JPS62158917U - - Google Patents
Info
- Publication number
- JPS62158917U JPS62158917U JP4502486U JP4502486U JPS62158917U JP S62158917 U JPS62158917 U JP S62158917U JP 4502486 U JP4502486 U JP 4502486U JP 4502486 U JP4502486 U JP 4502486U JP S62158917 U JPS62158917 U JP S62158917U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- outside
- source electrode
- resistor
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
Description
第１図は本考案の一実施例図、第２図は第１図
の伝達アドミタンス特性図、第３図は従来例図、
第４図は第３図の特性図である。
Fig. 1 is a diagram of an embodiment of the present invention, Fig. 2 is a transfer admittance characteristic diagram of Fig. 1, and Fig. 3 is a diagram of a conventional example.
FIG. 4 is a characteristic diagram of FIG. 3.
Claims (1)
果トランジスタにおいて、第２ゲートが、ソース
電極に接続され、また第１ゲートが、任意の抵抗
によりソース電極に接続され、かつ、これと異な
る抵抗により外部へ引き出し、また、ドレイン、
ソース第１ゲートが外部へ引き出される基本回路
を有し、この基本回路が並列になる様な、ペレツ
トを有することを特徴とする半導体装置。 In an insulated field effect transistor having a first gate and a second gate, the second gate is connected to the source electrode, and the first gate is connected to the source electrode by an arbitrary resistor and by a different resistor. Pull out to the outside, or drain,
1. A semiconductor device comprising a pellet having a basic circuit whose source first gate is drawn out to the outside, and in which the basic circuits are arranged in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4502486U JPS62158917U (en) | 1986-03-26 | 1986-03-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4502486U JPS62158917U (en) | 1986-03-26 | 1986-03-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62158917U true JPS62158917U (en) | 1987-10-08 |
Family
ID=30863384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4502486U Pending JPS62158917U (en) | 1986-03-26 | 1986-03-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62158917U (en) |
-
1986
- 1986-03-26 JP JP4502486U patent/JPS62158917U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS591199U (en) | semiconductor memory element | |
| JPS5948142U (en) | MOS input buffer circuit with hysteresis characteristics | |
| JPS62158917U (en) | ||
| JPS5826224U (en) | variable impedance circuit | |
| JPH01126630U (en) | ||
| JPS62201951U (en) | ||
| JPS5980950U (en) | Relay contact protection circuit | |
| JPS6454333U (en) | ||
| JPS62122358U (en) | ||
| JPS6224333U (en) | ||
| JPS61102057U (en) | ||
| JPS6150328U (en) | ||
| JPS6221555U (en) | ||
| JPS6083247U (en) | Microwave integrated circuit transistor circuit | |
| JPS6047200U (en) | sample hold circuit | |
| JPS6079754U (en) | Semiconductor integrated circuit device | |
| JPS62181027U (en) | ||
| JPS63120419U (en) | ||
| JPH0316358U (en) | ||
| JPS5999457U (en) | IC protection circuit | |
| JPS61197730U (en) | ||
| JPH0260317U (en) | ||
| JPS63158020U (en) | ||
| JPS6228452U (en) | ||
| JPH0159333U (en) |