JPS6490602A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6490602A
JPS6490602A JP62248314A JP24831487A JPS6490602A JP S6490602 A JPS6490602 A JP S6490602A JP 62248314 A JP62248314 A JP 62248314A JP 24831487 A JP24831487 A JP 24831487A JP S6490602 A JPS6490602 A JP S6490602A
Authority
JP
Japan
Prior art keywords
capacitor
chip
pattern
variance
plural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62248314A
Other languages
Japanese (ja)
Inventor
Yasushi Ose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62248314A priority Critical patent/JPS6490602A/en
Publication of JPS6490602A publication Critical patent/JPS6490602A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain excellent matching state at all times by providing a capacitor minute adjustment auxiliary pattern to a chip capacitor of an internal matching circuit so as to absorb the variance in the impedance of a bonding wire or a GaAs MESFET chip. CONSTITUTION:A rear face 12 of a dielectric base 11 of a chip capacitor 4 is formed fully as a conductor to form one electrode. The front face is formed with a main electrode pattern 7 being a major capacitor and two auxiliary patterns 8 at both sides respectively. The gate pad and the pattern 7 on the chip 3 and the film circuit wiring 5 on the substrate 1 in the semiconductor device where the GaAs MESFET chip 3 and the capacitor 4 are arranged between the input side and output side alumina substrate 1, 2 are connected by plural bonding wires 6 to cause the variance in the inductance. It is adjusted and compensated by properly cutting off the plural jumpers 9 connecting the patterns 7, 8.
JP62248314A 1987-09-30 1987-09-30 Semiconductor device Pending JPS6490602A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62248314A JPS6490602A (en) 1987-09-30 1987-09-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62248314A JPS6490602A (en) 1987-09-30 1987-09-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6490602A true JPS6490602A (en) 1989-04-07

Family

ID=17176232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62248314A Pending JPS6490602A (en) 1987-09-30 1987-09-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6490602A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0411919A2 (en) * 1989-08-04 1991-02-06 Matsushita Electric Industrial Co., Ltd. Matching circuit for high frequency transistor
US5476967A (en) * 1993-07-27 1995-12-19 Junsei Chemical Co., Ltd. Production method of organic solvent solution of dichloroglyoxime
US5519141A (en) * 1993-07-21 1996-05-21 Junsei Chemical Co., Ltd. Intermolecular compound and production method thereof
JP2015088975A (en) * 2013-10-31 2015-05-07 三菱電機株式会社 Amplifier

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5273676A (en) * 1975-12-15 1977-06-20 Nec Corp High output transistor device for high frequency

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5273676A (en) * 1975-12-15 1977-06-20 Nec Corp High output transistor device for high frequency

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0411919A2 (en) * 1989-08-04 1991-02-06 Matsushita Electric Industrial Co., Ltd. Matching circuit for high frequency transistor
US5519141A (en) * 1993-07-21 1996-05-21 Junsei Chemical Co., Ltd. Intermolecular compound and production method thereof
US5476967A (en) * 1993-07-27 1995-12-19 Junsei Chemical Co., Ltd. Production method of organic solvent solution of dichloroglyoxime
JP2015088975A (en) * 2013-10-31 2015-05-07 三菱電機株式会社 Amplifier

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