resistor 16, the bypass wire 21, and the bypass wire 22 is obtained. That is, when the resistance values of the bypass wires 21 and 22 are sufficiently small, almost all of the electric signals flow through the bypass wires 21 and 22, so that the sheet resistor 16 is short-circuited by the bypass wires 21 and 22 to prevent a direct current signal from flowing. The resistance becomes almost zero. The same applies to the sheet resistor 17 and the bypass wires 23 and 24.

However, when the electric signal flowing through the transmission line pattern 8 is a high-frequency signal, the electric signal has the property of a radio wave, and the higher the frequency, the higher the straightness. For this reason, even if the bypass wires 21 and 22 that bypass the sheet resistor 16 are present, the electric signal flows through the sheet resistor 16 if the straightness of the electric signal is superior. That is, of the high-frequency signals flowing from the input-side electrode 13, the high-frequency signals flowing away from the bypass wires 21 and 22 in the sheet resistor 16 flow through the sheet resistor 16 and pass near the bypass wires 21 and 22. The flowing high-frequency signal flows through the bypass wires 21 and 22.

For this reason, the resistance value for the high frequency signal is
The average value of the resistance in the part where the high-frequency signal flows,
Resistance value of sheet resistor 16 and bypass wires 21 and 22
And an effective value between the resistance values. Thus, by providing the bypass wires 21 and 22, the impedance of the transmission line through which the high-frequency signal flows can be changed without changing the resistance value of the sheet resistor 16. This means that the sheet resistor 17 and the bypass wires 23, 24
The same applies to and.

FIG. 2 is a diagram showing an example of a peripheral portion of the sheet resistor 16 and shows an example of a connection position of the bypass wires 21 and 22. The same applies to the peripheral portion of the sheet resistor 17 as in FIG. 2, the sheet resistor 16 and the wiring pattern 18,
Reference numeral 19 is formed symmetrically in the direction in which the electric signal flows, and the sheet resistor 16 is formed in a portion where the width of the wiring pattern 18 is increased. Further, the bypass wires 21 and 22 are provided at positions deviated in one direction from the center of the width of the sheet resistor 16 (the direction perpendicular to the direction in which the electric signal flows).

In such a case, the bypass wires 21 and
2 is provided at a distance of at least １ ／ of the width a of the transmission line pattern 8 from one of the ends in the transmission line pattern 8 shown in FIG.
Is less than or equal to 1/10 of the width a of the transmission line pattern 8, by providing the bypass wires 21 and 22,
The impedance of the transmission line through which the high-frequency signal including the sheet resistor 16 and the wiring patterns 18 and 19 flows can be effectively changed, and the resistance value of the sheet resistor 16 is substantially reduced.

For example, when it is necessary to set the impedance of the transmission line, through which the high-frequency signal including the sheet resistor 16 and the wiring patterns 18 and 19 flows, to 1 ± 0.1 Ω, a 5 Ω resistor is used as the sheet resistor 16. When a sheet resistor having a sheet resistance value of 25 Ω / □ and a width a of 1 mm is used, the length b of the sheet resistor 16 is 0.2 ± 0.02 mm, and the manufacturing accuracy can be improved.

Here, the range in which a single bypass wire can bypass a high-frequency signal on a transmission line is limited, and the range is set in a direction perpendicular to the direction in which an electric signal flows, with the target being around the bypass wire. Formed. From this, if the interval between the bypass wires 21 and 22 is too narrow, it becomes the same as the case where only one of the bypass wires 21 or 22 is provided, but one of the bypass wires 21 or 22 is disconnected. However, it is possible to prevent the impedance of the transmission line through which the high-frequency signal flows from changing, thereby preventing the substantial resistance value of the sheet resistor 16 from changing. Further, by changing the interval between the bypass wires 21 and 22, the impedance of the transmission line when a high-frequency signal composed of the sheet resistor 16 and the wiring patterns 18 and 19 flows can be changed. The resistance value can be changed.

FIG. 3 is a diagram showing another example of the peripheral portion of the sheet resistor 16, and shows another example of the connection position of the bypass wires 21 and 22. The sheet resistor 17
3 is similar to that of FIG. 3, and the description thereof will be omitted. In FIG. 3, the sheet resistor 16 and the wiring patterns 18 and 19 are formed symmetrically in the direction in which the electric signal flows, and the sheet resistor 16 is formed in a portion where the width of the wiring pattern 18 is increased. ing. The bypass wires 21 and 22 are provided in directions opposite to the center of the width of the sheet resistor 16 (direction perpendicular to the direction in which the electric signal flows).

In such a case, the bypass wires 21 and 22 are provided at a distance of at least １ ／ of the width a of the transmission line pattern in the transmission line pattern 8 shown in FIG. Length b is transmission line pattern 8
Is less than 1/10 of the width a of the bypass wire 2
By providing 1 and 22, the sheet resistor 16,
The impedance of the transmission line through which the high-frequency signal composed of the wiring patterns 18 and 19 flows can be effectively changed, which means that the resistance value of the sheet resistor 16 has been substantially reduced.

In FIGS. 2 and 3, the sheet resistor 16 and the wiring patterns 18 and 19 are formed symmetrically with respect to the direction in which the electric signal flows, but are asymmetric with respect to the direction in which the electric signal flows. Will be described. FIG. 4 is a diagram illustrating another example of the peripheral portion of the sheet resistor 16, and illustrates another example of a connection position of the bypass wires 21 and 22. The sheet resistor 17
4 is the same as that in FIG. 4, and the description thereof will be omitted. In FIG. 4, the sheet resistor 16 and the wiring patterns 18 and 19 are formed asymmetrically with respect to the direction in which the electric signal flows, and the sheet resistor 16 is formed in a portion where the width of the wiring pattern 18 is increased. Have been. In such a case, there is a difference depending on a place in the electric signal flowing through the sheet resistor 16 as compared with the case where the electric signal is formed symmetrically in the direction in which the electric signal flows.

Here, the distance from the center Q of the flow of the electric signal to one end of the transmission line pattern 8 is E, and the distance from the other end of the transmission line pattern 8 is F. For example, if F is E
When the transmission line pattern 8 is longer than the transmission line pattern 8, the high-frequency signal flows more toward the E side than the F side of the transmission line pattern 8. From this,
Connect the bypass wires 21 and 22 to the F
By providing the sheet resistor 16 on the side, the impedance of the transmission line when a high-frequency signal composed of the sheet resistor 16 and the wiring patterns 18 and 19 flows can be changed more finely, and the resistance value of the sheet resistor 16 can be reduced more finely. Can be done.

In the case of FIG. 4, as in the case of FIG. 2, the transmission line pattern 8 shown in FIG.
Bypassing the bypass wires 21 and 22 from one end of the transmission line pattern 8 to the width a of the transmission line pattern 8
When the length b of the sheet resistor 16 is equal to or less than 1/10 of the width a of the transmission line pattern 8, the bypass wires 21 and 22 are provided. 16, the impedance of the transmission line through which the high frequency signal composed of the wiring patterns 18 and 19 flows can be effectively changed.

As described above, the high-frequency signal transmission line according to the first embodiment of the present invention includes the bypass wire 2 that bypasses the sheet resistor 16 provided in the transmission line pattern 8.
1 and 22 are provided with bypass wires 23 and 24 for bypassing the sheet resistor 17 provided in the transmission line pattern 8, respectively. Thus, a small resistance value, which has been difficult to form the sheet resistor, can be obtained substantially easily with high accuracy, and the substantial resistance value of the sheet resistor can be easily changed. Since the impedance of the high-frequency signal transmission line can be easily changed, the manufacturing efficiency can be improved and the cost can be reduced. Further, by using the high-frequency signal transmission line of the first embodiment for the input-side matching circuit of the internal matching FET for amplifying the high-frequency signal, the impedance in the input-side matching circuit can be easily and finely changed, and the manufacturing efficiency can be improved. And the degree of freedom in designing a semiconductor device such as an internal matching FET using a high-frequency signal transmission line can be improved.

Embodiment 2 In the first embodiment,
Between the wiring patterns 18 and 19;
And 20, one sheet resistor is formed between the wiring patterns 18 and 19, and between the wiring patterns 18 and 20, a plurality of sheet resistors are formed in series. The case where there is is described as Embodiment 2 of the present invention. FIG. 5 shows Embodiment 2 of the present invention.
6 is a plan view showing an example of the internal structure of the semiconductor device using the high-frequency signal transmission line in FIG. 5, and FIG. 5 shows an internal matching FET as an example, as in the first embodiment. In FIG. 5, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted and only the differences from FIG. 1 will be described.

The difference between FIG. 5 and FIG. 1 is that the wiring pattern of the transmission line pattern 8 has changed, and that a plurality of sheet resistors 31 to 33 are provided between the wiring patterns 18 and 19.
However, a plurality of sheet resistors 34 to 36 are formed between the wiring patterns 18 and 20, respectively. Further, the sheet resistors 31 and 34 are short-circuited by a plurality of conductive wires and do not form a resistance to high-frequency signals, and the sheet resistors 32, 33, 35 and 36 are each bypassed by a plurality of bypass wires. I have. For these reasons, the transmission line pattern 8 in FIG.
1 was used as the wiring pattern 38, the wiring pattern 19 in FIG. 1 was used as the wiring pattern 39, and the wiring pattern 20 in FIG. Accordingly, the input side matching circuit board 3 of FIG. 1 is used as the input side matching circuit board 43, and the internal matching type FET 1 of FIG.
And

In FIG. 5, an internal matching type FET 45 for amplifying a high frequency signal is formed by a metal package 2, an input side matching circuit board 43, an output side matching circuit board 4, and FET chips 5 and 6. The input side matching circuit board 43 and the output side matching circuit board 4 are connected to the FET chips 5 and 6 by bonding wires 7, respectively. The input-side matching circuit board 43 has a transmission line pattern using, for example, a microstrip line formed on a high-permittivity substrate. That is, the input side matching circuit board 43 is formed of the high dielectric constant board 9 on which the transmission line pattern 37 is formed. The transmission line pattern 37 is electrically connected to the input electrode 13 using the ribbon 12. The input side electrode 13 forms a gate terminal of the internal matching FET 45,
The output side electrode 15 forms a drain terminal of the internal matching FET 45, and the metal package 2 forms a source terminal of the internal matching FET 45.

The transmission line pattern 37 is formed of a wiring pattern for connecting the input electrode 13 to the FET chip 5 and a wiring pattern for connecting the input electrode 13 to the FET chip 6. In each of the wiring patterns, sheet resistors 31 to 33 connected in series are connected to the input side electrode 13 and the F side.
Sheet resistors 34 to 36 connected in series are formed so as to be connected between the ET chip 5 and the input side electrode 13 and the FET chip 6. . That is, the transmission line pattern 37 includes a wiring pattern 38 forming a pattern branched into two from the input-side electrode 13 and a sheet resistor 31 connected in series.
And a wiring pattern 40 for connecting the FET chip 6 to the wiring pattern 38 via sheet resistors 34 to 36 connected in series. doing.

Further, the sheet resistor 31 is connected to the wiring pattern 3.
8 and the sheet resistors 31 and 32 are connected by a wiring pattern 47. Also, the sheet resistor 3
3 is connected to a wiring pattern 39, and the sheet resistors 32 and 33 are connected by a wiring pattern 48. Similarly, the sheet resistor 34 is connected to the wiring pattern 38, and the sheet resistors 34 and 35 are connected to the wiring pattern 49.
Connected by Further, the sheet resistor 36 is connected to the wiring pattern 40 and the sheet resistors 35 and 36 are connected.
Are connected by a wiring pattern 50.

Each of the sheet resistors 31 and 34 is short-circuited by a plurality of bonding wires 51 so as not to make a resistance to a high-frequency signal. Further, in order for the electric signal to bypass the sheet resistor 32, the wiring patterns 48 and 47 are electrically connected by bypass wires 52 and 53 formed of conductive wires, and the electric signal passes through the sheet resistor 33. Wiring pattern 3 to bypass
9 and 48 are electrically connected by bypass wires 54 and 55 formed of conductive wires.

Similarly, in order for the electric signal to bypass the sheet resistor 35, the wiring patterns 48 and 49 are electrically connected by bypass wires 56 and 57 formed of conductive wires. The wiring patterns 40 and 50 are electrically connected to each other by bypass wires 58 and 59 formed of conductive wires. As the bypass wires 52 to 59, for example, bonding wires are used. As described above, the transmission line pattern 37 includes the sheet resistors 31 to 36.
And the wiring patterns 38 to 40, 47 to 50, the bonding wires 51, and the bypass wires 52 to 59 to form the high-frequency signal transmission line according to the second embodiment. The bypass wires 52 to 59 form a bypass line.

FIG. 6 is a diagram showing an example of the periphery of the sheet resistors 31 to 33. Referring to FIG.
The structure around .about.33 will be described in more detail. In addition,
The peripheral portions of the sheet resistors 34 to 36 are the same as those in FIG. In FIG. 6, sheet resistors 31 to 33 and wiring patterns 38, 39, 47,
48 are symmetrical in the direction in which the electric signal flows and are formed with the same width.
Are formed in portions where the width of the wiring pattern 38 is the same.

The bonding wires 51 are electrically connected to the wiring patterns 38 and 47 so as to short-circuit the sheet resistor 31, respectively, and are spaced so that the sheet resistor 31 does not make a resistance to a high-frequency signal. , Respectively. The bypass wires 52 and 53 are provided at positions deviated in one direction from the center of the width of the sheet resistor 32 (the direction perpendicular to the direction in which the electric signal flows). In addition, the bypass wires 54 and 55 are, for example, from the center of the width of the sheet resistor 33 to the bypass wires 52 and 53.
Is provided at a position deviated in a direction opposite to the direction in which is provided.

In this manner, the high-frequency signal flowing through the wiring pattern 38 flows through each bonding wire 51 without flowing through the sheet resistor 31. Further, most of the high-frequency signals flowing through the bypass wires 52 and 53 flow through the sheet resistor 33,
Most of the high frequency signals flowing through 4 and 55 take a path flowing through the sheet resistor 32.

In the case described above, the bypass wires 52 and 53 and the bypass wires 54 and 55 are formed from one end of the transmission line pattern 37 shown in FIG. The length “b” of the sheet resistor 32 and the length “c” of the sheet resistor 33 are provided at a distance of four or more, respectively.
Is less than 1/10 of the width a of the bypass wire 5
2 to 55, the sheet resistors 32 and 3 are provided.
3, and the impedance of the transmission line through which the high-frequency signal including the wiring patterns 38, 39, 47, and 48 flows can be effectively changed, and the sheet resistors 32 and 3 can be substantially changed.
This means that the resistance value of No. 3 has been reduced.

As described above, in the high-frequency signal transmission line according to the second embodiment of the present invention, the bypass wires 52 to 55 that bypass the plurality of sheet resistors 32 and 33 provided in the transmission line pattern 37 are connected to the transmission line pattern. 37 are provided with bypass wires 56 to 59 for bypassing the plurality of sheet resistors 35 and 36 provided respectively. Thus, a small resistance value, which has been difficult to form the sheet resistor, can be obtained substantially easily with high accuracy, and the substantial resistance value of the sheet resistor can be easily changed. Since the resistance value of the high-frequency signal transmission line can be easily changed within a limited range, manufacturing efficiency can be improved and cost can be reduced. Further, by using the high-frequency signal transmission line according to the second embodiment for the input-side matching circuit of the internal matching FET for amplifying the high-frequency signal, the impedance in the input-side matching circuit can be easily and finely changed, and the manufacturing efficiency can be improved And the degree of freedom in designing a semiconductor device such as an internal matching FET using a high-frequency signal transmission line can be improved.

Embodiment 3 FIG. In the first and second embodiments, the sheet resistor is bypassed by using a conductive wire. However, when the integration degree of the semiconductor device is increased, there is a problem that there is no space for providing the bypass wire. Therefore, the third embodiment of the present invention is configured to change the substantial resistance value of the sheet resistor for a high-frequency signal without using a wire.

FIG. 7 is a plan view showing an example of the internal structure of a semiconductor device using a high-frequency signal transmission line according to the third embodiment of the present invention.
An internal matching FET is shown as an example. In FIG. 7, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted and only the differences from FIG. 1 will be described.

The difference between FIG. 7 and FIG. 1 is that the sheet resistors 16 and 17 of FIG. 1 are formed by alternately forming long and short portions in length. The sheet resistor 17 in FIG. 1 is replaced by a sheet resistor 62. Further, the wiring patterns 18 and 19 and the wiring patterns 18 and 20 are electrically connected by applying gold plating to necessary portions of the sheet resistors 61 and 62, respectively. 63
However, the sheet resistors 62 are provided with gold plating 64, respectively. Accordingly, the transmission line pattern 8 of FIG. 1 is used as a transmission line pattern 65, the input side matching circuit board 3 of FIG. 1 is used as an input side matching circuit board 66, and the internal matching type F of FIG.
ET1 is an internal matching FET 67.

In FIG. 7, an internal matching type FET 67 for amplifying a high-frequency signal is formed of a metal package 2, an input side matching circuit board 66, an output side matching circuit board 4, and FET chips 5 and 6. The input side matching circuit board 66 and the output side matching circuit board 4 are connected to the FET chips 5 and 6 by bonding wires 7, respectively. In the input side matching circuit board 66, a transmission line pattern using, for example, a microstrip line is formed on a high dielectric constant substrate. That is, the input side matching circuit board 66 is formed of the high dielectric constant board 9 on which the transmission line pattern 65 is formed. The transmission line pattern 65 is electrically connected to the input electrode 13 using the ribbon 12. The input side electrode 13 forms a gate terminal of the internally matched FET 67,
The output side electrode 15 forms the drain terminal of the internal matching FET 67, and the metal package 2 forms the source terminal of the internal matching FET 67.

The transmission line pattern 65 is formed of a wiring pattern for connecting the input electrode 13 to the FET chip 5 and a wiring pattern for connecting the input electrode 13 to the FET chip 6. In each wiring pattern, a sheet resistor 61 is formed so as to be connected between the input electrode 13 and the FET chip 5, and a sheet resistor 62 is formed between the input electrode 13 and the FET chip 6. It is formed so that it may be connected to. That is, the transmission line pattern 65
Is a wiring pattern 18 for forming a pattern branched into two from the input side electrode 13, a wiring pattern 19 for connecting the FET chip 5 to the wiring pattern 18 via the sheet resistor 61, and a wiring pattern 18 for connecting the FET chip 6 to the sheet resistor. And a wiring pattern 20 that is connected to the wiring pattern 18 via the wiring pattern 62.

Further, since the electric signal bypasses the sheet resistor 61, the wiring patterns 18 and 19 are electrically connected by gold plating 63 applied to a predetermined portion of the sheet resistor 61. Similarly, the electric signal is applied to the sheet resistor 62.
In order to bypass, the wiring patterns 18 and 20
Gold plating 64 applied to a predetermined portion of the sheet resistor 62
Are electrically connected. As described above, the transmission line pattern 65 includes the sheet resistors 61 and 62 and the wiring pattern 18.
20 and gold plating 63, 64 to form the high-frequency signal transmission line in the third embodiment. That is, the gold plating 63 has the same function as the bypass wires 21 and 22 in the first embodiment, and the gold plating 64 has the same function as the bypass wires 23 and 24 in the first embodiment. The gold plating 63 and 64 form a bypass line.

FIG. 8 is a diagram showing an example of a peripheral portion of the sheet resistor 61, and FIG. 9 is a cross-sectional view showing a ZZ cross section in FIG. The structure around the sheet resistor 61 will be described in more detail. Note that the peripheral portion of the sheet resistor 62 is also the same as in FIGS. 8 and 9, and a description thereof will be omitted. 8 and 9, the sheet resistor 61 and the wiring patterns 18 and 19 are
The sheet resistors 61 are symmetrical and have the same width in the direction in which the electric signal flows, and the sheet resistor 61 is formed in a portion where the width of the wiring pattern 18 is increased. Further, the gold plating 63 is provided at a position deviated in one direction from the center of the width of the sheet resistor 61 (the direction perpendicular to the direction in which the electric signal flows).

The sheet resistor 61 has a long portion 71.
And the short portions 72 are alternately connected. In the manufacturing process, all the short portions 72 are plated with gold so as to electrically connect the wiring patterns 18 and 19. Further, in a manufacturing process, unnecessary portions of the gold plating applied to all the short portions 72 are cut by a method such as thermal fusing by a laser beam or melting by a chemical, and a predetermined portion of the sheet resistor 61 is cut. Gold plating 63 is formed so as to be short-circuited.

In such a case, the gold plating 63 is provided at a distance of at least １ ／ of the width a of the transmission line pattern 65 from one of the ends in the transmission line pattern 65 shown in FIG. When the length b of the resistor 61 is 1/10 or less of the width a of the transmission line pattern 65, the provision of the gold plating 63 allows the sheet resistor 61,
The impedance of the transmission line through which the high-frequency signal composed of the wiring patterns 18 and 19 flows can be effectively changed, which means that the resistance value of the sheet resistor 61 is substantially reduced. In the third embodiment, the case shown in FIG. 2 in the first embodiment has been described as an example. However, the case shown in FIGS. 3 and 4 in the first embodiment and the case shown in the second embodiment And the description is omitted.

As described above, the high-frequency signal transmission line according to the third embodiment of the present invention includes a gold plating 63 that bypasses the sheet resistor 61 provided in the transmission line pattern 65.
To the sheet resistor 6 provided on the transmission line pattern 65.
Gold plating 64 that bypasses No. 2 was provided. Thus, the same effect as in the first embodiment can be obtained, and the disconnection of the bypass line due to a physical impact or the like can be prevented, and the reliability can be improved. Furthermore, by using the high-frequency signal transmission line of the third embodiment for the input side matching circuit of the internal matching FET for amplifying the high-frequency signal, the same effect as that of the first embodiment can be obtained, and the bypass can be obtained. It is possible to reduce performance degradation caused by an increase in an extra reactance component due to a wire, and it can be used for a highly integrated semiconductor integrated circuit.

[0061]

According to the first aspect of the present invention, a high-frequency signal transmission line comprises:
By providing a bypass line that bypasses a sheet-shaped resistor provided on a transmission line, a small resistance value, which has been difficult in forming a sheet-shaped resistor, can be substantially easily obtained with high accuracy. In addition, the substantial resistance value of the sheet-shaped resistor can be easily changed, and the impedance in the high-frequency signal transmission line can be easily changed, so that the manufacturing efficiency can be improved and the cost can be reduced. .

According to a second aspect of the present invention, in the high frequency signal transmission line according to the first aspect, since the bypass line is formed by a plurality of bypass lines, even if one of the bypass lines is interrupted due to disconnection or the like, It is possible to prevent a substantial resistance value of the sheet-shaped resistor from changing, and prevent a change in impedance of a transmission line through which a high-frequency signal flows.

According to a third aspect of the present invention, in the high frequency signal transmission line according to the second aspect, each of the bypass lines is provided at a distance of at least １ ／ of the width of the transmission line. Therefore, by changing the interval between the bypass lines, a small resistance value, which has been difficult to form a sheet-shaped resistor, can be substantially easily obtained with high precision. Since the substantial resistance value of the body can be easily changed and the impedance of the high-frequency signal transmission line can be easily changed, the manufacturing efficiency can be improved and the cost can be reduced.

According to a fourth aspect of the present invention, in the high frequency signal transmission line according to the first to third aspects, the bypass line is formed by a bonding wire. From this, the substantial resistance value of the sheet-shaped resistor can be easily changed, and the impedance in the high-frequency signal transmission line can be easily changed, so that the manufacturing efficiency can be improved and the cost can be reduced. it can.

According to a fifth aspect of the present invention, in the high frequency signal transmission line according to any one of the first to third aspects, the bypass line is formed of a conductive material formed on a surface of a sheet-shaped resistor. Therefore, disconnection of the bypass line due to physical impact or the like can be prevented, and reliability can be improved.

According to the semiconductor device of the present invention, by providing a bypass line for bypassing a sheet-like resistor provided on a transmission line, a small resistance value which is difficult to form a sheet-like resistor is provided. Can be obtained substantially easily with high accuracy, the substantial resistance value of the sheet-shaped resistor can be easily changed, and the impedance in the high-frequency signal transmission line can be easily changed. In the semiconductor device using the signal transmission line, the manufacturing efficiency can be improved and the degree of freedom in design can be improved.

According to a seventh aspect of the present invention, in the semiconductor device according to the sixth aspect, the bypass line is formed by a plurality of bypass lines. Can be prevented from changing, and the impedance of the transmission line through which the high-frequency signal flows can be prevented from changing.

The semiconductor device according to the eighth aspect is the seventh aspect.
In the above, each of the bypass lines has a width of 1 /
Each is provided at a distance of four or more. Therefore, by changing the interval between the bypass lines, a small resistance value, which has been difficult to form a sheet-shaped resistor, can be substantially easily obtained with high precision. The substantial resistance value of the body can be easily changed, and the impedance in the high-frequency signal transmission line can be easily changed. Therefore, the impedance in the high-frequency signal transmission line can be easily changed,
The manufacturing efficiency is improved, and the degree of freedom in design can be improved.

The semiconductor device according to the ninth aspect provides the semiconductor device according to the sixth aspect.
According to the present invention, the bypass line is formed of a bonding wire. From this, the substantial resistance value of the sheet-shaped resistor can be easily changed, and the impedance of the high-frequency signal transmission line can be easily changed. The efficiency can be improved and the degree of freedom in design can be improved.

According to a tenth aspect of the present invention, in the semiconductor device according to the sixth to eighth aspects, the bypass line is formed of a conductive material formed on a surface of a sheet-shaped resistor.
Therefore, disconnection of the bypass line due to physical impact or the like can be prevented, and reliability can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing an example of an internal structure of a semiconductor device using a high-frequency signal transmission line according to a first embodiment of the present invention.

FIG. 2 is a diagram showing an example of a peripheral portion of a sheet resistor 16 in FIG.

FIG. 3 is a diagram showing another example of a peripheral portion of a sheet resistor 16 in FIG. 1;

FIG. 4 is a diagram showing another example of a peripheral portion of the sheet resistor 16 in FIG.

FIG. 5 is a plan view showing an example of an internal structure of a semiconductor device using a high-frequency signal transmission line according to a second embodiment of the present invention.

FIG. 6 is a diagram illustrating an example of a peripheral portion of sheet resistors 31 to 33 in FIG. 5;

FIG. 7 is a plan view showing an example of an internal structure of a semiconductor device using a high-frequency signal transmission line according to a third embodiment of the present invention.

FIG. 8 is a diagram illustrating an example of a peripheral portion of a sheet resistor 61 in FIG. 7;

FIG. 9 is a sectional view showing a ZZ section in FIG. 8;

FIG. 10 is a plan view showing an internal structure of a conventional example of a semiconductor device using a high-frequency signal transmission line.

[Explanation of symbols]

1,45,67 Internally matched FET, 3,43,66
Input side matching circuit board, 8, 37, 65 Transmission line pattern, 9 High permittivity board, 16, 17, 32, 3
3,35,36,61,62 Sheet resistor, 18 ~
20, 38-40, 47-50 Wiring pattern, 21
~ 24,52 ~ 59 Bypass wire, 63,64 Gold plated

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01P 5/08 H03F 3/60 H03F 3/60 H01P 5/12 D // H01P 5/12

Claims (10)

[Claims] 1. A high-frequency signal transmission line in which at least one sheet-shaped resistor for adjusting the impedance of the transmission line is provided on a transmission line of a high-frequency signal formed on a substrate, wherein the sheet-shaped resistor is provided. A high-frequency signal transmission line, characterized in that a short-circuited part of the sandwiched transmission line is widthwise provided and a bypass line is provided to bypass at least one sheet-shaped resistor for a part of the high-frequency signal flowing through the transmission line. 2. The high-frequency signal transmission line according to claim 1, wherein the bypass line is formed by a plurality of bypass lines. 3. The high-frequency signal transmission line according to claim 2, wherein each of the bypass lines is provided at a distance of at least １ ／ of the width of the transmission line. 4. The apparatus according to claim 1, wherein the bypass line is formed of a bonding wire.
The high-frequency signal transmission line according to any one of the above. 5. The high-frequency signal transmission line according to claim 1, wherein the bypass line is formed of a conductive material formed on a sheet-shaped resistor. 6. A semiconductor device comprising: a high-frequency signal transmission line in which at least one sheet-shaped resistor for adjusting the impedance of the transmission line is provided on a transmission line of a high-frequency signal formed on a substrate. A transmission line sandwiching the resistor is short-circuited at a portion in the width direction, and a bypass line is provided to bypass at least one sheet-shaped resistor for a part of the high-frequency signal flowing through the transmission line. Semiconductor device. 7. The semiconductor device according to claim 6, wherein said bypass line is formed by a plurality of bypass lines. 8. The semiconductor device according to claim 7, wherein each of the bypass lines is provided at a distance of at least ４ of the width of the transmission line. 9. The apparatus according to claim 6, wherein said bypass line is formed by a bonding wire.
The semiconductor device according to any one of the above. 10. The semiconductor device according to claim 6, wherein said bypass line is formed of a conductive material formed on a sheet-shaped resistor.