JPS6047200U - sample hold circuit - Google Patents

sample hold circuit

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Publication number
JPS6047200U
JPS6047200U JP12224384U JP12224384U JPS6047200U JP S6047200 U JPS6047200 U JP S6047200U JP 12224384 U JP12224384 U JP 12224384U JP 12224384 U JP12224384 U JP 12224384U JP S6047200 U JPS6047200 U JP S6047200U
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
sampling field
sampling
hold circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12224384U
Other languages
Japanese (ja)
Inventor
正行 高橋
邦彦 後藤
久巳 田中
大畑 道信
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP12224384U priority Critical patent/JPS6047200U/en
Publication of JPS6047200U publication Critical patent/JPS6047200U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図a、 bおよび第2図は従来のサンプルホールド
回路の例を示す回路図、第3図および第4  。 図は本考案の実施例を示す回路図、第5図は該実施例に
おけるトランジスタめレイアウトを示す概略平面図であ
る。 図面で10は入力端子、12は出力端子、16は電界効
果トランジスタ、18はコンデンサ、22は1/2の大
きさの電界効果トランジスタ、24.26.28はソー
ス、ドレイン拡散領域、30はゲート電極、32.34
は同拡散領域、36 ゛はゲート電極である。。
FIGS. 1a, b and 2 are circuit diagrams showing examples of conventional sample-and-hold circuits, and FIGS. 3 and 4 are circuit diagrams showing examples of conventional sample-and-hold circuits. The figure is a circuit diagram showing an embodiment of the present invention, and FIG. 5 is a schematic plan view showing the layout of transistors in the embodiment. In the drawing, 10 is an input terminal, 12 is an output terminal, 16 is a field effect transistor, 18 is a capacitor, 22 is a field effect transistor of 1/2 size, 24, 26, 28 is a source, drain diffusion region, 30 is a gate electrode, 32.34
36 is the diffusion region, and 36 is the gate electrode. .

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 連続的に変化する入力電圧が印加される入力端一  子
と、ホールド電圧を出力する出力端子と、これらの人、
出力端子間に接続されたサンプリング用電界効果トラン
ジスタと、該出力端子と接地間に接続されそして該サン
プリング用電界効果トランジスタによりサンプリングさ
れた該入力電圧を保持するコンデンサとを備える妄ンプ
ルホールド回路において、該出力端子にソース、ドレイ
ンを接続され、ゲートには該サンプリング用電界効果ト
ランジスタのゲート電圧の反転信号を与えられかつ該サ
ンプリング用電界効果トランジスタのほぼ1ン2の大き
さの電界効果トランジスタを設け、且つ該サンプリング
用電界効果トランジスタが同じ間隔し、幅Wのチャネル
部を形成するように間隔をおいて連続して形成されたソ
ース、ドレイン拡散領域3つと、その2つのチャネル部
を覆うゲート電極とにより形成された2つの電界効果ト
ランジスタよりなり、該サンプリング用電界効果トラン
ジスタの1/2の大きさを持つ電界効果トランジスタが
該拡散領域2つとそれらの間のチャネル部を覆うゲート
′電極とにより形成された前記サンプリング用電界効果
トランジスタと同特性を有する1つの電界効果トランジ
スタよりなることを特徴とするサンプルホールド回路。
An input terminal to which a continuously changing input voltage is applied, an output terminal to which a hold voltage is output, and these people.
A random sample hold circuit comprising a sampling field effect transistor connected between output terminals, and a capacitor connected between the output terminal and ground and holding the input voltage sampled by the sampling field effect transistor, A field effect transistor is provided whose source and drain are connected to the output terminal, whose gate is supplied with an inverted signal of the gate voltage of the sampling field effect transistor, and whose size is approximately 1×2 of the sampling field effect transistor. , and the sampling field effect transistor has three source and drain diffusion regions successively formed at equal intervals so as to form a channel portion having a width W, and a gate electrode covering the two channel portions. A field effect transistor having a size 1/2 of the sampling field effect transistor is formed by the two diffusion regions and a gate electrode covering the channel portion between them. A sample hold circuit comprising one field effect transistor having the same characteristics as the formed sampling field effect transistor.
JP12224384U 1984-08-09 1984-08-09 sample hold circuit Pending JPS6047200U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12224384U JPS6047200U (en) 1984-08-09 1984-08-09 sample hold circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12224384U JPS6047200U (en) 1984-08-09 1984-08-09 sample hold circuit

Publications (1)

Publication Number Publication Date
JPS6047200U true JPS6047200U (en) 1985-04-03

Family

ID=30279494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12224384U Pending JPS6047200U (en) 1984-08-09 1984-08-09 sample hold circuit

Country Status (1)

Country Link
JP (1) JPS6047200U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075509A (en) * 1976-10-12 1978-02-21 National Semiconductor Corporation Cmos comparator circuit and method of manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075509A (en) * 1976-10-12 1978-02-21 National Semiconductor Corporation Cmos comparator circuit and method of manufacture

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